• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.429-429
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• 2012

본 연구에서는 분자선 박막 성장법(MBE)으로 성장된 GaAs single junction solar cell의 광학적 특성 변화를 photoreflectance (PR)을 이용하여 연구하였다. 본 연구에 사용된 태양전지 구조는 n+-GaAs (100)기판 위에 n+-GaAs buffer를 200 nm 성장 후 그 위에 i-GaAs 250 nm와 p+-GaAs 200 nm 성장 하였다. 상온에서 PR 측정 결과, 변조빔 세기가 증가할수록 Franz-Keldysh oscillation (FKO)의 주파수가 증가하는 현상이 관측되었다. 이는 변조빔의 세기가 강해질수록 광케리어수의 증가로 인한 스크리닝 효과에 기인한 것으로 사료된다. 아울러 Fast Fourier transform (FFT) 결과, 변조빔의 세기가 약할 때는 세 개의 주된 피크가 나타났으며, 이러한 현상은 GaAs에서 가전자대의 heavy hole (HH)과 light hole (LH)의 전이로 인해 나타나는 FKO 신호가 중첩되어 HH과 LH 피크가 HH과 HH-,LH과 LH-로 나뉘어진 것으로 사료된다. 여기광의 세기가 $1.40mW/cm^2$ 이상일 때는 주된 세 개 피크 이외에 부가적인 피크가 상대적으로 고 주파수 영역에서 관측되었다. 이러한 고주파수 영역에서의 나타나는 FKO 주파수는 시료의 내부전기장이 여기광의 세기가 증가할수록 감소하는 결과로 사료된다.

• Korean Journal of Optics and Photonics
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• v.32 no.2
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• pp.55-61
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• 2021

The lateral-mode characteristics of 850-nm GaAs/(Al,Ga)As multiple-quantum-well laser diodes and their influence on the kinks in output optical power are investigated. For the investigation, self-consistent electro-thermal-optical simulation and measurement of fabricated devices are used. From this investigation, the optimal P-cladding thickness that provides single-lateral-mode operation is determined, so that high beam quality can be achieved even at high output powers.

• Biomolecules & Therapeutics
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• v.30 no.2
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• pp.151-161
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• 2022

This study elucidates the anti-cancer potential of gallic acid (GA) as a promising therapeutic agent that exerts its effect by regulating the PI3K/Akt pathway. To prove our research rationale, we used diverse experimental methods such as cell viability assay, colony formation assay, tumor spheroid formation assay, cell cycle analysis, TUNEL assay, Western blot analysis, xenograft mouse model and histological analysis. Treatment with GA inhibited cell proliferation in dose-dependent manner as measured by cell viability assay at 48 h. GA and cisplatin (CDDP) also inhibited colony formation and tumor spheroid formation. In addition, GA and CDDP induced apoptosis, as determined by the distribution of early and late apoptotic cells and DNA fragmentation. Western blot analysis revealed that inhibition of the PI3K/Akt pathway induced upregulation of p53 (tumor suppressor protein), which in turn regulated cell cycle related proteins such as p21, p27, Cyclin D1 and E1, and intrinsic apoptotic proteins such as Bax, Bcl-2 and cleaved caspase-3. The anti-cancer effect of GA was further confirmed in an in vivo mouse model. Intraperitoneal injection with GA for 4 weeks in an A549-derived tumor xenograft model reduced the size of tumor mass. Injection of them downregulated the expression of proliferating cell nuclear antigen and p-Akt, but upregulated the expression of cleaved caspase-3 in tumor tissues. Taken together, these results indicated that GA hindered lung cancer progression by inducing cell cycle arrest and apoptosis, suggesting that GA would be a potential therapeutic agent against non-small cell lung cancer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.21-22
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.18-18
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.97-97
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• 1993

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.31-31
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• 1996

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.72-75
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• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.