• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.127-127
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• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.94-94
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• 1999

반도체 Hall 효과를 이용하여 자계를 검출하여 이를 전압신호로 출력하는 자기센서로는 주로 GaAs, InSb, InAs 등의 박막이 사용되고 있다. 자기센서의 응용분야가 최근에는 직류전류의 무접촉 검출, 자동차의 무접촉 회전 검출, 산업용 기계의 제어용 무접촉 위치검출 분야로 확대되고 있어 그 수요가 급증하고 있다. 이중 Hall 소자의 응용분야중 많은 활용이 기대되고 있는 자동차용 무접촉 센서는 -4$0^{\circ}C$~15$0^{\circ}C$의 온도범위에서 안정하게 작동하여야 하므로 온도 안정성이 매우 중요하다. 그러나 Hall 소자 시장의 80%를 점유하고 있는 InSb Hall 소자는 온도가 올라감에 따라 저항이 급격히 낮아지는 성질을 가지고 있으므로 10$0^{\circ}C$ 이상의 온도에서 사용하는 것이 불가능하다. 한편 InAs(에너지갭~0.18eV)는 InSb보다 에너지 갭이 크므로 고온에서도 작동이 가능하고 자계변화에 따른 출력의 직진성이 매우 좋다는 장점을 가지고 있다. 이러한 InAs Hall 소자를 실현하기 위해서 가장 중요한 것이 고품위의 InAs의 박막 성장기술이다. InAs 박막을 성장하기 위해서 사용되고 있는 기판은 GaAs이다. 그러나 GaAs 기판과 InAs 박막 사이에는 약 7% 정도의 격자부정합이 존재하기 때문에 높은 이동도를 가지는 고품위 박막을 성장시키기가 매우 어렵다. 이에 본 연구에서는 분자선에피택시 방법을 이용하여 GaAs 기판위에 고품위의 InAs 박막을 성장하는 기술을 연구하였으며, 성장된 InAs 박막의 특성을 DCX 및 Hall effect 등으로 조사하였다. InAs 박막 성장시 기판은 <0-1-1> 방향으로 2$^{\circ}$ off 된 GaAs(100)를 사용하였다. InAs 박막성장시 기판온도는 48$0^{\circ}C$로 하고 GaAs buffer 두께는 2000$\AA$로 하여 As flux 및 Si doping 농도등을 변화시켰다. 그 결과 Si doping 농도 2.21$\times$1017/am에서 10,952cm2/V.s의 이동도를 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.168-168
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• 2010

InAs는 0.35eV의 낮은 밴드갭을 가지며 상온에서 약 $30,000cm^2/Vs$의 높은 전자이동도를 보여, GaAs/AlGaAs 및 InGaAs/InP 2DEG HEMT에 이은 차세대 초고속 전자소자의 2DEG용 물질로 각광을 받고 있다. 그러나 InAs의 격자상수는 약 0.61nm로 이에 적절한 반절연기판을 구할수 없어, GaAs상에 Al(Ga)Sb를 이용하여 성장하는 방법으로 2DEG을 실현하고 있다. 상기 방법으로 상온에서 ${\sim}30,000cm^2/Vs$ 전자이동도를 보이는 InAs/AlSb 2DEG HEMT 소자를 여러 연구팀에서 시현하였으나, 실제적으로 응용하기 위해서 etch-stop층 또는 contact층의 제작이 용이치 않아 실제의 회로구현에는 어려움을 격고 있다. 이에 InGaAs/InP 2DEG내에 InAs를 넣어 InAs 2DEG을 제작하는 방법이 NTT[1]에 의해 제안되어, SPINTRONICS등의 InAs 2DEG이 필요한 곳에 응용되고 있다. [2] 본 발표에서는 고품질의 InAs 2DEG을 실현하기 위해, 다양한 성장 변수 (온도, As 분압, 성장 시퀀스, InAs층의 두께등)와 2DEG의 전기적특성간의 관계를 발표한다. 최종적으로 상온전자이동도 ${\sim}12,000cm^2/Vs$의 InAs 2DEG을 제작할수 있었으며, 이를 다양한 전자소자에 차후 응용할 예정이다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.154.2-154.2
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• 2008

• 센서학회지
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• 제31권4호
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• 한국진공학회지
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• 제18권2호
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• pp.108-115
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• 2009

150 주기의 InAs/GaSb (8/8-ML) 제2형 응력초격자 (SLS)를 활성층에 탑재한 초격자 적외선검출소자 (SLIP) 구조를 MBE 방법으로 성장하고, 직경 $200{\mu}m$의 개구면을 가지는 SLIP 개별소자를 시험 제작하였다 고분해능 투과전자현미경 (TEM) 이미지의 휘도분포와 X선회절 (XRD) 곡선의 위성피크의 분석 결과는 SLS 활성층은 균일한 층두께와 주기적 응력변형을 유지하는 급격한 계면의 초격자임을 입증하였다. 흑체복사 적외선 광원을 이용하여 측정한 입사파장 및 인가전압에 따른 반응도 (R)와 검출률 ($D^*$)로부터, 차단파장은 ${\sim}5{\mu}m$이고 최대 R과 $D^*$ ($\lambda=3.25{\mu}m$)는 각각 ${\sim}10^3mA/W$ (-0.6 V/13 K)와 ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K)임을 보였다. 반응도의 온도의존성으로부터 분석한 활성화에너지 275 meV는 광반응 과정에 개입되어 있는 가전대 및 전도대 부준위 사이의 에너지 간격 (HH1-C)과 잘 일치하였다.

• 한국임상약학회지
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• 제8권2호
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• pp.122-132
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• 1998

SB-31 which contains Pursatilla, Licoris and Ginseng extracts was recently proved as an anticancer agent. In a preclinical effort to be applied this drug to human, pharmacokinetics of SB-31 was carried out in rats and rabbits. Glycyrrhizin(GZ), a saponin of Licoris was used as a standard ingradient for the pharmacokinetics of SB-31. The rat's blood, bile and urine samples were serially collected in femoral vein, common bile duct and bladder, respectively, after bolus i.v. injection at a dose of 1 or 1/5 ampul/rat and rabbit's blood samples from the marginal ear vein at a dose of 1 or 3 amp./rabbit. GZ and glycyrrhetic acid(GA), a major metabolite of GZ in the physiological samples were analysed by HPLC with UV detection. The decline of GZ in plasma concentration was generally biexponential at each dose. GZ was almost completely recovered in bile within 18 hour. GA wasn't detected in the samples with UV detector. In the rat, Vss and Kel at a dose of 1 and 1/5 ampul of SB-31 were $98.06\pm6.07\;ml,\;0.33\pm0.05\;hr^{-1}\;and\;65.46\pm11.19\;ml,\;0.68\pm0.25\;hr^{-1}$, respectively. Those in rabbits at a dose of 3 and 1 ampul of SB-31 were $235.24\pm30.72\;ml,\;0.13\pm0.36\;hr^{-1}\;and\;341.32\pm28.58\;ml,\;0.27\pm0.04\;hr^{-1}$, respectively. 'WinNonlin' was utilized for the compartmental analysis. A two-compartment model was chosen as the most appropriate pbarmaco-kinetic model. The data were best described by using a weighting factor of $1/y^2$. To evaluate the effect of SB-31 on cardiovascular system, serially diluted SB-31 was directly injected into coronary artery in the isolated perfused rat heart and the effect of PSF, PSH, saponins of Pursatilla, and SB-31 on PT, APTT of healthy human plasma was examined. Except the positive inotropic effect of ten times diluted solution of SB-31, there was no significant effect on LVDP, (- dp/dt)/(+dp/dt), heart rate and coronary flow in comparision with that of vehicle. SB-31 had no effect on PT but slightly delayed APTT about $6.9{\sim}11.5\%$. There was no significant effect of PSF and PSH on PT & APTT. Conclusively, SB-31 did not show any notable toxic effects on cardiovascular system.