• Journal of Electrical Engineering and information Science
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• v.3 no.1
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• pp.110-116
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• 1998

A single-crystalline epitaxial film of GaAs has been grown on Si using a gs assisted-ionized vapour beam eptaxial technique. The native oxide layer on the silicon substrate was removed at 550$^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550$^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is able demonstrated through fabrication of GaAs MODFET on Si substrates.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.110-110
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• 2003

LED의 품위가 높아지고 고 광방출을 위한 전기적 출력이 높아질수록 LED 자체에서 발생하는 열이 아주 중요한 요소로 제출되고 있다. 본 실험에서는 여러 가지 LED 모델의 열적특성을 분석하여 가장 최적화된 모델을 생성하려고 한다 실험방법은 유한요소법을 사용하는 소프트웨어 ANSYS를 이용하여 여러 가지 LED 모델을 생성하고 입력조건과 경계조건을 집어넣고 해석한 후 결과를 분석하여 각종 모델의 최고 온도를 알 수 있다 그 다음 여러 가지 모델의 최고 온도를 비교하여 가장 최적화된 LED모델을 발견하고 또한 열적으로 영향 주는 요소들을 도출 해낼 수 있다. 이러한 분석은 금후 고휘도 LED램프생산성에 중요한 기반기술로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.143-147
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• 2001

Ferromagnetism in manganese compound semiconductors open prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds. Also it addresses a question about the origin of the magnetic interactions that lead to a Curie temperature(Tc) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally suggested for transition metals in 1950, can explain Tc of $Ga_{1-x}Mn_x$ As and that of its IT-VI counterpart $Zn_{1-x}Mn_x$ Te and is used to predict materials with Tc exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. In this article, we present not only the experimental result but calculated Curie temperature by RKKY interaction. The problem in making III-V semiconductor has been the low solubility of magnetic elements, such as manganese, in the compound, since the magnetic effects are roughly proportional to the concentration of the magnetic ions. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium MBE{molecular beam epitaxy) growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 K for a small manganese concentration.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.687-694
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• 1994

Heteroepitaxial InP/GaAs layers were grown using the selective liquid phase epitaxy (SLPE) technique. It was observed that the optimum LPE conditions were $660^{\circ}C$ growth temperature, $5^{\circ}C$ supercooling, and $0.4^{\circ}C$/min cooling rate. Maximum expitaxial layer overgrowth (ELO) of 110-160$\mu \textrm{m}$ was obtained when the seed was aligned along (112) orientation. Initial melt-back of the substrate was observed but limited to the seed region so that flat In-Ga-As-P layers were grpwn throughout the GaAs substrates. The InP/GaAs heteroepitaxial structure could be obtained by growing an additional InP layer on top of the In-Ga-As-P layer.

• Journal of the Korean Institute of Intelligent Systems
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• v.15 no.1
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• pp.110-115
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• 2005

This paper proposes the method to detect contours of a face, eyes and a mouth in a color image for making an avatar automatically. First, we use the HSI color model to exclude the effect of various light condition, and we find skin regions in an input image by using the skin color is defined on HS-plane. And then, we use deformable templates and Genetic Algorithm(GA) to detect contours of a face, eyes and a mouth. Deformable templates consist of B-spline curves and control point vectors. Those can represent various shape of a face, eyes and a mouth. And GA is very useful search procedure based on the mechanics of natural selection and natural genetics. Second, an avatar is created automatically by using contours and Fuzzy C-means clustering(FCM). FCM is used to reduce the number of face color As a result, we could create avatars like handmade caricatures which can represent the user's identity, differing from ones generated by the existing methods.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.114-114
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.120-121
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• 2013

• 한국가스학회:학술대회논문집
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• 2003.05a
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• pp.105-110
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.110-111
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• 2012

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.237-242
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• 2006

Nowadays, LEDs has been applied to the luminescent devices of various fields because of the invention of high efficient blue chip. Recently, especially, the white LEDs composed of InGaN blue chips and a yellow phosphor (YAG:Ce3+) have been investigated extensively. With the exception of YAG:Ce3+ phosphor, however, there are no reports on yellow phosphor that has significant emission in the 450~470 nm excitation range and this LED system is the rather low color rendering index due to their using two wavelength. Hence, we have attempted to synthesize thiogallate phosphors that efficiently under the long wavelength excitation range in the present case. Among those phosphors, we have synthesized Sr2Ga2S5:Eu2+ phosphor by change the host material of SrGa2S4:Eu2+ which is well known phosphor and we investigated the luminescent properties. In order to obtain the harmlessness and simplification of the synthesis process, sulfide materials and mixture gas of 5 % H2/95 % N2 were used instead of the CS2 or H2S gas. The prepared phosphor shows the yellow color peaking at the 550 nm wavelength and it possible to emit efficiently under the broad excitation band in the range of 300~500 nm. And this phosphor shows high luminescent intensity more than 110 % in comparison with commercial YAG:Ce3+ phosphor and it can be applied for UV LED due to excitation property in UV region.