• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of Bio-Environment Control
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• v.25 no.3
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• pp.184-192
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• 2016

This study was carried out to investigate the effect of temperature ($15{\sim}40^{\circ}C$) and the spraying plant growth regulators ($GA_{4+7}+BA$ and prohexadione-calcium) during full blooming on pollen germination and pollen tube growth of the commercial apple cultivars ('Fuji' and 'Tsugaru') and apple cultivars bred in Korea ('Chukwang', 'Gamhong', 'Hongan', 'Honggeum', 'Hongro', 'Hwahong', 'Hongso', 'Summer dream' and 'Sunhong'). Pollen germination and pollen tube growth were increased with increasing temperature from 15 to $25^{\circ}C$, but high temperature over $30^{\circ}C$ inhibit those. The apple cultivar bred in Korea that shows the highest value on pollen germination and pollen tube growth at over $30^{\circ}C$ was 'Sunhong'. The spraying $GA_{4+7}+BA$ increased pollen germination and pollen tube growth than control, but that effect was not show at $40^{\circ}C$. The spraying prohexadione-calcium was not affect to pollen germination and pollen tube growth. In conclusion, if the air temperature during full bloom of apple tree rises about $30{\sim}35^{\circ}C$, the spraying $GA_{4+7}+BA$ after artificial pollination will be good to increasing fruit set.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• Journal of Microbiology and Biotechnology
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• v.15 no.1
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• pp.22-28
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• 2005

Gibberellins (GAs) play important roles in plant growth and development. Fifty-four fungi were isolated from the roots of 4 kinds of Sesamum indicum plants, and the production of GAs was spectrophotometrically examined. The number of GA-producing fungi was two strains from S. indicum, four strains from Gold S. indicum, and five strains from Brown S. indicum. Eleven fungi with GAs-producing activity were incubated for seven days in 40 ml of Czapek's liquid medium at $25^{\circ}C$ and 120 rpm, and the amount of each GA in the medium was measured by gas chromatographymass spectrometery (GC-MS). Penicillium commune KNU5379 produced more $GA_3$, $GA_4$, and $GA_7$ than Gibberella fujikuroi, Fusarium proliferatum, and Neurospora crassa which are known as GAs-producing fungi. GAs-producing activity of the P. commune KNU5379 was shown to produce 71.69 ng of $GA_1$, 252.42 ng of $GA_3$, 612.00 ng of $GA_4$, 259.00 ng of $GA_7$, and 202.69 ng of $GA_9$ in 25 ml of liquid medium. Bioassay of culture fluid of GA-producing fungi was also performed on rice sprout.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.346-352
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• 2008

Eu sites and the effect of Mg codoping were investigated in Eu-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on 620nm $^5D_0\;{\rightarrow}\;^7F_2$ Eu ionic level transition and revealed the existence of 4 different Eu sites including the known 2 sites. PL intensity from one of the sites increased by a factor of 1.6 by the Mg-codoping. The enhancement of PL by Mg-codoping was less pronounced than Er- and Nd-implanted GaN, in which the trap-mediated energy transfer dominates. In GaN:Eu the above-gap excitation transfers the energy directly to the Mg related Eu site.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.2
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• pp.104-108
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• 2015

Human serum albumin (HSA) has potential for diagnosis and therapy in clinical setting. The purpose of experiments was to develop and evaluate $^{68}Ga$-HSA as a PET agent for diagnosis of acute inflammation. NOTA-HSA was synthesized by conjugating 2-(p-isothiocyanatobenzyl)-1,4,7-triazacyclononane-1,4,7-triacetic acid to HSA in 0.1 M sodium carbonate buffer (pH 9.5) and then purified using a PD-10 size-exclusion column. NOTA-HSA was labeled with $^{68}Ga$ at room temperature for 10 min, and 8.4% sodium hydrogen carbonate buffer was added for neutralization. $^{68}Ga$-NOTA-HSA was purified using alumina N plus light cartridge and $0.22{\mu}m$ syringe filter. Labeling efficiency and radiochemical purity were determined by ITLC-SG with 0.1 M citric acid. Biodistribution study was performed in a male BALB/c mice model of Carrageenan-induced acute inflammation. Animal PET study was performed in acute inflammation mice model after tail vein injection of $^{68}Ga$-HSA. This radiotracer showed high labeling efficiency (>99%) around pH 7. Biodistribution study showed higher inflamed footpad uptake than control footpad uptake. Animal PET study revealed 2 times higher uptake on inflamed footpad compared to control footpad. In these experiments, we developed $^{68}Ga$-HSA for acute inflammation PET imaging and evaluated it in a mouse disease model. The results demonstrated that $^{68}Ga$-HSA has potential as a PET imaging agent for diagnosis of acute inflammation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.860-864
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• 1998

We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.323-330
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• 2002

In this paper, we have designed and fabricated an BWLL MMIC amplifier using GaAs PHEMT devices. We have optimized power divider/combiner size for small size of MMIC amplifier Using 0.2 ${\mu}$m AIGaAs/lnGaAs/GaAs PHEMT devices, the two stave MMIC amplifier has demonstrated a S$_{21}$ gain of 8.7 ㏈ with input/output return losses of lower than -10 ㏈ at 26.7 GHz. The size of this chip is 4.11 ${\times}$ 2.66 $\textrm{mm}^2$.