• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.83-88
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• 2002

To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.

• KIPE Magazine
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• v.25 no.2
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• pp.53-59
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• 2020

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.04a
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• pp.219-222
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• 1991

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.04a
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• pp.223-226
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• 1991

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1993.10a
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• pp.341-344
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• 1993

• KIPE Magazine
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• v.26 no.6
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• pp.28-31
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• 2021

• KIPE Magazine
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• v.26 no.6
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• pp.32-35
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• 2021

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.85-88
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• 1995

In this report the large-signal RF performance of GaN MESFETs at different operating temperatures is investigated using a harmonic balance modeling technique. The predicted device performance calculated by the large-si anal model of a GaN FET is shown to be in good agreement with experimen tar data. It is demonstrated that the optimal RF performance of a GaN MESFET amplifier is achieved by balancing the input impedence for a optimized de sign. A GaN MESFET with the optimized design is predicted to produce maximum RF output power of about 4W/mm and 1W/mm at room temperature and 773 K, respectively. The device produces a peak Power-Added Efficiency (PAE) of 52% and 32% at the two temperatures.

• ETRI Journal
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• v.39 no.2
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• pp.292-299
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• 2017

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.300-301
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• 2018

본 논문에서는 인덕션 쿠커의 스위칭 전력반도체에서 발생되는 스위치 손실을 비교 분석한다. Si-기반 전력반도체의 효율 상승이 한계점에 도달함에 따라 고속 스위칭 및 저손실 특성을 지닌 SiC, GaN와 같은 와이드밴드갭 소자를 활용한 고전력밀도 컨버터의 연구가 활발히 진행되고 있다. 이에 소비자 가전분야의 인덕션쿠커 공진형 하프-브릿지 전력회로의 기존 Si-IGBT를 GaN-FET과 SiC-FET으로 구성하여 스위치 손실모델을 유도하고 이를 통해 세 가지의 전력반도체가 적용된 인덕션 쿠커의 스위치 손실을 비교분석한다. 분석된 손실모델은 PSIM Thermal Module을 통하여 검증한다.