• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.180-180
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• 2007

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.165-169
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• 1999

The thermal diffusivity of lead germanate single crystal was measured from room temperture up to the $200^{\circ}C$ by heating method. The thermal diffusivities were measured as k=0.0117, 0.0105, and $0.0112cm^2/^{\circ}C$ at $30^{\circ}C$, $177^{\circ}C$, and $180^{\circ}C$, respectively. It is identified that the heat capacity of the lead germanate single crystal is maximum at $177^{\circ}C$, and this point is phase transition temperature of $Pb_5Ge_3O_{11}$ single crystal.

• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.458-464
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• 1997

Mg-Cu-Si과 Mg-Cu-Ge계 3원 합금에서 비정질 생성범위와 열적, 기계적 성질을 조사하였다. Mg-Cu-Si계에서는 $15{\sim}45%Cu$, $0{\sim}10%Si$, Mg-Cu-Ge계에서는 $15{\sim}45%Cu$, $0{\sim}5%Ge$의 조성범위에서 각각 비정질 단상이 생성되었고, $15{\sim}22.5%Cu$, 2.5%Si(or Ge)의 조성범위에서 생성되는 비정질상은 180도 밀착굽힘을 하여도 파단되지 않는 양호한 인성을 가지고 있었으며, $Mg_{82.5}Cu_{15}Ge_{2.5}$비정질합금의 최대인장강도는 800 MPa로 결정질 Mg기 합금의 최대치인 300 MPa에 비해 월등히 높은 값을 나타내었다. 그러고 비정질합금의 결정화는 다음과 같은 과정으로 일어났다. 1) Si(or Ge) ${\le}$ 2.5%: 비정질 ${\to}$ 비정질+$Mg_2Cu$+Mg ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 2) Si(or Ge)=5%: 비정질 ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 3) Si=10%: 비정질 ${\to}$ 비정질+$Mg_2Si$ ${\to}$ $Mg_2Si$+$Mg_2Cu$+Mg.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.1
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• pp.37-42
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• 2016

The translocator protein (TSPO) has attracted scientist's attention for Positron Emission Tomography (PET) imaging due to correlation with brain cancer, stroke, and neurodegeneration. Recently, GE-180, a novel tricyclic derivative has been developed as a new high affinity agent for the TSPO and evaluated to confirm a possibility for the TSPO ligand. In this highlight review, several studies for the novel TSPO radiotracer are described.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• Journal of the Korean Society of Radiology
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• v.8 no.6
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• pp.287-292
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• 2014

In this study, the neutron capture cross section of $^{180}Ta$(natural existence ratio: 0.012 %) obtain by measuring has been compared with the evaluated data for the capture data. In generally, the neutron capture resonance is defined as Breit-Wigner formula. The formula consists of the resonance parameters such as neutron width, total width and neutron width. However in the case of $^{180}Ta$, these are very poor experimental neutron capture cross section data and resonance information in below 10 eV. Therefore, in the study, we analyzed the neutron resonance of $^{180}Ta$ with the measuring the prompt gamma-ray from the sample. And the resonance was compared with the evaluated data by Mughabghab, ENDF/B-VII, JEFF-3.1 and TENDL 2012. Neutron sources from photonuclear reaction with 46-MeV electron linear accelerator at Research Reactor Institute, Kyoto University used for cross section measurement of $^{180}Ta(n,{\gamma})^{181}Ta$ reaction. $BGO(Bi_4Ge_3O_{12})$ scintillation detectors used for measurement of the prompt gamma ray from the $^{180}Ta(n,{\gamma})^{181}Ta$ reaction. The BGO spectrometer was composed geometrically as total energy absorption detector.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.154-155
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• 2003

Substituting transition metals such as V, Cr, Mn, Fe, Co and Ni into semiconductors have been of interest because of its unique electrical and magnetic properties. It was reported that the magnetoresistance(MR) ratio of CrGe was 1.7% and 1 4% at 120 K in fields of 0.5 and 5 T, respectively. The MR ratio of FeGe was 19% at 180K. The electrical resistivity of CrGe changed according to Cr concentration. In this talk, we report transport properties of V-doped Ge single crystals with several different V concentrations. The carrier densities and mobilities will be determined from Hall measurement.

• Journal of electromagnetic engineering and science
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• v.15 no.1
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• pp.59-61
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• 2015

A wideband H-band detector operating near 300 GHz has been developed based on SiGe HBT technology. The detector consists of an on-chip antenna and a HBT differential pair for square-law detection. It showed responsivity of more than 1,700 V/W and noise equivalent power (NEP) smaller than $180pW/Hz^{0.5}$ for the measured frequency range of 250-350 GHz. The maximum responsivity and the minimum NEP were 5,155 V/W and $57pW/Hz^{0.5}$, respectively; both were obtained at 330 GHz with DC power dissipation at 9.1 W.

• Journal of Bio-Environment Control
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• v.16 no.3
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• pp.180-185
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• 2007

The effects of selenium (Se) and germanium (Ge) fertilization on the growth and quality of Chinese cabbages cultivated in spring and autumn and peppers cultivated in spring were investigated. $Se\;(Na_2SeO_4)\;and\;Ge\;(GeO_2)$ were supplied 5, 10, or 20 times in an aqueous solution of 0, 2, 4, or $8mg{\cdot}L^{-1}$ during the cultivation of Chinese cabbages and peppers. The fresh weight of Chinese cabbages increased by Ge fertilization with high concentration. But it was not affected by Se fertilization. The content of vitamin C increased by 10 times application with $4mg{\cdot}L^{-1}$ of Se or Ge. The concentration of Se in Chinese cabbage increased according to increasing concentration of Se fertilization. Se concentration was higher in the outer leaves than in the inner leaves. Se concentration in the mesophyll was higher than that in the midrib. Ge fertilization increased the uptake and concentration of Ge in autumn-cultivated Chinese cabbages. Se and Ge fertilization did not affect the fresh weight of peppers. The content of vitamin C in pepper increased by 20 times application of $2mg{\cdot}L^{-1}$ of Se. Vitamin C content in red peppers was twice as much as in green peppers.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.4 no.2
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• pp.31-36
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• 2005

Machining technique for optical crystals with single point diamond turning tool is reported in this paper. The main factors influencing the machined surface quality are studied and regularities of machining process are drawn. Optical crystals have been known to more and more important applications in the field of modern optics. Ge is more brittle material of poor machinability. The traditional machining method is polishing which has many shortcomings such as low production efficiency, poor ability to be automatically controlled and edge effect of the workpiece. The purpose of our research is to find the optimum machining conditions for ductile cutting of Ge and apply the SPDTM technique to the manufacturing of ultra precision optical components of Ge. As a result, the surface roughness is the best when cutting speed is 180m/min, feed rate is 2mm/min, depth of cut is $0.5{\mu}m$ and nose radius of tool is 0.8mm.