• Title/Summary/Keyword: GaN MMIC power amplifier

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Design and Implementation of High Efficiency Transceiver Module for Active Phased Arrays System of IMT-Advanced (IMT-Advanced 능동위상배열 시스템용 고효율 송수신 모듈 설계 및 구현)

  • Lee, Suk-Hui;Jang, Hong-Ju
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.26-36
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    • 2014
  • The needs of active phased arrays antenna system is getting more increased for IMT-Advanced system efficiency. The active phased array structure consists of lots of small transceivers and radiation elements to increase system efficiency. The minimized module of high efficiency transceiver is key for system implementation. The power amplifier of transmitter decides efficiency of base-station. In this paper, we design and implement minimized module of high efficiency transceiver for IMT-Advanced active phased array system. The temperature compensation circuit of transceiver reduces gain error and the analog pre-distorter of linearizer reduces implemented size. For minimal size and high efficiency, the implented power amplifier consist of GaN MMIC Doherty structure. The size of implemented module is $40mm{\times}90mm{\times}50mm$ and output power is 47.65 dBm at LTE band 7. The efficiency of power amplifier is 40.7% efficiency and ACLR compensation of linearizer is above 12dB at operating power level, 37dBm. The noise figure of transceiver is under 1.28 dB and amplitude error and phase error on 6 bit control is 0.38 dB and 2.77 degree respectively.

A Study on Fabrication and Performance Evaluation of Wideband Receiver using Bias Stabilized Resistor for the Satellite Mobile Communications System (바이어스 안정화 저항을 이용한 이동위성 통신용 광대역 수신단 구현 및 성능 평가에 관한 연구)

  • 전중성;김동일;배정철
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.3
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    • pp.569-577
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    • 1999
  • A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

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