• Title/Summary/Keyword: G-power

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Full Bridge Converter with Multiple Output (다출력 구조의 풀 브릿지 컨버터)

  • Cho, J.M.;Ryu, M.H.;Kim, J.H.;Baek, J.W.;Kim, H.G.
    • Proceedings of the KIPE Conference
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    • 2008.06a
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    • pp.360-362
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    • 2008
  • In this paper, an improved full bridge inverter is presented to get multiple output for UV lamp and barrier discharge. It has a structure of two equivalent half bridge inverters and one full bridge inverter. The outputs of the proposed circuit can be controlled using frequency and PWM independently. To verify the proposed circuit, theoretical analysis and experimental results has been done using a prototype power supply.

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A Design of $H_{\infty}$ Controller for the Stabilization of A.C. -D.C. Power Systems (교류-직류 계통의 안정화를 위한 $H_{\infty}$제어기 설계)

  • Han, G.M.;Lee, J.P.;Chung, H.H.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 2000.07a
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    • pp.224-226
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    • 2000
  • In this paper, a robust $H_{\infty}$ controller, based on the Riccati equation approach, is proposed for HVDC power system with parametric uncertainties. Bounds of power system parametric uncertainties are included in Riccati equation to improve the robustness of controller. The proposed $H_{\infty}$ controller for the stabilization of HVDC power system can ensure that the overall system is asymptotically stable for all admissible uncertainties. Simulation results show that the proposed $H_{\infty}$ controller can achieve good performance in presence of uncertainties of power system.

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A Study on the amount of compensators at the KEPCO system in a middle-long term point of view (한전계통에서 중장기 조상설비 소요량 산정에 관한 연구)

  • Kim, H.P.;Hur, Y.;Choi, J.M.;Kim, S.G.;Lee, H.Y.
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.187-189
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    • 2006
  • Compensators need to keep the voltage properly at the KEPCO system in a ruddle-long term point of view. Therefore, it is necessary to forecast the amount of compensators. In this paper, we analyze how much compensators are needed and what kind of effects is given on the KEPCO system in a middle-long term point of view. In addition, this analysis is based on the books named "The plan of Transmission and Substation at the KEPCO in 2005" and we used PSS/E program when we analyze the KEPCO system.

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EMTP Simulation study for flashover phenomenon due to lighting in EHV transmission line (EMTP를 이용한 초고압 송전선로의 뇌격에 의한 섬락현상 모의계산)

  • Kwak, J.S.;Woo, J.W.;Jo, S.J.;Kim, W.G.;Kim, I.S.
    • Proceedings of the KIEE Conference
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    • 2005.07a
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    • pp.661-663
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    • 2005
  • 본 논문에서는 2회선 초고압 송전선로의 4.5 km 이격한 서로 다른 송전철탑에서 발생한 섬락사고의 원인을 규명하기 위한 연구결과를 소개하고자 한다. 섬락사고는 낙뢰가 원인을 제공한 것으로 추정되었으며 2회선중 각각 1개 상의 섬락고장을 동시에 유발하였다. 뇌고장은 낙뢰의 송전선 침입 위치에 따라 역섬락과 차폐실폐 고장으로 분류하고 각기 다른 대책을 적용한다. 연구에서는 고장유발 낙뢰의 크기를 모의계산을 통하여 추정하고 낙뢰에 의한 섬락 형태를 밝히고자 하였다.

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A Study on Fabrications of GaAs Power MESFETs with an Undoped Surface Layer (Undoped 표면층을 갖는 전력용 GaAs ,ESFET의 제작에 관한 연구)

  • 김상명;이일형;신석현;서진호;서광석;이진구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.1
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    • pp.65-70
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    • 1994
  • GaAs power MESFETs with 0.8$\mu$m gate lengths are fabricated using image reversal (IR) methods on the wafer with an undoped surface layer grown by MOCVD. The fabricated GaAs power MESFETs with an undoped surface layer show that an ideality factor 1.17, a built-in potential 0.83 V, a pinch-off voltage -2.7 V, a specfic contact resistance 1.21$\times$10$^{5}$ ~3.42$\times$10$^{2}$$\Omega$-cm$^{2}$ and an extrinsic g$_{m}$ = 103.5 mS/mm. The maximum RF output power densities of the 0.8$\mu$m devices are 360 mW/mm and 499 mW/mm, and power added efficiencies 29.67% and 29.05%, for the unit gate width 150$\mu$m and 200$\mu$m at 12 GHz.

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Design of Low Power OLED Driving Circuit (저소비 전력 OLED 디스플레이 구동 회로 설계)

  • 신홍재;이재선;최성욱;곽계달
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.919-922
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    • 2003
  • This paper presents a novel low power driving circuit for passive matrix organic lighting emitting diodes (OLED) displays. The proposed driving method for a low power OLED driving circuit which reduce large parasitic capacitance in OLED panel only use current driving method, instead of mixed mode driving method which uses voltage pre-charge technique. The driving circuit is implemented to one chip using 0.35${\mu}{\textrm}{m}$ CMOS process with 18V high voltage devices and it is applicable to 96(R.G.B)X64, 65K color OLED displays for mobile phone application. The maximum switching power dissipation of driving power dissipation is 5.7mW and it is 4% of that of the conventional driving circuit.

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Applicability of Plate Heat Exchanger to Plant Cooling Water Systems in Pressure Water Reactor (원자력발전소 기기냉각수계통의 판형열교환기 적용성)

  • Lim, Hyuk-Soon
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.505-510
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    • 2001
  • Advanced Pressurized Reactor 1400(APR1400), which is a standard evolutionary advanced light water reactor(ALWR), has been developed from 1992 as one of long-term Government Project(G-7). The APR-1400 is designed to operate at the rated output of 4000MWt to produce an electric power output of around 1450MWe. Due to the increased electric power, In Nuclear Power plant huge quantities of heat are generated in the thermo-dynamic process used for producing electrical energy. So, There is considerationly additional cooling, Heat transfer area and increased cooling water of Heat Exchanger which take care of the different smaller cooling duties within the nuclear power plant. We review applying to PRE instead of Shell-and-Tube Heat exchanger. In this paper, we describe the major design features of PRE, Comparison between a PHE and a Shell-and-Tube Heat Exchanger, and then Applicability of Plate Heat Exchanger in Nuclear Power Plant Component Cooling water systems.

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The Study of Power Conditioning System for Photovoltaic Power Generation System (태양광 발전용 전력변환장치에 관한 연구)

  • Ryu S.P.;Jeon S.B.;Min B.G.;Seo K.D.
    • Proceedings of the KIPE Conference
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    • 2003.07b
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    • pp.961-964
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    • 2003
  • Recently, because of the depletion of fossil fuels and the environmental pollution by using fossil fuels and atomic power generation, the interests concerning of new and renewable energy resources are rising rapidly. In this study, the 3kWP photovoltaic power generation system is realized to verify the performance of the PCS developed. The photovoltaic array used in this system is composed of 60 modules of 50Wp capacity. The developed system is tested and the experimental results show the excellent electrical characteristics.

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High Power Factor High Efficiency PFC AC/DC Converter for LCD Monitor Adapter (LCD 모니터의 어댑터를 위한 고역률 고효율 PFC AC/DC 컨버터)

  • Park K. H.;Kim C. E.;Youn M. J.;Moon G. W.
    • Proceedings of the KIPE Conference
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    • 2003.11a
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    • pp.85-89
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    • 2003
  • Many single-stage PFC(power-facto.-correction) ACHC converters suffer from the high link voltage at high input voltage and light load condition. In this paper, to suppress the link voltage, a novel high power factor high efficiency PFC AC/DC converter is proposed using the single controller which generates two gate signals so that one of them is used far gate signal of the flyback DC/DC converter switch and the other is applied to the Boost PFC stage. A 130w prototype for LCD monitor adapter with universal input $(90-265V_{rms})$ and 19.5V 6.7A output is implemented to verify the operational principles and performances. The experimental results show that the maximum link voltage stress is about 450V at 270Vac input voltage. Moreover, efficiency and power factor are over $84\%$ and 0.95, respectively, under the full load condition.

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TFTs characteristics of amorphous IGZO thin film fabricated with different RF Power (다양한 RF Power로 제작한 비정질 IGZO TFTs의 특성 연구)

  • Jeong, Yeon-Hu;Jo, Gwang-Min;Kim, Se-Yun;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.254-255
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    • 2014
  • RF magnetron sputtering법으로 증착한 비정질 IGZO 박막과 이를 Active layer로 이용한 TFT의 Transfer 특성에 대한 RF Power의 영향에 대해 연구하였다. Carrier concentration은 Sputtering 공정 중에 산소 분압으로 조절하였다. RF Power가 75에서 150W로 증가할수록 IGZO 박막의 Roughness는 12.2에서 $6.5{\AA}$ 감소하였고 Density는 6.0에서 $6.1g/cm^3$로 증가하였다. 또한, 모든 IGZO 박막은 가시광 영역에서 85% 이상의 투과율을 보였고 Optical band gap은 미세하게 감소하였다. RF Power가 증가할수록 a-IGZO TFT의 Threshold voltage는 0.9에서 7V로 증가하였고, Subthreshold slope은 0.3에서 0.8 V/decade로 증가하였다. 하지만 Mobility는 11에서 $19cm^2/V{\cdot}s$로 증가하였다.

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