• Proceedings of the Plant Resources Society of Korea Conference
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• 2021.04a
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• pp.28-29
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• 2021

애기똥풀(Chelidonium majus L. subsp. asiaticum H.Hara)의 지상부는 백굴채라고 불리며 항암, 항균 등의 효능을 가지고 있어 예로부터 약용으로 이용되었다. 그러나 천연 약용소재로 개발가치가 높음에도 불구하고 실생묘의 대량 확보를 위한 종자번식 관련 연구가 전무한 실정이다. 본 연구에서는 애기똥풀의 발아 및 휴면 특성을 분석함으로써 추후 종자번식을 위한 기초자료를 제공하기 위해 수행되었다. 실험재료로 사용된 애기똥풀 종자는 2019년 6월 경상북도 봉화군에서 채종하였으며 정선 후 건조상태로 실온(25℃)에 보관하였다. 종자의 1000립중은 0.57±0.01g이며, 배종비는 0.21±0.12로 조사되어 형태적으로 미성숙한 배를 가지고 있다. 종자의 활력은 테트라졸륨 검정을 통해 79%로 확인되었다. 종자의 기본 함수율은 7.64±0.25%였으며, 침지 2일 차에 최대함수율(32.6±0.34%)에 도달하였다. 초기 발아검정은 25/15℃ (light/dark, 16/8h)챔버에서 명조건과 암조건으로 구분하여 30일간 진행하였으며, 암조건은 알루미늄 호일로 광을 완전히 차단하고 최종 발아율만 조사하였다. 발아율을 조사한 결과, 명조건은 0.75±0.80%, 암조건은 5.50±1.55%로 조사되어 형태적인 휴면과 생리적인 휴면을 모두 갖는 것으로 판단하였다. 애기똥풀의 생태적인 환경을 고려하여 12주의 Summer temperature(S12, 25/15℃, 16/8h)로 층적하고 연속하여 Autumn temperature(A, 15/10℃, 16/8h)를 4주(A4)와 8주(A8)로 달리하여 종자의 휴면타파를 유도하였다. 층적 후 발아율은 모두 증가되었으며, S12-A4(54%)는 S12-A8(24.5%)에 비해서 휴면타파에 효과적이었다. 휴면타파 효과의 증진을 위해 층적처리한 종자를 500ppm의 GA₃와 GA₄₊₇에 각 24시간동안 4℃에서 침지시킨 뒤 동일한 조건에 파종하였다. GA₃가 처리된 S12-A4는 발아율이 82.0%, S12-A8는 30.8%로 유의적으로 증가하였으나 GA₄₊₇ 처리는 S12-A4(48.5%)와 S12-A8(21.3%)에서 발아율 향상 효과가 없었다. 결론적으로 애기똥풀의 휴면타파를 위해서 12주의 Summer temperature와 4주의 Autumn temperature 변온층적과 추가 GA₃ 처리가 휴면타파를 위한 효과적인 처리방법으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.44-48
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• 1997

The nanocrystalline Nd-Fe-B alloys with low Nd content were prepared by rapid solidification technique. The alloys consist of both$\alpha$-Fe as the main phase and $Nd_2Fe_{14}B_1$ as a secondary phase and have an ultrafine grain structure of about 30 nm. The addition of Ga in $Nd_4Fe_{82}B_{10}Mo_3Cu_1$ alloy increases remanence up to 1.29 T and improves squareness. The nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy has a volume fraction of $Nd_2Fe_{14}B_1$ phase of around 35% due to the increase of Nd content and shows an improved coercivity. The remanence, coercivity and energy product of optimally annealed nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy are 1.24 T, 257.4 kA/m (3.23 kOe), and 100.3 kJ/ ㎥ (12.6 MGOe), respectively.

• Journal of Applied Biological Chemistry
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• v.53 no.3
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• pp.147-153
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• 2010

$\beta$-glycyrrhetinic acid (GA), the active principle of licorice (Glycyrrhiza glabra L.) has been reported to exhibit anti-inflammatory properties in different animal models. In this study, the effects of GA on the production of inflammatory mediators including tumor necrosis factor (TNF)-$\alpha$, interleukin (IL)-6, nitric oxide (NO), and prostaglandin E (pGE)-2 were examined in RAW 264.7 cells in vitro. Furthermore, to elucidate a possible mechanism for the inhibitory effect of GA on the production of TNF-$\alpha$, it was investigated whether the treatment of GA affects the I-${\kappa}B{\alpha}$ degradation and subsequent nuclear translocation of NF-${\kappa}B$. Various inflammatory responses were induced in the culture system by treating with a lipopolysaccharide (LPS). GA showed anti-inflammatory activities in dose-dependant manner with $IC_{50}$ of $5.4{\mu}M$ by inhibiting the production of TNF-$\alpha$ in RAW 264.7 cells. In addition, the treatment of GA blocked both I-${\kappa}B{\alpha}$ degradation and the nuclear translocation of NF-${\kappa}B$ from cytosol to nucleus. However, it did not affect the production of IL-6, NO, and PGE-2, implying the direct blocking of the production of TNF-$\alpha$ resulting from both the I-${\kappa}B{\alpha}$ degradation and the nuclear translocation of NF-${\kappa}B$. This finding might provide the underlying mechanism to explain the reported anti-inflammatory activities of GA in animal models.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.944-950
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• 1993

Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

• ETRI Journal
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• v.38 no.1
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.