• Korean Journal of Materials Research
• /
• v.21 no.4
• /
• pp.202-206
• /
• 2011

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

• The Journal of the Convergence on Culture Technology
• /
• v.9 no.5
• /
• pp.523-528
• /
• 2023

The applicability as a material to improve solar cell performance was reviewed by synthesizing a phosphor that emits red wavelengths by a liquid synthesis method using a metal salt aqueous solution and a polymer medium as a starting material. An aqueous solution was prepared using nitrate of metals such as Ca, Zn, Al, and Eu, and a precursor impregnated with starch, a natural polymer, was sintered to synthesize CaZnAlO:Eu phosphor powder. The surface structure and composition analysis of the synthesized CaZnAlO:Eu phosphor powder were analyzed by scanning electron microscope(SEM) and energy-dispersed X-ray spectroscopy(EDS). The crystal structure of CaZnAlO:Eu phosphor particles was analyzed by an X-ray diffraction analyzer (XRD). As a result of measuring the photoluminescence(PL) characteristics of the phosphor, it was confirmed that a red phosphor with a light emitting wavelength of 650-780nm was successfully synthesized. According to SEM and EDS analysis, the synthesized Ca₁₄Zn₆Al_9.93O₃₅:Eu³⁺_0.07 phosphor powder has a uniform particle size, and Eu ions used as an activator are present. The synthesized CZA:Eu³⁺ phosphor can be used as a material that can increase the light absorption efficiency of the solar cell by converting ultraviolet or visible light down conversion into a wavelength in the near-infrared region.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.106.1-106.1
• /
• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• Journal of the Korean Solar Energy Society
• /
• v.31 no.2
• /
• pp.82-88
• /
• 2011

The artificial increase in the solar intensity incident on solar cells using lenses or mirrors can allow solar cells to generate equivalent power with a lower cost. There are two types of concentration optics for solar energy conversion. One is to use mirrors, and the other is to use Fresnel lenses. The gains that can be achieved with a Fresnel lens or a parabolic mirror are compared. The result showed the gains are comparable and the two configurations were developed competitively. In application areas of Fresnel lenses as solar concentrators, several variations of design were devised and tested. Some PV systems still use commercially available flat Fresnel lenses as concentrators. A convex linear Fresnel lens to improve the concentration ratio and the efficiency is devised and flat linear Fresnel lens in thermal energy collection is utilized. In this study, we designed and optimized flat Fresnel lens and the 'light pipe' to develop 500X concentrated solar PV system. In the process, we compare the transmission efficiencies according to groove types. We performed rigorous ray tracing simulation of the flat Fresnel lenses. The computer aided simulation showed the 'grooves in case' has the better efficiency than that of 'grooves out case'. Based on the ray-trace results we designed and manufactured sample Fresnel lenses. The optical performance were measured and compared with ray-trace results. Finally, the optical efficiency was measured to be above 75%. All the design and manufacturing were performed based on that InGaP/InGaAs/Ge triple junction solar cell is used to convert the photon energy to electrical power. Field test will be made and analyzed in the near future.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1729-1731
• /
• 1999

The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor region due to diffusion of Na from soda-lime glass but was mainly determined by the surface resitivity controlled by excess Na.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.250-250
• /
• 2010

We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.

• Applied Chemistry for Engineering
• /
• v.25 no.6
• /
• pp.577-580
• /
• 2014

Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.138-138
• /
• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Current Photovoltaic Research
• /
• v.2 no.4
• /
• pp.168-172
• /
• 2014

Under concentrated illuminations, the solar cells show higher efficiencies mainly due to an increase of the open circuit voltage. In this study, InGaP/InGaAs/Ge triple-junction solar cells have been grown by a low pressure metalorganic chemical vapor deposition. Photovoltaic characteristics of the fabricated solar cells are investigated with a class A solar simulator under concentrated illuminations from 1 to 100 suns. Ideally, the open circuit voltage should increase with the current level when maintained at the same temperature. However, the fabricated solar cells show degraded open circuit voltages under high concentrations around 100 suns. This means that the heat sink design is not optimized to keep the cell temperature at $25^{\circ}C$. To demonstrate the thermal degradation, changes of the device performance are investigated with different bonding conditions and heat sink materials.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.412-417
• /
• 2010

Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.