• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.439-443
• /
• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.454-457
• /
• 1987

Formation of the titanium silicides was performed by the furnace annealing. Ti-silicide was formed by reacting Ti films with singlecrystalline silicon in vacuum or nitrogen ambient in the temperature range $500{\sim}900^{\circ}C$. The Ti-Si interaction in such films was investigated by using X-ray diffraction, and sheet resistance measurements. It was found that the dorminant crystal phase of silicide formed during annealing at $600{\sim}700^{\circ}C$ was TiSi, and $TiSi_2$ phase is associated with a very low sheet resistance(<$2{\Omega}/{\Box}$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.289-300
• /
• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.2
• /
• pp.97-100
• /
• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.326-329
• /
• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.299-306
• /
• 1998

Crystallization of the amorphous silicon needs activation. Thermal energy through laser annealing, furnace annealing and rapid thermal process (RTP) has been convinced to crystallize the amorphous silicon thin film. It is expected that some other type of energy like mechanical energy can help to crystallize the amorphous silicon thin film. In this study, mechanical energy through wet blasting of silica slurry and silicon ion implantation has been applied to the amorphous silicon thin film deposited with LPCVD technique. RTP was employed for the annealing of this mechanically-damaged amorphous silicon thin film. For the characterization of the crystallized silicon thin film, XRD and Raman analysis were conducted. In this study, it is shown that the mechanical damage is effective to enhance the crystallization of amorphous silicon thin film.

• Corrosion Science and Technology
• /
• v.7 no.1
• /
• pp.1-5
• /
• 2008

The gas atmosphere in continuous annealing and galvanizing lines alters both composition and microstructure of the surface and sub-surface of sheet steel. The formation and morphology of the oxides of alloying elements in High Strength Interstitial Free (HS-IF), Dual Phase (DP) and Transformation-Induced Plasticity (TRIP) steels are strongly influenced by the furnace dew point, and the presence of specific oxide may result in surface defects and bare areas on galvanized sheet products. The present contribution reviews the progress made recently in understanding the selective formation of surface and subsurface oxides during annealing in hot dip galvanizing and conventional continuous annealing lines. It is believed that the surface and sub-surface composition and microstructure have a pronounced influence on galvanized sheet product surface quality. In the present study, it is shown that the understanding of the relevant phenomena requires a combination of precise laboratory-scale simulations of the relevant technological processes and the use of advanced surface analytical tools.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.358-360
• /
• 2007

For large scaled solar cells and photosensors CdS thin films of $2{\mu}m$ thickness have deposited on ITO glass substrate by chemical bath deposition methode in $300^{\circ}C$ electric furnace. The surface roughness and resistance of cadmium sulphide(CdS) thin films with different microstructures and morphologies was investigated by using a x-ray diffraction (XRD), a scanning electron microscope (SEM), an atomic force microscope (AFM), and a near-field scanning microwave microscope (NFMM). As the different substrate heat temperatures, the microwave reflection coefficient $S_{11}$ and intensity of the (002) diffraction peak was changed, and the surface morphology also has shown differently.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.6
• /
• pp.468-472
• /
• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• Korean Journal of Materials Research
• /
• v.33 no.11
• /
• pp.482-490
• /
• 2023

The purpose of this study was to analyze microstructural changes and evaluate the mechanical properties of TWIP steel subjected to variations in heat treatment, in order to identify optimal process conditions for enhancing the performance of TWIP steel. For this purpose, a homogenization heat treatment was conducted at 1,200 ℃ for 2 h, followed by hot rolling at temperature exceeding 1,100 ℃ and cold rolling. Annealing heat treatment is achieved using a muffle furnace in the range of 600 ℃ to 1,000 ℃. The microstructure characterization was performed with an optical microscope and X-ray diffraction. Mechanical properties are evaluated using micro Vickers hardness, tensile test, and ECO index (UTS × Elongation). The specimens annealed at 900 ℃ and 1,000 ℃ experienced a significant decrease in hardness and strength due to decarburization. Consequently, the decarburization phenomenon is closely related to the heat treatment process and mechanical properties of TWIP steel, and the effect of the microstructure change during annealing heat treatment.