• Title/Summary/Keyword: GaAs태양전지

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Triple Junction GAGET2-ID2 Solar Cell Degradation by Solar Proton Events (태양 양성자 이벤트에 의한 삼중 접합 GAGET2-ID2 태양전지 열화)

  • Koo, Ja-Chun;Park, Jung-Eon;Moon, Gun-Woo
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.49 no.12
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    • pp.1019-1025
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    • 2021
  • In nearly all space environments, the solar cell degradation is dominated by protons[1]. Even through a GEO orbit lines in the electron radiation belts, the protons emitted from any solar event will still dominate the degradation[1]. Since COMS launch on June 26 2010, the proton events with the fluence of more than approximately 30 times the average level of perennial observations were observed between January 23 - 29 2012 and March 07 - 14 2012[16]. This paper studies the solar cell degradation by solar proton events in January and March 2012 for the open circuit voltage(Voc) of a witness cell and the short circuit current(Isc) of a section connected to a shunt switch. To evaluate the performance of solar cell, the flight data of voltage and current are corrected to the temperature, the Earth-Sun distance and the Sun angle and then compare with the solar cell characteristics at BOL. The Voc voltage dropped about 23.6mV compare after the March 2012 proton events to before the January 2012 proton events. The Voc voltage dropped less than 1% at BOL, which is 2575mV. The Isc current decreased negligible, as expected, in the March 2012 proton events.

Ga-ZnO film using electrochemical method (전기화학적 방법을 이용한 Ga-ZnO film)

  • Sim, Won-Hyeon;Kim, Yeong-Tae;Park, Mi-Yeong;Im, Dong-Chan;Lee, Gyu-Hwan;Jeong, Yong-Su
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.10a
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    • pp.151-151
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    • 2009
  • ZnO 박막은 큰 밴드 갭 및 가시광 영역에서 높은 광투과성을 가지며, 제조조건에 따라 비저항의 범위가 폭넓게 변화하므로 태양전지, 평판 디스플레이의 투명 전극뿐만 아니라 음향공전기, 바리스터 등에 이용되고 있다. ZnO 박막의 전도성을 향상시키기 위해서 일반적으로 Al, Ga, Ti, In, B, H(n-type), 등과 N, As(p-type)의 도펀트를 사용한다. 본 연구에서는 전기화학적인 방법을 사용하여 ITO/glass위에 ZnO film에 농도에 따른 Ga을 doping 하여 전기전도성 향상과 밴드갭을 넓힘으로서 전자의 recombination을 방지하여 유기태양전지의 효율을 높이는데 목적을 두었다.

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The Effect of Metal Back-reflective Layers on the Performance of Transfer Printed GaAs Solar Cells (금속 후면 반사막이 GaAs 태양전지의 효율에 미치는 영향)

  • Choi, Wonjung;Kim, Chang Zoo;Kang, Ho Kwan;Jo, Sungjin
    • Current Photovoltaic Research
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    • v.2 no.2
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    • pp.73-77
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    • 2014
  • To investigate the effect of metal back-reflective layers (MBLs) on the performance of GaAs solar cells, we fabricated GaAs solar cells on Al and Ag metal layers using the transfer printing technique. We also investigated the effect of MBL texturing on the performance of transfer printed GaAs solar cells. Transfer printed solar cells with MBLs exhibited improved photovoltaic performance compared to solar cells without MBLs due to light trapping. We demonstrated GaAs solar cells with MBLs on a flexible substrate and performed systematic bending tests. All the measured characteristics of solar cells showed little change in performance.

Growth of $CuGaSe_2$ single crystal thin film for solar cell development and its solar cell application (태양 전지용 $CuGaSe_2$ 단결정 박막 성장과 태양전지로의 응용)

  • Yun, Suk-Jin;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.6
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    • pp.252-259
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    • 2005
  • Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

COMS Electrical Power Subsystem Preliminary Design (통신해양기상위성 전력계 예비설계)

  • Gu, Ja-Chun;Kim, Ui-Chan
    • Journal of Satellite, Information and Communications
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    • v.1 no.2
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    • pp.95-100
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    • 2006
  • The COMS(Communication, Ocean and Meteorological Satellite) EPS(Electrical Power Subsystem) is derived from an enhanced Eurostar 3000 version. Eurostar 3000 EpS is fully autonomous operation in nominal conditions or in the event of a failure and provides a high level of reconfigure capability. This paper introduces the COMS EPS preliminary design result. COMS EPS consists of a battery, a solar arrat wing, a PSR(Power Supply Regulator), a PRU(Pyrotechnic Unit), a SDAM(Solar Array Drive Mechanism) and relay and fuse brackets. COMS EPS can offer a bus power capability of 3 kW. The solar array is made of a deployable wing with two panels. One type fo solar cells is selected ad GaAs/Ge triple junction cells. Li-ion battery is base lined with ten series cell module of five cells in parallel. PSR associated to battery and solar array wing generates a power bus fully regulated at 50 V. Power bus os centralized protection and distribution by relay and fuse brackets. PRU provides power for firing actuarors devices. The solar array wing is rotated by the SADM under control of the attitude orbit control subsystem. The control and monitoring of the EPS, especially of the battery, is performed by the PSR in combination with the on-board software.

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A Study on Fabrication and Properties the GaAs/Si Solar Cell using MOCVD (MOCVD를 이용한 GaAs/Si태양전지의 제작과 특성에 관한 연구)

  • 신일철;임중열;차인수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.1-7
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    • 1997
  • The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

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Effect of Moisture on Cu(In,Ga)Se2 Solar Cell with (Ga,Al) Co-doped ZnO as Window Layer ((Ga,Al)이 도핑된 ZnO를 투명전극으로 가진 Cu(In,Ga)Se2 태양전지에 수분이 미치는 영향)

  • Yang, So Hyun;Bae, Jin A;Song, Yu Jin;Jeon, Chan Wook
    • Current Photovoltaic Research
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    • v.5 no.4
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    • pp.135-139
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    • 2017
  • We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.