• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.339-342
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• 2007

$Cu(In_{1-x}Ga_{x})Se_2$(CIGS)는 매우 큰 광흡수계수를 가지고 있으므로 박막형 태양전지의 광흡수층 재료로서 많은 연구가 진행되고 있다. 박막이 태양전지의 광흡수층으로 이용되기 위해서는 큰 결정크기와 평탄한 표면, 적당한 전기적 특성을 가져야 한다. 이러한 특성들은 CIGS 박막의 조성에 큰 영향을 받고 있는 것으로 보고되고 있다. 본 연구에서는 동시증발법을 이용하여 Cu/(In+Ga) 비를 0.9로 고정한 후 Ga 조성(Ga/(In+Ga)의 비 : 0.32, 0.49, 0.69, 0.8, 1)을 변화시켜 Wide band gap CIGS 박막태양전지를 만들었다. 기판은 soda line glass를 사용하였고 뒷면 전극으로는 Mo를 스퍼터링법으로 증착하였다. 또한 버퍼층으로는 기존에 쓰이고 있는 CdS를 CBD(Chemical Bath Deposition)법으로 층착시켰으며, 윈도우층으로는 i-ZnO/n-ZnO를 스파터링 법으로 층착하였다. 그리고 앞면전극으로는 Al을 E-beam 으로 증착하였다. 분석은 XRD, SEM, QE로 분석하였다. 위 실험에서 얻은 결과로는 Ga/(In+Ga)비가 증가할수록 Cu(In,Ga)Se2 박막은 회절 peak들이 큰 회절각으로 이동하였고, 이것은 Ga 원자와 In 원자의 원자반경의 차이에서 기인된 것으로 사료된다. 또한 Ga 조성이 증가할수록 단파장 쪽으로 이동하는 것을 볼 수 있으며, Voc가 증가하다가 에너지 밴드캡이 1.62 eV 이상에서는 Voc가 감소하는 것을 볼 수 있는데 이것은 Ga 조성이 증가할수록 에너지 밴드캡이 커지면서 defect level 이 존재하기 때문인 것으로 사료된다. Ga/(In+Ga)비가 1일 때의 변환효율은 8.5 %이고， Voc : 0.74 (V), Jsc : 17.2 ($mA/cm^{2}$), F.F : 66.6(%) 이다.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1040-1046
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• 1996

Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• Korean Journal of Environmental Agriculture
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• v.42 no.4
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• pp.389-395
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• 2023

This study evaluated the effects of gibberellic acid (GA₃) on the growth and quality of creeping bentgrass (Agrostis palustris Huds.). Experimental treatments included a No application of fertilizer and GA₃ (NFG) Control [3 N active ingredient (a.i.) g/m²], 0.3GA₃ (GA₃ 0.3 a.i. mg/m²/200 mL), 0.6GA₃ (GA₃ 0.6 a.i. mg/m²/200 mL), 1.2GA₃ (GA₃ 1.2 a.i. mg/m²/200 mL), and 2.4GA₃ (GA₃ 2.4 a.i. mg/m²/200 mL). Additionally, the study included a 1.5N+GA₃ experiment with similar GA₃ treatments combined with 1.5N a.i. g/m² : NFG, Control (3N a.i. g/m²), 1.5N+ 0.3GA₃ (1.5N a.i. g/m²+GA₃ 0.3 a.i. mg/m²/200 mL), 1.5N+0.6GA₃ (1.5N a.i. g/m²+GA₃ 0.6 a.i. mg/m²/200 mL), 1.5N+1.2GA₃ (1.5N a.i. g/m²+GA₃ 1.2 a.i. mg/m²/ 200 mL), and 1.5N+2.4GA₃ (1.5N a.i. g/m²+GA₃ 2.4 a.i. mg/m²/200 mL). Compared to the NFG, turf color index chlorophyll content was not significantly different (p< 0.05). However, shoot length in 1.2GA₃, 2.4GA₃, 1.5N+0.3GA₃, 1.5N+0.6GA₃, 1.5N+1.2GA₃, and 1.5N+2.4GA₃ treatments increased by 0.8%, 10.6%, 5.15%, 8.3%, 13.5 %, and 21.6%, respectively, compared to the control. As compared to the control, clipping yield in 1.5N+1.2GA₃ and 1.5N+2.4GA₃ treatments increased by 7.1% and 14.3 %, respectively. These results indicated that GA₃ application increased shoot length, with the 1.2GA₃ treatment showing shoot length similar to the control (3N a.i. g /m² ).

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.75-81
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• 2011

This paper presents a novel method for image classification based on a hybrid genetic algorithm (GA) and support vector machine (SVM) approach which can significantly improve the classification performance for content-based image retrieval (CBIR). Though SVM has been widely applied to CBIR, it has some problems such as the kernel parameters setting and feature subset selection of SVM which impact the classification accuracy in the learning process. This study aims at simultaneously optimizing the parameters of SVM and feature subset without degrading the classification accuracy of SVM using GA for CBIR. Using the hybrid GA and SVM model, we can classify more images in the database effectively. Experiments were carried out on a large-size database of images and experiment results show that the classification accuracy of conventional SVM may be improved significantly by using the proposed model. We also found that the proposed model outperformed all the other models such as neural network and typical SVM models.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.159-159
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• 2006

• Journal of Ginseng Research
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• v.13 no.2
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• pp.229-233
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• 1989

The effect of some phytohormones and light on the growth, ADC activity and polyamine content in ginseng was studies. In seedlings, the growth, ADC activity and putrescine content were in creased by Ghs treatment. ADC activity ann putrescine content were slightly slightly derreased by ABA, but not changed by kinetin. Light treatment increased ADC activity and putrescine content greatly. In two year ginseng leaves treated by GA3, the ADC actin$.$its reached maximum and the spermidine content reached maximum 2 days faster than in the control. Thtse results suggest the possibility that these regulators are closely related to growth and polyamine cotent. UeVo'ordsEPanaxgineng C.A. Meyer, Polyamine, Putrescine spermidine, arginine decarboxylose, GA3 kiiletin , ABA.

• Korean Journal of Plant Resources
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• v.36 no.5
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• pp.508-516
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• 2023

Germination, growth characteristics, and content of useful components were analyzed through GA₃ treatment of Angelica acutiloba (Siebold & Zucc.) Kitagawa seeds, to provide basic data for cultivation technology. The moisture absorption rate of the seeds was 62.07% after 2 hours of soaking, and the highest value was 122.15% after 48 hours. The appropriate seed germination temperature for the species ranged from 10℃ to 25℃. It was confirmed that the growth of seedlings increased as the GA₃ concentration increased, but there was no significant difference in the content of useful components according to the GA₃ treatment.