• Clinical and Experimental Pediatrics
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• 제62권1호
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• pp.36-41
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• 2019

Purpose: In this study, we investigated the clinical features and prognostic factors of early-onset sepsis (EOS) in neonatal intensive care unit (NICU) patients. Methods: A retrospective analysis was conducted on medical records from January 2010 to June 2017 (7.5 years) of a university hospital NICU. Results: There were 45 cases of EOS (1.2%) in 3,862 infants. The most common pathogen responsible for EOS was group B Streptococcus (GBS), implicated in 10 cases (22.2%), followed by Escherichia coli, implicated in 9 cases (20%). The frequency of gram-positive sepsis was higher in term than in preterm infants, whereas the rate of gram-negative infection was higher in preterm than in term infants (P<0.05). The overall mortality was 37.8% (17 of 45), and 47% of deaths occurred within the first 3 days of infection. There were significant differences in terms of gestational age (26.8 weeks vs. 35.1 weeks) and birth weight (957 g vs. 2,520 g) between the death and survival groups. After adjustments based on the difference in gestational age and birth weight between the 2 groups, gram-negative pathogens (odds ratio [OR], 42; 95% confidence interval [CI], 1.4-1,281.8) and some clinical findings, such as neutropenia (OR, 46; 95% CI, 1.3-1,628.7) and decreased activity (OR, 34; 95% CI, 1.8-633.4), were found to be associated with fatality. Conclusion: The common pathogens found to be responsible for EOS in NICU patients are GBS and E. coli. Gram-negative bacterial infections, decreased activity in the early phase of infection, and neutropenia were associated with poor outcomes.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.684-685
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• 2013

p-형 반도체인 Cu(In,Ga)$Se_2$ (CIGS) 광 흡수 층은 이보다 에너지 밴드 간격이 큰 n-형 반도체와 이종 접합을 형성한다. 흡수층과 윈도우층 사이의 결정구조 차이와 밴드갭 에너지 차이를 완화시키기 위해 버퍼층이 필요하다. 버퍼층을 형성하는 물질로 화학적 용액 성장법(Chemical Bath deposition)을 사용한 CdS가 많이 적용되어 왔으나 Cd의 유해성 및 습식 공정으로 인한 연속공정에 대한 어려움이 있다. 따라서 버퍼층을 Cd을 포함하지 않는 ZnS, $In_2S_3$, (Zn, Mg)O 등과 같은 물질로 대체하여 원자층 증착법(Atomic Layer Deposition), 펄스레이져증착법(Pulsed Laser Deposition), 스퍼터링(sputtering) 등과 같은 건식으로 성장시키는 연구가 활발히 진행되고 있다. 본 연구에서는 $ZnO_{1-x}S_x$ ($0.2{\leq}x{\leq}0.4$)를 반응성 스퍼터링으로 증착하여 큰 밴드갭 에너지와 높은 광투과율를 갖는 버퍼층을 제작하였다. CIGS 박막의 손상을 줄여주기 위하여 RF 파워는 240, 200, 150, 100 W로 변화시켰다. CIGS 태양전지의 I-V 측정 결과, RF 파워가 150 W일 때 10.7%의 가장 높은 변환 효율을 보였고, 150 W 이상에서는 파워가 증가할 때 단락전류는 감소하였으며 개방전압은 다소 증가하였다. 반면 100 W에서 단락전류는 다소 증가하는 것에 반해 개방 전압이 급격히 낮아졌다. 이것은 파워에 따라 결합되는 산소의 양이 다르기 때문으로 생각된다.

• 한국초지조사료학회지
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• 제38권3호
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• pp.150-155
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• 2018

This study was conducted to determine grazing intensity of growing Korean native goats(Capra hircus coreanae) on mountainous pasture. It was carried out to obtain basic information for improvement of mountainous pasture management and establishing feeding system of Korean native goat. A total of 20 goats were grouped by feeding systems [A mountainous pasture grazing group (Concentrated feed of 1.5% body weight, treatment 1, T1, n=10) and a barn feeding group (TMR, treatment 2, T2), n=10] to conduct study from April to September. The average forage productivity of the mountain pasture was $500.9{\pm}61.41kg/ha$. The average dry matter intake in T1 was 0.64 and the calculated grazing intensity was 21 head/ha. In productivity, when the two treatments(T1, T2) were compared, the dry matter intake was about two to three times the difference. The average daily gain per day during the experiment was 63.3 in the mountain pasture and 120 g in barn feeding. When grazing, considering mountainous pasture productivity it is necessary to increase the productivity through proper feeding. The feed costs of black goats raised by grazing on the grassland in the same period showed an average 75% reduction compared to barn feeding. As a result of this study, it can be expected that a considerable reduction of feed costs can be expected in the breeding of Korean native black goat using the mountain pasture.

• 센서학회지
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
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• pp.20-20
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• 2010

GTA (Gas Tungsten Arc)용접은 불활성 분위기에서 용접이 이루어지기 때문에 타 아크용접법에 비해 용접부 품질이 우수하여 고품질이 요구되는 산업분야에 널리 이용되고 있다. 하지만 스테인리스강으로 pipe를 제조하기 위해 GTA 용접을 적용할 경우, Laser 및 고주파 용접 (HFIW)에 비해 용접부 품질 및 용접속도가 낮기 때문에 pipe를 제조하는 산업에서 적용에 제한을 받고 있다. 하지만, GTA는 laser 혹은 HFIW에 비해 가격이 1/10수준으로 낮고, 용접부 gap tolerance 및 용접면 관리범위가 넓은 장점이 있기 때문에 GTA의 용접속도 및 용접품질을 향상시키기 위한 연구가 꾸준히 진행되고 있다. 일반적으로 스테인리스강 GTA용접 시 용접속도를 향상시키기 위해, 모재의 성분 제어 (합금성분 최적화-Al, S, Se, O등), Flux 도포 기술 (산화물을 용접전에 도포하여 용접속도 향상) 및 혼합보호가스 적용 등이 있다. 스테인리스강 용접 시 보호가스로는 용접부 품질을 확보하기 위해 Ar을 주로 사용하고 있다. 하지만 용입 특성을 향상시키기 위해 아크의 온도를 높일 수 있는 He, 혹은 $H_2$ gas를 단독 혹은 혼합하여 사용하고 있다. 오스테나이트계 스테인리스의 경우 용입특성을 향상시키기 위해 Ar에 $H_2$를 2~10%정도 혼합하여 사용하고 있다. 페라이트계 스테인리스강은 수소에 대한 고용도가 상대적으로 작아 용접부 수소 취화를 일으킬 수 있기 때문에 적용에 제한을 받고 있어 그 대안으로 산소를 극히 소량을 혼합하여 용입성 향상에 대한 연구가 보고 되고 있다. 따라서 본 연구에서는 페라이트계 스테인리스강의 용입특성을 향상시킬 목적으로 Ar에 산소를 미량 첨가 (1%미만) 하여 용접전류 및 산소 함량에 따른 용입특성의 변화에 대해 연구하였다. 또한 기계적인 물성 및 부식특성을 평가하였고, 최종적으로 실용화 가능성을 파악하기 위해 용접전극의 수명 테스트를 실시하였다. 실시한 결과, 산소가 첨가량 증가 할수록 용입특성은 상승하였으며, 기계적인 물성 또한 산소를 첨가하지 않은 경우에 비해 거의 유사한 값을 얻을 수 있었다, 하지만 산소함량이 증가 할수록 전극의 수명은 감소하여 교체주기가 증가함을 알 수 있다. 본 연구를 통해 얻어진 기술을 상용화시키기에는 극복해야할 문제가 있지만, 소재 합금성분 설계 시 용접생산성 향상위한 산소성분 범위를 제시할 수 있으리라 판단된다.

• 공업화학
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• 제25권6호
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• pp.577-580
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• 2014

CIGS 태양 전지용 cadmium (Cd)-free $In(OH)_xS_y$ 버퍼층을 화학적 용액성장법을 이용해서 형성시켰고 최적 반응시간을 파악하였다. 투과율 측정과 함께 이온집적빔 시스템으로 직접 박막을 관찰해서 박막성장 조건을 최적화 하였으며 X선 회절분석법과 X선 광전자 분광법, 주사현미경을 이용해서 박막의 특성을 파악하였다. 그 결과 $In(OH)_xS_y$ 버퍼층의 증착을 위한 최적 반응 시간은 온도 섭씨 $70^{\circ}$의 조건에서 20 min임을 확인하였으며, 이때의 버퍼층의 두께는 57 nm 가량이었고 밴드갭 에너지는 2.7 eV를 나타내었다. 아울러 molybdenum (Mo)층과 CIGS층 위에서 $In(OH)_xS_y$ 버퍼층을 형성시키는 경우에 XPS 피크의 차이는 볼 수 없었다.

• 청정기술
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• 제16권4호
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• pp.245-253
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• 2010

대구경 강관 표면 보호를 위해 사용되는 필라멘트 와인딩 공정에 불포화 폴리에스터 (unsaturated polyester: UP)를 이용한 자외선 (ultraviolet) 경화 방법을 적용하고자, UP를 이용한 최적의 UV 경화 조건을 찾아보았다. 기존의 유기계 과산화물을 개시제로 사용한 열경화 방법에서는 개시제의 불안정성, 휘발성 유기물 발생, 열에 약한 대상물질의 변형 등 문제점이 발생하므로 이에 대한 개선책으로 UV 경화방법을 시도하였다. UV 경화에 사용되는 다양한 개시제 중에서 비교적 침투력이 높아서 두꺼운 고분자 층 형성이 가능한 개시제 2 종(Irgacure 819 및 Darocure 1173)을 선정하여 이들의 조합비율에 따라 경화된 UP 고분자에 대한 열역학적, 기계적 물성을 비교 분석하여 우수한 경화조건 (개시제 함량 1.5 phr, 혼합 비율 1:1.2, UV 램프로는 갈륨램프)을 찾아내었다. 또한 UP 광경화수지의 경도, 충격강도, 굴곡강도 향상을 위해 유리섬유를 수지 내에 적층하여 복합재료를 제조하고 이들의 특성을 비교한 결과 충격강도가 매우 향상되었다.

• 한국토양비료학회지
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• 제47권3호
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• pp.147-154
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• 2014

Consecutive pepper cultivation in plastic film houses may lead to salt accumulation because pepper is considered a heavy nutrient feeder. For this reason, appropriate methods of fertilizer application should be established. Thus, we investigated the effect of different intervals of side-dressing N and K fertilizer applications on soil and red pepper in a plastic film house. All the amounts of recommended compost and phosphorus fertilizer were applied as basal dressing. Cultivars of the pepper plant were Cheon-Ha-Dae-Se (CHDS) and NW-BiGaLim (NW-BGL). Nitrogen and potassium fertilizers were treated as side-dressing at different intervals, 22 times in every 10 days, 15 times in every 15 days, and 11 times in every 20 days. Soil pH decreased with decreasing the intervals of side-dressing applications, whereas electrical conductivity (EC) declined with the increasing fertilizer application intervals. In particular, EC value decreased by up to 75% with CHDS cultivar in the plot of 20 day-interval and with NW-BGL cultivar in the plot of 15 day-interval. The concentrations of available phosphorus in the soils increased with increasing the interval. The concentration of exchangeable $K^+$ increased but exchangeable $Ca^{2+}$ and $Mg^{2+}$ decreased in all the plots, except in the control plot. The concentrations of nitrogen and phosphorus in leaves of the pepper plants were lowest in the control plot. Potassium concentrations in the pepper leaves were high in the control plot and in the plots of CHDS with 10 day-interval and NW-BGL with 15 day-interval. Red pepper productivity was high in the plots of 10- and 15 day-intervals for CHDS cultivar and 15- and 20 day-intervals for NW-BGL cultivar. Therefore, the 15 day-interval of side-dressing N and K applications was considered as an appropriate method for cultivating pepper plants and protecting soil in plastic film houses.

• 한국재료학회지
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• 제21권11호
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• pp.634-638
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• 2011

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860$^{\circ}C$. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 ${\mu}m$ ${\times}$ 2 ${\mu}m$ area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.