• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.89-93
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• 2010

We study the giant magneto-resistance (GMR), coercivity and their dependence on the ferromagnetic layers adjacent to the nonmagnetic layer in a spin-valve structure, [Pd/ferromagnetic] multilayers with perpendicular anisotropy. We fabricated a basic spinvalve structure of $[Pd/Co]_2$/ferro-magnetic layer/nonmagnet/ferro-magnetic layer/$[Pd/Co]_2$/FeMn and investigated the dependence of its GMR and magnetic properties such ad coercivity on the ferromagnetic material to reduce the coercivity of the free layer. We try to reduce the freelayer coercivity by controlled the anisotropy, we insert the material NiFe, $Co_8Fe_2$, $Co_9Fe_1$ to ferromagnetic layers adjacent to the Cu layer. Then, we have been able to reduce the coercivity as low as 100 Oe, and also achieved 6.7% of magneto-resistance ratio when the ferromagnetic layer thickness was 0,7 nm.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.154-155
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• 2002

스핀밸브형 GMR(Giant magnetoresistance) 소자는 낮은 자장범위에서 큰 자기저항변화가 생기는 높은 민감도의 소자로서, 고밀도 자기기록매체의 재생헤드 및 MRAM(Magnetoresistance Random Access Memory) 등의 실제 응용에 있어 큰 자기저항비와 열적 안정성을 가지는 재료들을 필요로 한다. NiO, a-$Fe_2O_3$, NiO/a-$Fe_2O_3$ 등과 같은 산화물의 경우, 높은 Tn(Neel temperature)을 가지므로 이를 이용한 Bottom형 스핀밸브에 대한 연구가 활발히 진행되어 왔다. (중략)

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.5
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• pp.421-426
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• 2008

The magnetic bio-sensor used the PHR (planar hall resistance) effect generated by the free layer in spin-valve giant magnetoresistance structure of Ta/NiFe/CoFe/Cu/NiFe/IrMn/Ta. The PHR element with micrometer size was fabricated through the photolithograph and dry etching process. The PHR signal with magnetic field was measured under the conditions of with and without single magnetic bead. A single magnetic bead of diameter $2.8\;{\mu}m$ was successfully detected using the PHR sensor. Therefore, the high resolution PHR sensor can be applied to bio-sensor application utilizing the output voltage variation of the PHR signals in the presence and absence of a single magnetic bead.

• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.197-202
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• 2009

The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.91-95
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• 1998

Exchange anisotropy between IrMn antiferromagnetic layer and NiFe ferromagnetic layer has been studied in IrxMn(100-x)/NiFe/Buffr/Si(100) films deposited by D. C. magnetron sputtering method. Among Zr, Ta, and Cu used as buffer layer, Zr and Ta enhanced the fcc(111) texture of NiFe and IeMn layer, but Cu did not affect microstructure of those layer. Strong fcc(111) texture of IrMn layer was confirmed to be the origin of exchange anisotropy of IrMn. Ir composition control in IrMn layer showed that {{{{ gamma -phase}}}} IrMn is stabilized between 10 and 30 at % Ir, an 21 at. % Ir in IrMn layer was optimum composition that showed maximum exchange anisotropy field. above 200 ${\AA}$ thickness of IrMn, antiferromagnetic property is stabilzed to show saturated exchange anisotropy field. Based pressure was confirmed to be critical requisite in IrMn-based spin-valve GMR system.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.141-145
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• 2001

The Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ exchange bias layers (EBLs), which have a small amounts of Pt, exhibit a high value of H$\_$ex/. The Si/Ni-Fe/Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBL shows the largest H$\_$ex/ of 187 Oe, which is equivalent to a exchange energy (J$\_$ex/) of 0.146 erg/cm$^2$. Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBLS are estimated to have blocking temperature of about 250 $\^{C}$, which is higher than those of Mn-Ir EBLs and Mn-Ir-Pt EBLs with higher Pt contents. This result implies that a little addition of Pt element promotes thermal stability in the Mn-Ir-Pt EBLs. The chemical stability of Mn-Ir-Pt EBLs was characterized by potentiodynamic test, which was performed in 0.001 M NaCl solution. The current density of Mn-Ir-Pt films was gradually reduced with increasing Pt content. The present results indicate that the Mn-Ir-Pt with a small amount of Pt is suitable for an antiferromagnetic material for a reliable spin valve giant magnetoresistance device.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.123-128
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• 2017

The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field ($H_{ex}$), coercivity ($H_c$), and MR ratio of Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/Ta(4 nm) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/Ta(4 nm) SV multilayer film showed $H_{ex}=2Oe$, $H_c=316Oe$, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/CoFe(3 nm)/Cu(2.5 nm)/CoFe(6 nm)/Ta(4 nm) SV multilayer film showed $H_c=37.5Oe$ and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of $H_{ex}$ and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.