• 한국작물학회지
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• 제48권4호
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• pp.281-285
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• 2003

For storage periods of tubers in Chinese yam, the levels of $\textrm{GA}_{44}$ and $\textrm{GA}_{20}$ was constant, meanwhile both $\textrm{GA}_{53}$ and $\textrm{GA}_{19}$ level were always higher than that of $\textrm{GA}_{44}$ and $\textrm{GA}_{20}$ㆍ $\textrm{GA}_9$ content as precursor of $\textrm{GA}_4$ was not changed during storage. $\textrm{GA}_{24}$ content was low to below 0.2 ng for 90 days after storage, $\textrm{GA}_{36}$ content as precursor of $\textrm{GA}_4$ like $\textrm{GA}_9$ was about 6-8 fold higher than that of $\textrm{GA}_9$ during storage. GA contents of the two gibberellin biosynthetic pathways were gradually increased when storage periods were progressed. Bioactive GA$_1$ content as the GA members of an early C-13 hydroxylation was always constant, and its content was very low as below 0.1ng per dry weight, meanwhile, bioactive $\textrm{GA}_4$ content as the GA members of non C-13 hydroxylation was drastically increased, also, its content was highest at 90 days after storage, and then decreased at 120 days after storage. Consequently, we suggest that $\textrm{GA}_4$ may be involved in controlling tuber sprouting in Chinese yam.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.438-440
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• 2008

Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• Journal of Plant Biotechnology
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• 제32권2호
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• pp.139-144
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• 2005

본 연구는 기내 배양한 나도 풍란에 식물생장억제제인 Uniconazole, Ancymidol, Paclobutrazol의 종류별, 농도별 처리가 식물체내 내생 GA 유사물질의 활성 및 ABA 유사물질의 함량의 변화에 미치는 영향을 알아보기 위하여 실시되었다. 지상부인 잎에서는 Uniconazole 0.05 mg/L, Ancymidol 0.1 mg/L, Paclobutrazol 0.3 mg/L 처리 시 ABA 유사물질의 함량은 대조구보다 낮았으며, GA유사물질의 활성은 대조구 보다 높거나 비슷한 수준이었다. 하지만 처리농도가 높아짐에 따라 ABA 유사물질의 농도는 높아졌으나, GA 유사물질의 활성은 비교적 억제되었다. 지하부인 뿌리에서는 Uniconazole 0.05, 0.2mg/L, Ancymidol 0.2 mg/L, Paclobutrazol 0.1 mg/L 처리에서 ABA 유사물질의 함량이 대조구보다 낮았고, 그 이상의 농도에서는 높았다. GA 유사물질의 활성은 비교적 저 농도에서는 높았으나, 고농도 처리에서는 저 농도와 비교하여 활성이 억제되었다.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2022년도 추계학술대회
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• pp.284-284
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• 2022

The overall effects of gibberellic acid (GA3) with NaCl on different rice genotypes are inadequately understood. The present study determines the effect of different GA3 concentrations on the morphophysiological, molecular and biochemical effects of 120 mM NaCl salt stress in rice seedlings. Salt stress reduced germination percentages and seedling growth and decreased bioactive GA content. It also downregulated the relative expression of a-amylase-related genes - OsAmy1A, OsAmy1C, and OsAmy3C in the salt-sensitive IR28 cultivar. Salt stress differentially regulated the expression of GA biosynthetic genes. Salt stress increased antioxidant activity in all rice genotypes tested, except in IR28. GA3 (50 and 100 µM) mitigates the effect of salt stress, rescuing seed germination and growth attributes. GA3 significantly increased bioactive GA content in Nagdong and pokkali (50 µM) and Cheongcheong and IR28 (100 µM) cultivars. The a-amylase genes were also significantly upregulated by GA3. Similarly, GA3 upregulated OsGA2oxl and OsGA2ox9 expression in the Cheongcheong and salt-sensitive IR28 cultivars. The present study demonstrated that salt stress inactivates bioactive GA - inhibiting germination and seedlings growth - and decreases bioactive GA content and GSH activity in IR28 and Pokkali cultivars. Further, GA3 significantly reversed the effects of 120 mM NaCl salt stress in different rice genotypes. The current study also suggests if we know the coastal area water NaCl concentration we can apply the exogenous GA3 accordingly. Thus, we would be able to grow rice cultivars near the coastal area and reduce the rice damage by salinity.

• 한국작물학회지
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• 제51권6호
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• pp.523-526
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• 2006

When $GA_{4}$ was applied to heading stage, it was examined to understand the change of plant hormones and starch during grain filling and ripening. Exogenous gibberellin caused a dramatic decrease in endogenous ABA content. Endogenous $GA_{4}$ content in both superior and inferior part was more promoted in $GA_{4}-treated$ rice grain than in the control. $GA_{1}$ content of an inferior part was not detected in the control and $GA_{4}-treated$ rice otherwise $GA_{4}$ was detected in all grain parts. Ripened grain rate in $GA_{4}-treated$ rice grain was lower than that of the control plant. Amylopectin from $GA_{4}-treated$ grain contained more very short chains with degree of polymerization (DP) between 4 and 8 than amylopectin from the control plant. It suggests strongly that fine structure of rice endosperm may be changed by exogenously applied $GA_{4}$ in rice plants.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.149-152
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• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1264-1267
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• 1998

$Cu(In_xGa_{1-x})Se_2$ thin films were prepared and characterized with various Ga contents. As the Ga content increased, the grain size of CIGS film became smaller. The 2 $\theta$ values in XRD patterns were shifted to larger values and the overlapped peaks were splitted. The energy bandgap increased from 1.04 to 1.67 eV and the resistivity decreased. The solar cell fabricated with ZnO/CdS/$Cu(In_{0.7}Ga_{0.3})Se_2/Mo$ structure yielded an efficeincy of 14.48% with an acitive area of 0.18 $cm^2$. The efficiency decreased with further increase of Ga content.

• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.1-5
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• 2018

본 연구에서는 InGaN/GaN multi quantum well (MQW)에서 Indium (In) 도핑효과에 따른 광전기화학적 특성을 관찰하였다. 기판으로는 Sapphire을 사용하였고, 각 Quantum well (QW)을 구성하고 있는 InGaN의 조성을 다르게 하였다. 투과도 측정 결과 일정한 In 조성을 가진 InGaN/GaN MQW에 비해 각 QW의 In 조성을 다르게 한 InGaN/GaN MQW에서 흡수도가 향상되는 것을 확인할 수 있었다. 이는 각각 다른 In 조성을 가진 InGaN 층이 더 넓은 영역의 스펙트럼 에너지를 가지는 빛을 흡수하기 때문인 것으로 생각된다. 광학적 특성을 평가하기 위해 진행한 상온 photoluminescence (PL) 실험을 진행한 결과, 역시 다양한 In 조성을 가진 InGaN/GaN MQW이 더 넓은 파장에서 발광이 나타나는 것을 확인할 수 있었다. 이들 샘플에 대한 광전기화학적 특성평가를 통하여, gradation In 조성을 가지고 있는 InGaN/GaN MQW이 일정한 In 조성을 가지는 InGaN/GaN MQW에 비해 광전기화학적 물분해 능력이 월등히 향상됨을 확인하였다.