• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.663-669
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• 1994

Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.58-61
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• 2002

Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.451-451
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• 2013

현재 세계적으로 에너지 공급원의 다변화가 시급한 실정이며 그 후보로 태양에너지, 풍력 및 수력에너지와 같은 신재생 에너지에 대한 연구분야가 부각되고 있다. 전체 에너지 중 신재생 에너지의 비중은 빠르게 증가되고 있으며, 그 중에서도 태양광에너지의 분야가 가장 활발히 연구되고 있다. 특히, III-V족 화합물 반도체 태양전지는 직접 천이형 밴드갭을 가지고 있어 기존 실리콘 태양전지에 비해 광 흡수율이 높은 장점을 가지고 있다. 따라서 본 연구에서는 Molecular Beam Epitaxy (MBE)장치를 이용하여 성장온도에 따른 p-n접합 GaAs 태양전지 구조를 제작하여, 광전변환 효율과 결함구조 관련성을 조사하였다. 먼저 Si이 $1{\times}10^{18}cm^{-3}$으로 도핑된 n형 GaAs기판위에 성장온도 $480^{\circ}C$와 $590^{\circ}C$에서 Be을 $5{\times}10^{18}cm^{-3}$ 도핑한 p 형 GaAs를 200 nm 두께로 각각 성장하여, 2개의 p-n 접합 GaAs 태양전지 구조를 제작하였다. 시료의 전기적 특성과 결함상태는 Capacitance-Voltage (C-V) 와 Deep Level Transient Spectroscopy (DLTS)를 사용하여 조사하였다. DLTS 측정을 위해 p-형의 GaAs박막 위에 Au(300 nm)/Pt(30 nm)/Ti(30 nm)를 e-beam evaporator로 증착한 후, 직경 $300{\mu}m$의 메사 에칭으로 p-n접합 다이오드 구조를 제작하였다. 본 연구를 통해 GaAs p-n접합구조 성장온도에 따른 광전변환 효율과 결함상태와의 물리적인 연관성을 논의할 것이다.

• Journal of Astronomy and Space Sciences
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• v.36 no.2
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• pp.69-74
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• 2019

Spacecraft requires sufficient power in orbit to perform its mission. So as to comply with system requirements, the sufficient power should be made by a solar cell array by photovoltaic power conversion. A life time of space program depends on its mission considering parts reliability and parts grade. Based on the mission life time, power equipment might be designed to meet specifications. In outer space, solar cell array might generate the dc power by photovoltaic conversion effects and GaInP/GaAs/Ge solar cells are used in this study. Space programs that require more than five years should select parts for high reliability applications. Therefore, reliability analysis for high reliability applications should be performed to check its fulfilment of the requirements. This program should also require more five years for its mission and we performed its analysis using parts count method (PCM) for its reliability. Finally, we performed reliability analysis and obtained quantitative figures found out 99.9%. In this study, we presented the reliability analysis of the 300 W GaInP/GaAs/Ge solar cell array.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.158-158
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• 2009

• Journal of the Korean Institute of Navigation
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• v.14 no.2
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• pp.77-82
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• 1990

In this paper the results for thin multi-layer InGaAsP($1.3{\mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{\circ}C$/min and the growing temperature of $630^{\circ}C$ were obtained as $0.11 {\mu}m$/min and $0.06 {\mu}m$/min, respectively, by the uniform cooling with two phase solution technique.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.444-449
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• 2008

Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.