• Journal of the Korean Solar Energy Society
• /
• v.23 no.2
• /
• pp.59-70
• /
• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Vacuum Society
• /
• v.7 no.1
• /
• pp.11-16
• /
• 1998

In this study, we prepared a Na$_2$Se/NH$_4$OH solution to investigate a passivation effect of Se on GaAs surface. X-ray photoelectron spectroscopy and photoluminescence (PL) were used to analyse the surface chemical bonding states and the optical properties of GaAs after Se-treatment and a successive exposure to air, respcetively. It was observed that all of the observed selenium bound with arsenic to form As-Se bond and showed only one oxidation state as -2. PL intensity of Se-passivated surface was larger than that of HCI-cleaned surface, and this means that the effective reduction of surface state density of GaAs was successfully obtained by this treatment. However the existence of partial oxide on the Se-passivated surface was seemed to be a major cause to the degradation of Se passivation effcet. PL intensity of Se-passivated surface also decreased according to air-exposure and converged to that of HCI-cleaned surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.352-356
• /
• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Vacuum Society
• /
• v.1 no.2
• /
• pp.254-258
• /
• 1992

Iodine 화학수송법으로 성장한 Ni-doped CdGa2Se4와 undoped CdGa2Se4 단결정 의 PL 및 PLE 스펙트럼을 조사하였다. Undoped CdGa2Se4 단결정의 PL 스펙트럼에서는 전도대아래 준 연속적으로 분포된 electron trap과 deep level, 그리고 가전자대 위 0.07eV, 0.12eV에 있는 acceptor level 사이의 전자전이에 의한 2개의 emission band를 2.13eV와 1.20eV 영역에서 관측하였으며, Ni-doped 단결정에서는 Ni2+ 이온의 여기상태 3T1(3P)와 바 닥상태 3T1(3F) 사이의 전자전이에 의한 emission band를 1.48eV 영역에서 관측하였다. 이 러한 결과로부터 제안된 CdGa2Se4의 energy band model은 본 연구의 PL mechanism을 설명하는데 가능함을 보여주었다.

• Journal of the Korean Vacuum Society
• /
• v.3 no.3
• /
• pp.346-354
• /
• 1994

삼원화합물 반도체 CuAlSe2 및 CuGaSe2 단결정의 solid solution 인 CuAl1-xGaxSe2 및 cobalt를 2.0 mol% 첨가한 CuAl1-xGaxSe2 : Co2+ 단결정을 iodine을 수송물질로 사용한 화학수송법으로 성장시켰 다. source material로는 CuAl1-xGaxSe2 의 화학조성비에서 Se를 3.0mol% 과잉으로 첨가하여 합성한 ingot를 사용하였으며 불순물이 첨가된 CuAl1-xGaxSe2:Co2+ 단결정성장시에는 source ma-terial 에 cobalt 분말을 2.0mol% 첨가하였다. X-선 회절무늬로부터 성장된 단결정들이 chalcopyrite 결정구조를 하고 있음을 확인하였으며 격자상수를 구하였다. 광흡수 spectra 측정으로부터 성장된 단결정에서 나타 는 cobalt 불순물에 의한 광흡수 peak가 Td 대칭점에위치한 Co2+ 이온의 에너지 준위들간 전자전이에 의해 나타남을 규명하였다.

• Journal of Magnetics
• /
• v.12 no.2
• /
• pp.59-63
• /
• 2007

Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.

• Current Photovoltaic Research
• /
• v.1 no.1
• /
• pp.38-43
• /
• 2013

$Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.10
• /
• pp.829-838
• /
• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
• /
• v.23 no.1
• /
• pp.51-57
• /
• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.5
• /
• pp.179-186
• /
• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.