• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.