• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.339-342
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• 2007

$Cu(In_{1-x}Ga_{x})Se_2$(CIGS)는 매우 큰 광흡수계수를 가지고 있으므로 박막형 태양전지의 광흡수층 재료로서 많은 연구가 진행되고 있다. 박막이 태양전지의 광흡수층으로 이용되기 위해서는 큰 결정크기와 평탄한 표면, 적당한 전기적 특성을 가져야 한다. 이러한 특성들은 CIGS 박막의 조성에 큰 영향을 받고 있는 것으로 보고되고 있다. 본 연구에서는 동시증발법을 이용하여 Cu/(In+Ga) 비를 0.9로 고정한 후 Ga 조성(Ga/(In+Ga)의 비 : 0.32, 0.49, 0.69, 0.8, 1)을 변화시켜 Wide band gap CIGS 박막태양전지를 만들었다. 기판은 soda line glass를 사용하였고 뒷면 전극으로는 Mo를 스퍼터링법으로 증착하였다. 또한 버퍼층으로는 기존에 쓰이고 있는 CdS를 CBD(Chemical Bath Deposition)법으로 층착시켰으며, 윈도우층으로는 i-ZnO/n-ZnO를 스파터링 법으로 층착하였다. 그리고 앞면전극으로는 Al을 E-beam 으로 증착하였다. 분석은 XRD, SEM, QE로 분석하였다. 위 실험에서 얻은 결과로는 Ga/(In+Ga)비가 증가할수록 Cu(In,Ga)Se2 박막은 회절 peak들이 큰 회절각으로 이동하였고, 이것은 Ga 원자와 In 원자의 원자반경의 차이에서 기인된 것으로 사료된다. 또한 Ga 조성이 증가할수록 단파장 쪽으로 이동하는 것을 볼 수 있으며, Voc가 증가하다가 에너지 밴드캡이 1.62 eV 이상에서는 Voc가 감소하는 것을 볼 수 있는데 이것은 Ga 조성이 증가할수록 에너지 밴드캡이 커지면서 defect level 이 존재하기 때문인 것으로 사료된다. Ga/(In+Ga)비가 1일 때의 변환효율은 8.5 %이고， Voc : 0.74 (V), Jsc : 17.2 ($mA/cm^{2}$), F.F : 66.6(%) 이다.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.65-70
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• 2015

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.314.2-314.2
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• 2013

CIGS 박막의 물성은 조성에 크게 영향을 받으며, 특히 박막 내 Cu/(In+Ga) 비는 매우 중요한 변수로서 태양전지 특성에 영향을 주게 된다. Cu(In1-xGax)Se2 박막의 전하농도 및 반도체로의 성격을 가장 명확하게 결정하는 조성비는 Cu/(In+Ga) 비이다. 태양전지와 같은 소자로 작용하기 위해서는 Cu/(In+Ga) 비가 1보다 작아야 한다. 고효율의 태양전지는 Cu/(In+Ga)조성이 0.85~0.95로 slightly Cu-poor가 되어야 만들어진다. 본 연구에서는 Cu조성에 따른 CIGS 박막의 구조적, 전기적 특성과 CIGS 태양전지 효율 특성에 관하여 연구하였다. 미세구조 분석결과 Cu 조성이 증가함에 따라 큰 결정립을 가지며 결정립의 성장이 고르게 되어 접합 형성을 좋게 하는 경향을 보였다. X선 회절 분석결과, Cu 함유량 비율이 증가하면서 <112>의 우선배향성에서 <220/204>으로 변화하였다. 그러나, Cu/(In+Ga) 비율이 1이상이 첨가됨에 따라 우선배향은 다시 <112>로 변화함을 알 수 있었다. EDX 분석결과 Ga/(In+Ga) 0.31, Cu/(In+Ga) 0.86의 비율일 때, Carrier density $1.49{\times}1016$ cm-3을 나타내었다. CIGS의 태양전지의 효율 측정결과 Voc=596mV, Jsc=37.84mA/cm2, FF=72.96%로 ${\eta}$=16.47%를 달성하였다.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.314-318
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• 1989

Thin films of undoped and Ga-doped zinc oxide have been prepared by rf sputtering. The films deposited on substrates, which have a columnar structure with the c-axis perpendicular to the substrate surface, consist of very small crystal grains (500-1000 ${\AA}$). Considering doping effects, the electrical resistivity of Ga-doped films decreased by an order of $10^3$ compared to undoped films and the optical transmission was above 80% in the visible range and the optical band gap widened as the Ga content increased.

• International Journal of Costume and Fashion
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• v.14 no.2
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• pp.33-50
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• 2014

Investigations on the symbolic role, spiritual health benefits and efficacy of the clothing items of the Ga wolomo (chief priest) have received little attention. Highlighting the relevance of these clothes, this paper focuses on the chief priest's dress code for his appointment, confinement, ordination, ceremonial and daily life activities. Data were collected through content analysis, participant observation and interviews with people from selected Ga communities, such as La, Teshie and Ga Mashie. The findings revealed that the selection of the chief priest is confirmed with a special clothing item. His traditional clothes and adornment also have meanings, importance and symbolic interpretations; explained in their uses, colour and style. As the spiritual head, the role of the chief priest's costume is very distinguished and symbolic in executing his duties; protecting, strengthening faith, confidence and assurance during spiritual healing, and when solving pertinent problems in the community. The paper concludes by recommending further research and documentation on other aspects of the Ga clothing culture, such as hand items and hair styles from the pre-colonial period to the present.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1364-1368
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• 1999

Langasite( La3Ga5SiO14) is suitable for new piezoelectric properties. Langasite can be applied for communication de-vices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic cha-racteristics. In this study Langasite( La3Ga5SiO14) single crystals were successfully grown by using self-designed Czo-chralski system. From the results of optical properties it was found that crystals having a high quality and higher optical transmittance were grown at atmosphere of 1 to 30 vol% of oxygen content.

• Journal of Bio-Environment Control
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• v.28 no.3
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• pp.234-242
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• 2019

We analyzed the anthocyanin accumulation, abscisic acid (ABA), gibberellic acid (GA) contents and metabolic genes expression in berry skins under high temperature (High T) at veraison, in order to investigate the cause of bad coloration of 'Kyoho' grape due to High T in summer season. The coloration of 'Kyoho' grapes was stopped by High T for 10 days from veraison, and the fruit quality was not affected except skin color. Total anthocyanin of skins was decreased by High T treatment and malvidin and peonidin were decreased compared to control. In berry skins, ABA content did not decrease by High T treatment, but it was rather higher than that of control. GA content was increased about two times compared to the control after 10 days of High T treatment, which caused decreased ratio of ABA/GA. Analysis of expression of anthocyanin biosynthetic genes showed that the early biosynthetic genes were not affected by High T and the expression of UFGT was decreased by temperature treatment. ABA biosynthetic gene expressions were not affected by High T and the expression of GA20ox1 and GA2ox1/2, which are known to regulate the biosynthesis and inactivation of GA, were increased and decreased by High T, respectively. Therefore, the bad coloration of 'Kyoho' grapes under the High T at veraison was due to inhibition of anthocyanin biosynthesis of skin, and it was suggested that the anthocyanin biosynthesis was controlled by the ratio of ABA and GA rather than ABA content.