• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1431-1433
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• 1996

Effective ionization coefficients for (100), (110) and (111) oriented gallium arsenide are extracted from the ionization coefficients far electrons and holes. Analytical formulas for the breakdown voltage of the GaAs Schottky rectifiers are derived by employing the ionization coefficients. The breakdown voltages obtained from our analytical model agree fairly well with the numerical results as well as the experimental ones reported in the range of $10^{14}\;cm^{-3}$ - $5{\times}10^{17}\;cm^{-3}$ doping concentrations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.216-216
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• 2012

The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1033-1041
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• 1990

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.566-568
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• 2003

The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.574-579
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• 1999

A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of $2.6{\times}10^8/\textrm {cm}^2$ was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of $10^{17}~10^{18}/\textrm{cm}^3$ and 200~400 $\textrm{cm}^2$/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of $8{\times}10^{17}/{\textrm}{cm}^3$.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.515-519
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• 1999

We have investigated the photoreflectance characteristics for In\ulcornerGaAs/GaAs heterojunction structure grown by molecular beam epitaxy (MBE). The E\ulcorner bandgap energy of In\ulcornerGa\ulcornerAs at room temperature was observed at about 1.3 eV. From this result, the indium composition x value was calculated. The shoulder peaks were observed higher than E\ulcorner peaks, and peak positions were shifted toward 12 meV to 70 meV higher energy with increasing doping concentrations. The shoulder peaks can be observed by In segregation and re-evaporation. However, we think that indium re-evaporation cause th shift of shoulder peaks after epilayer growth.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.