• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.22-27
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• 1992

The cyclic voltammogram characteristics at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics/(($10^{-3}$M KCI + p-Si powders) and /(($10^{-4}$M CsNO$_3$ + n-GaAs powders) suspension interfaces have been studied using the microelectrophoresis and the cyclic voltammetric method. The negatively charged ions are specifically absorbed on the virgin and the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics surfaces. The zeta potentials of the p-Si and n-GaAs colloidal semiconductors are + 41mV and -44.8mV, respectively. The magnetization effects act as potential barriers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The positivelely charged p-Si and the negatively charged n-GaAs colloidal semiconductors act as potential barriers at the virgin SrO${\cdot}6Fe_{2}O_{3}$ interfaces. On the other hand, the charged p-Si and n-GaAs colloidal semiconductors act as potential barrier scavengers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The magnetization effects and the charged colloidal semiconductor effects are irreversible and interdependent.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.348-352
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• 2005

Gallium oxyhydroxide (GaOOH) powders were heat-treated in a flowing ammonia gas to form GaN, and the reaction kinetics of the oxide to nitride was quantitatively determined by X-ray diffraction analysis. GaOOH turned into intermediate mixed phases of $\alpha-\;and\;\beta-Ga_2O_3$, and then single phase of GaN. The reaction time for full conversion $(t_c)$ decreased as the temperature increased. There were two-types of rapid reaction processes with the reaction temperature in the initial stage of nitridation at below $t_c$, and a relatively slow processes followed over $t_c$ does not depends on temperatures. The nitridation process was found to be limited by the rate of an interfacial reaction with the reaction order n value of 1 at $800^{\circ}C$ and by the diffusion-limited reaction with the n of 2 at above $1000^{\circ}C$, respectively, at below $t_c$. The activation energy for the reaction was calculated to be 1.84 eV in the temperature of below $830^{\circ}C$, and decreased to 0.38 eV above $830^{\circ}C$. From the comparative analysis of data, it strongly suggest the rate-controlling step changed from chemical reaction to mass transport above $830^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.97-98
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• 2002

$Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.59-63
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• 2012

Ga2O3-core/CdO-shell nanowires were synthesized by a two step process comprising thermal evaporation of GaN powders and sputter-deposition of CdO. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that the cores and the shells of the annealed coaxial nanowires were single crystal of monoclinic Ga2O3 and FCC CdO, respectively. As-synthesized Ga2O3 nanowires showed a broad emission band at approximately 460 nm in the blue region. The blue emission intensity of the Ga2O3 nanowires was slightly decreased by CdO coating, but it was significantly increased by subsequent thermal annealing in a reducing atmosphere. The major emission peak was also shifted from ~500 nm by annealing in a reducing atmosphere, which is attributed to the increases in the Cd interstitial and O vacancy concentrations in the cores.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.408-412
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• 2002

Ga$_2$O$_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.252-255
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• 2004

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

• Journal of Magnetics
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• v.13 no.3
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• pp.110-113
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• 2008

In this study, heavy rare earth garnet $Tb_2Bi_1Ga_1Fe_4O_{12}$ powders were fabricated by a sol-gel and vacuum annealing process. The crystal structure was found to be single-phase garnet with a space group of Ia3d. The lattice constant $a_0$ was determined to be 12.465 ${\AA}$. From the analysis of the vibrating sample magnetometer (VSM) hysteresis loop at room temperature, the saturation magnetization and coercivity of the sample are 7.64 emu/g and 229 Oe, respectively. The N$\acute{e}$el temperature($T_N$) was determined to be 525 K. The M$\ddot{o}$ssbauer spectrum of $Tb_2Bi_1Ga_1Fe_4O_{12}$ at room temperature consists of 2 sets of 6 Lorentzians, which is the pattern of single-phase garnet. From the results of the M$\ddot{o}$ssbauer spectrum at room temperature, the absorption area ratios of Fe ions on 24d and 16a sites are 74.7% and 25.3%(approximately 3:1), respectively. These results show that all of the non-magnetic Ga atoms occupy the 16a site by a vacuum annealing process. Absorption area ratios of Fe ions are dependent not only on a sintering condition but also on the temperature of the sample. It can then be interpreted that the Ga ion distribution is dependent on the temperature of the sample. The M$\ddot{o}$ssbauer measurement was carried out in order to investigate the atomic migration in $Tb_2Bi_1Ga_1Fe_4O_{12}$.