• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.3
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• pp.421-432
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• 2020

This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.22-29
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• 2009

In this paper, we developed the 200-Watts SSPA(Solid State Power Amplifier) for the X-band pulse compression solid state radar. The developed X-band SSPA is consists of 3-stage CSA(Corporate Structured Amplifier) modules in pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main-power amplifier stage of SSPA designed by balanced type using GaN HEMT with enough power and gain to generate power more than 200-Watts in X-band. The developed SSPA has performance with more than total gain 59dB and output power 200-Watts in condition of frequency range 9.2-9.6GHz, pulse period 1msec, pulse width 100usec and duty cycle 10%. The developed SSPA in this paper can apply to high quality solid state radar system with pulse compression technique.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.1-7
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• 2012

In this paper, An X-band solid state power amplifier(SSPA) for pulse compressed microwave signal with 60Watt power and power added efficiency(PAE) above 30% is described. Designed 60Watt high power amplifier(HPA) was implemented by cascade coupled amplifiers, and it is consisted on three stage drive amplifiers with internally matched GaAs FET and one stage main power amplifier with an internally matched GaN HEMT. The designed SSPA has performance with more than total power gain 37dB and output power 48dBm(60-W) in condition of frequency range $9.41{\pm}0.03GHz$, pulse period width under 1ms and duty cycle under 10%. The implemented SSPA can apply to high quality digital marine radar applications with pulse compression technique.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.807-813
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• 2008

The gate-biases of the Doherty power amplifier are controlled to improve the linearity performance. The linearity improvement mechanism of the Doherty amplifier is the harmonic cancellation of the carrier and peaking amplifier at the output power combining point. However, it is difficult to cancel the harmonic power for the broader power range because the condition for cancelling is varied by power. For the linearity improvement, we have explored the linearity characteristic of the Doherty amplifier according to the input power and gate biases of the carrier and peaking amplifier. To extend the region of harmonic power cancellation, we have injected the proper gate bias to the carrier and peaking amplifier according to the input power levels. To validate the linearity improvement, the Doherty amplifier is designed using Eudyna 10-W PEP GaN HEMT EGN010MKs at 2.345 GHz and optimized to achieve a high linearity and efficiency at an average output power of 33 dBm, backed off about 10 dB from the $P_{1dB}$. In the experiments, the envelope tracking Doherty amplifier delivers a significantly improved adjacent channel leakage ratio performance of -37.4 dBc, which is an enhancement of about 2.8 dB, maintaining the high PAE of about 26 % for the WCDMA 1-FA signal at an average output power of 33 dBm. For the 802.16-2004 signal, the amplifier is also improved by about 2 dB, -35 dB.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.