• Title/Summary/Keyword: GaAs태양전지

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Heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs Solar Cell Grown by MOCVD (MOCVD를 이용한 Heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs 태양전지의 개발)

  • 창기근;임성규
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.1
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    • pp.30-39
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    • 1991
  • The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

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Development of Multi-flat Reflector Sun Tracking System for Sun Photocell Maximum Power Generation (태양전지 최대전력 발생을 위한 다 평면 반사경 태양추적시스템 개발)

  • Lee, Kang-Sin;Lee, Hyun-Seog;Yoo, Seok-Ju;Park, Wal-Seo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.67-72
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    • 2011
  • Recently, photovoltaic generator system is widely extended by energy policy of the government. Add to this, for high efficiency of power generation per natural light unit area is needed to sun tracking system. And it is needed to condensed light generator for reducer of equipment expense. As method of solving this problem, this paper is developed multi-flat reflector sun tracking system for sun photocell maximum power generation. The system is consisted of multi-flat reflector and two axes machinery and sun location perceiver and AVR controller. GaAs 3J cell generated 6.75 times power more than silicon cell by times condensing light system. As a result, condensing light system of multi-flat reflector generated maximum power and showed reducing costs to photovoltaic generator.

Power-Dependent Characteristics of $n^+$-p and $p^+$-n GaAs Solar Cells

  • Kim, Seong-Jun;Kim, Yeong-Ho;No, Sam-Gyu;Kim, Jun-O;Lee, Sang-Jun;Kim, Jong-Su;Lee, Gyu-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.236-236
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    • 2010
  • 단일접합 $n^+-p/p^+$ (p-emitter) 및 $p^+-n/n^+$ (n-emitter) GaAs 태양전지 (Solar Cell)를 각각 제작하여, 그 소자특성을 비교 분석하였다. AM 1.5 (1 sun, $100\;mW/cm^2$) 표준광을 조사할 경우, p-emitter/n-emitter 소자의 개방회로전압 (Voc), 단락회로전류 (Jsc), 충전율 (FF), 효율 (Eff)은 각각 0.910/0.917 V, $15.9/16.1\;mA/cm^2$, 78.7/78.9, 11.4/12.1%로서, n-emitter 소자가 다소 크지만 거의 비슷한 값을 가지고 있었다. 태양전지의 집광 특성을 분석하기 위하여 조사광의 출력에 따른 태양전지의 소자 특성을 측정하였다. 조사광 강도가 높아짐에 따라 p-emitter 소자의 특성은 점진적으로 증가하는 반면, n-emitter는 1.3 sun에서 약 1.4 배의 최대 효율 (17%)을 나타내고 조사광이 더 증가함에 따라 급격히 감소하는 특성을 보여 주었다. (그림 참고) 본 연구에서 사용한 2종류 소자의 층구조는 서로 반대되는 대칭구조로서, 모두 가까이에 위치하고 있는 표면전극 (surface finger) 방향으로 소수전하 (minority carrier)가 이동하고 다수전하 (majority carrier)는 기판 (두께 $350\;{\mu}m$)을 통한 먼 거리의 후면전극 (back electrode)으로 표류 (drift)되도록 설계되어 있다. 이때, n-emitter에서는 이동도 (mobility)와 확산길이 (diffusion length)가 높은 전자가 후면전극으로 이동하기 때문에 적정밀도의 전자-정공 쌍 (EHP)이 여기될 경우에는 Jsc와 Eff가 극대화되지만, 조사광 강도 또는 EHP가 더 높아질 경우에는 직렬저항의 증가와 함께 전류-전압 (I-V)의 이상인자 (ideality factor)가 커짐으로서 FF와 효율이 급격히 감소한 결과로 분석된다. 현재 전산모사를 통한 자세한 분석을 진행하고 있으며, 본 결과는 효율 극대화를 위한 최적 층구조 및 도핑 밀도 설계에 활용할 수 있을 것으로 판단된다.

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Effects of Passivation Thin Films by Spray Coatings on Properties of Flexible CIGS Solar Cells (스프레이코팅법에 의한 패시베이션 박막이 플렉시블 CIGS 태양전지의 특성에 미치는 영향)

  • Lee, Sang Hee;Park, Byung Min;Kim, Ki Hong;Chang, Young Chul;Pyee, Jaeho;Chang, Ho Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.3
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    • pp.57-61
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    • 2016
  • In order to protect the solar cells from the moisture and oxygen, we evaluated the electrical and optical properties for the $Cu(In,Ga)Se_2$ (CIGS) solar cells which were prepared by the spray coating method. Generally, the EVA (ethylene-vinyl acetate) films are laminated to protect the CIGS flexible solar cells, which results in a high cost process due to complicated devices. In this study, we tried to prepare the protection layers of the flexible CIGS flexible solar cells by using spray coating method instead of conventional laminating films in order to reduce the device weight as well as the process time. The CIGS solar cells with spray coating method showed an enhanced efficiency than the before treated sample (2.77% to 2.93%) and relatively proper water vapor transmission rate of the solar cells about 62.891 gm/[$m^2-day$].

Development and Validation of HAUSAT-2 Nanosatellite EPS (HAUSAT-2 위성의 전력계 개발 및 검증)

  • Kim, Dong-Un;Jang, Yeong-Geun;Mun, Byeong-Yeong
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.34 no.4
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    • pp.89-101
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    • 2006
  • This paper addresses Electrical Power Subsystem(EPS) design and verification of HAUSAT-2 small satellite through energy balance analysis(EBA) depending on individual operation modes. GaAs solar cells are used for satellite power generation and digital peak power tracking is implemented for EPS architecture. One battery pack is consisted of 4 Li-Ion cells. Battery charge is accomplished by peak power tracker and battery charge regulator. Power conditioning assembly uses three DC-DC converters, and power distribution assembly which consists of commercial IC and MOSFET switch distributes power to subsystems and payloads. The altitude of 650km and sun-synchronous LEO with various local time ascending node(LTAN) are considered in EBA.

A study on the electrical characteristics of CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 전기적 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.7
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    • pp.1647-1652
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    • 2010
  • A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

Effects of substrate temperature on the performance of $Cu_2ZnSnSe_4$ thin film solar cells fabricated by co-evaporation technique (동시진공 증발법을 이용한 $Cu_2ZnSnSe_4$ 박막 태양전지의 제조와 기판온도가 광전압 특성에 미치는 영향)

  • Jung, Sung-Hun;Ahn, Se-Jin;Yun, Jae-Ho;Gwak, Ji-Hye;Kim, Dong-Hwan;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.85-87
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    • 2009
  • Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

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Single layer 반사방지막 구조 태양전지에서의 표면반사율 simulation 결과 해석

  • Ra, Chang-Ho;Yang, Cheong;Yu, Won-Jong;Kim, Dong-Ho;Kim, Taek
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.69-70
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    • 2008
  • 태양전지에서 효율성은 높이고 가격은 낮추기 위한 연구가 활발히 진행이 되고 있다. 본 연구에서는 효율성 중에서도 single layer에서의 반사율에 초점을 맞추었다. 본 연구에서는 single layer 박막에서의 반사율에 대한 시뮬레이션을 수행했다. 적절한 refractive index를 갖는 박막을 사용했을 때, 반사율 감소를 simulation과 실험을 통해서 알 수가 있었으며, MgF2 박막물질을 사용했을 경우, 물질의 refractive index가 낮을수록 반사율이 낮아짐을 알 수 있었다. 시뮬레이션 결과와 실제 실험 결과를 비교했을 때, 실제 실험 결과의 반사율이 약 3%가량 큰 것으로 나타났다. 이는 반사방지막의 증착 불균일성에 기인하는 문제로 생각된다. 또한, refractive index의 차이에 의해 substrate에 따른 최적화 반사율을 얻는 조건이 달라짐을 실험을 통해 확인할 수 있었다. Glass의 경우는 MgF2가 silicon과 GaAs의 경우에는 ZrO2 나 HfO2가 낮은 반사율을 보였다.

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The Effect of Thermal Annealing and Growth of $CuGaSe_2$ Single Crystal Thin Film for Solar Cell Application (태양전지용 $CuGaSe_2$ 단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Journal of the Korean Solar Energy Society
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    • v.23 no.2
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    • pp.59-70
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    • 2003
  • A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

Output Power Characteristics of CPV Solar Cell due to Non-uniform Illumination (고집광 태양전지의 비균등 조사에 의한 출력특성)

  • Shin, Goo-Hwan;Ryu, Kwang-Sun;Cha, Won-Ho;Myung, Noh-Hoon;Kim, Young-Sik;Kang, Gi-Hwaw
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.269-274
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    • 2011
  • A solar cell is primary parts to produce electrical energy from the Sun. And, we can utilize those solar cells as a power generation system in home, factory, and so on. In order to make proper power, the solar cells are configured in series and parallel lay down. In condition of uniform illumination, the solar array will produce an enough power by photovoltaic effects from the solar cells. In case of non-uniform illumination on the solar cells, the power will be dramatically decreased compared to design. Fortunately, there were so many research outputs regarding the illumination effects on solar array. In this work, we tried to find out the non-uniform effects on unit CPV solar cell, because there were no research outputs for unit CPV solar cell considering illumination. The CPV solar cell was used in CPV system to make a power by the Sun. We chosen the triple junction solar cell of GaAsInP2Ge for simulation, which has a 30 % of conversion efficiency. By simulation, we obtained the output performance of CPV solar cells in condition of various illumination by using Hamming Window function. Its performance was degraded by 10 % to 50 % depending illumination conditions.

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