• Journal of KIISE
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• v.42 no.12
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• pp.1467-1473
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• 2015

In this paper, we implemented a parallel random number generation program on GPU's, which are known for high performance computing, using LCG (Linear Congruential Generator). Random numbers are important in all fields requiring the use of randomness, and LCG is one of the most widely used methods for the generation of pseudo-random numbers. We explained the parallel program using the NVIDIA CUDA model and MPI(Message Passing Interface) and showed uniform distribution and performance results. We also used a Monte Carlo algorithm to calculate pi(${\pi}$) comparing the parallel random number generator with cuRAND, which is a CUDA library function, and showed that our program is much more efficient. Finally we compared performance results using multi-GPU's with those of ideal speedups.

• Journal of the Korea Computer Graphics Society
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• v.16 no.3
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• pp.1-10
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• 2010

In this paper, we propose a novel noiseless method of BRDF rendering on a GPU in real-time. Illumination at a surface point is formulated as an integral of BRDF producted with incident radiance over the hemi-sphere domain. The most popular method to compute the integral is the Monte Carlo method, which needs a large number of samples to achieve good image quality. But, it leads to increase of rendering time. Otherwise, a small number of sample points cause serious image noise. The main contribution of our work is a new importance sampling scheme producing a set of incoming ray samples varying continuously with respect to the eye ray. An incoming ray is importance-based sampled at different latitude angles of the eye ray, and then the ray samples are linearly connected to form a curve, called a thread. These threads give continuously moving incident rays for eye ray change, so they do not make image noise. Since even a small number of threads can achieve a plausible quality and also can be precomputed before rendering, they enable real-time BRDF rendering on the GPU.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.