• Title/Summary/Keyword: Fundamental constants

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The Embedded Atom Method Analysis of the Nickel (Nickel의 Embedded Atom Method 해석)

  • 정영관;김경훈;이근진;김종수
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.572-575
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    • 1997
  • The embedded atom method based on density functional theory was developed as a new means for calculating ground state properties of realistic metal system by Murray S. Daw, Stephen M. Foiles and Michael I. Baskes. In the paper, we had corrected constitutive formulae and parameters on the nickel for the purpose of doing Embedded Atom Method analysis. And then we have computed the properties of the nickel on the fundamental scale of the atomic structure. In result, simulated ground state properties, such as the lattice constant, elastics constants and sublimation energy, show good agreement with Daw's simulation data and with experimental data.

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Study of Kinetics of Bromophenol Blue Fading in Alcohol-Water Binary Mixtures by SESMORTAC Model

  • Samiey, Babak;Alizadeh, Kamal;Mousavi, Mir Fazlolah;Alizadeh, Nader
    • Bulletin of the Korean Chemical Society
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    • v.26 no.3
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    • pp.384-392
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    • 2005
  • Solvent effects on the kinetics of bromophenol blue fading have been investigated within a temperature range in binary mixtures of methanol, ethanol, 1-propanol, ethylene glycol and 1,2-propanediol with water of varying solvent compositions up to 40% by weight of organic solvent component. Correlation of logk with reciprocal of the dielectric constant was linear. Finally a mechanism was proposed for the bromophenol blue fading upon SESMORTAC (study of effect of solvent mixture on the one-step reaction rates using the transition state theory and cage effect) model, by means of this model, the fundamental rate constants of the fading reaction in these solvent systems were calculated.

Quantum Theory of Amplified Total Internal Reflection by Evanescent Wave (에바네슨트파에 의해 증폭된 전반사의 양자이론)

  • Lee, Chang-Woo;Jaewoo Nho;Wonho Jhe
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.156-157
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    • 2000
  • The amplification method using evanescent wave coupling has a long history and has been widely used as a new lasing method, especially, in the waveguide optics$^{(1)}$ . In particular, it has been observed experimentally that when the light wave propagating in a dielectric medium is totally reflected at the planar interface between the dielectric and a pumped active medium, the reflectance may be greater than unity, i.e., amplification is possible$^{(2)}$ . There were several attempts by other authors to explain this enhanced internal reflection (EIR) classically$^{(3)}$ . They commonly introduced a complex refractive index for the active medium with its imaginary part being negative, and this scheme was also used to describe an amplification process in a waveguide having active-cladding region$^{(4)}$ . However these theories are phenomenological, using macroscopic constants, and therefore a microscopic theory is needed to understand EIR in a fundamental level. (omitted)

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A Study on Measuring Technique of Electromagnetic Wave Absorbing Characteristics of Microwave Absorbers (전파흡수체의 전파흡수특성측정기법에 관한 연구)

  • 김동일;안영섭;정세모
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 1992.10a
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    • pp.2-29
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    • 1992
  • According to the increase of occupation density of microwave frequency band on use microwave environments have been congested extensively. For shielding unnecessary electromagnetic wave of preventing the electromagnetic wave reflection a good conductor a low resistive material or a lossy material is mainly used. As a method to measure the absorbing characteristics of microwave absorber the fundamental microwave measuring method can be used. There is however a big problem in measuring errors since the wavelength of microwave is very short especially as in the case as microwave absorber for RADAR. Therefore this research aimed to a converting adaptor of 20mm${\Phi}$ coaxial tube from a Type-N connector to 20mm${\Phi}$ coaxial tube and to use it for designing microwave absorber and evaluating absorbing characteristics. Furthermore the measurements of absorbing characteristics and material constants have performed and reviewed which were carried out by using the coaxial tube in the short type and by using rectangular waveguide respectively As a result the validity of the measured values have been confirmed.

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Development of a New On-line fiber Orientation Sensor Based on Dielectric Anisotropy

  • Nagata, Shinichi
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.34 no.5
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    • pp.49-55
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    • 2002
  • A new method is proposed for the on-line measurement of the fiber orientation of sheet materials. The measurement of fiber orientation is very important in manufacturing paper sheets, non-woven fabrics, and glass sheets, because fiber orientation strongly affects product properties represented by, for example, dimensional stability of paper. A method developed in this research utilizes anisotropy of dielectric constants of sheet materials as a key characteristic to determine the fiber orientation. The new on-line sensor, consisting of 5 microwave dielectric resonators set in different directions, was designed to detect the fiber orientation while paper is running with high speed on a paper machine. This sensor can determine the direction and the degree of fiber orientation from the measured direction of the maximal dielectric constant and its variation, respectively. The fundamental performance of this system was examined by the static measurement of printing grade paper, which gave a satisfactory result. Then, the dynamic measurements were done at a speed of 1,000 m/min by using a high-speed test-coating machine.

Transparent Capacitor of the $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMNO)-Bi Nanostructured Thin Films grown at Room Temperature

  • Song, Hyeon-A;Na, Sin-Hye;Jeong, Hyeon-Jun;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.2-20.2
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    • 2011
  • BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

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Photoluminescence Properties of $CdGaInS_{4}:Er^{3+}$ Single Crystal ($CdGaInS_{4}:Er^{3+}$ 단결정의 광발광 특성)

  • Choe, Sung-Hyu;Kim, Yo-Wan;Kang, Jong-Wook;Lee, Bong-Ju;Bang, Tae-Hwan;Hyun, Seung-Cheol;Kim, Nam-Oh;Kim, Hyung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.97-100
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    • 2002
  • $CdGaInS_{4}:Er^{3+}$ single crystal crystallized in the rhombohedral. with lattice constants a = 3.899 $\AA$ and c = 36.970 $\AA$ for $CdGaInS_{4}:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of this compound had a direct and indirect band gaps. the direct and indirect energy gaps are found to be 2.665 and 2.479eV for $CdGaInS_{4}:Er^{3+}$ at 10 K. The photoluminescence spectra of $CdGaInS_{4}:Er^{3+}$ measured in the wavelength ranges of 500 nm~900 nm and 1500~1600 nm at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of 549.5~560.0nm. 661.3~676.5nm. 811.1~ 834.1 nm and 1528.2~1556.0 nm in $CdGaInS_{4}:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$ symmetry of the $CdGaInS_4$ single crystals host lattice.

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Optical Properties of Cdlnsub 2Ssub 4 and Cdlnsub 2Ssub 4 : $CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$Single Crystals ($CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$ 단결정의 광학적 특성)

  • Choe, Seong-Hyu;Bang, Tae-Hwan;Kim, Hyeong-Gon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.296-302
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    • 1999
  • $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

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Fundamental Study on Solvent Sublation Using Salphen and Its Application for Separative Determination of Trace Ni(II), Co(II) and Cu(II) in Water Samples

  • Kim, Young-Sang;In, Gyo;Kim, Mi-Hyun;Choi, Jong-Moon
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1757-1762
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    • 2006
  • A solvent sublation using salphen as a ligand was studied and applied for the determination of trace Ni(II), Co(II) and Cu(II) in water samples. The fundamental study was investigated by a solvent extraction process because the solvent sublation was done by extracting the floated analytes into an organic solvent from the aqueous solution. The salphen complexes of Ni(II), Co(II) and Cu(II) ions were formed in an alkaline solution of more than pH 8 and then they were extracted into m-xylene. It was known that the each metallic ion formed 1 : 1 complex with the salphen and the logarithmic values of extraction constants for the complexes were 3.3 5.1 as an average value. Based on the preliminary study, the procedure was fixed for the separation and concentration of the analytes in samples. Various conditions such as the pH of solutions, the influence of $NaClO_4$, the bubbling rate and time of $N_2$ gas, and the type of organic solvent were optimized. The metal-salphen complexes could be extracted into m-xylene from the solution of more than pH 8, but the pH could be shifted to acidic solution of pH 6 by the addition of $NaClO_4$. In addition, the solvent sublation efficiency of the analytes was increased by adding $NaClO_4$. The recovery of 97-115% was obtained in the spiked samples in which given amounts of 0.3 mg/L Ni(II), 0.8 mg/L Co(II) and 0.04 mg/L Cu(II) were added.

Surface elasticity and residual stress effect on the elastic field of a nanoscale elastic layer

  • Intarit, P.;Senjuntichai, T.;Rungamornrat, J.;Rajapakse, R.K.N.D.
    • Interaction and multiscale mechanics
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    • v.4 no.2
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    • pp.85-105
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    • 2011
  • The influence of surface elasticity and surface residual stress on the elastic field of an isotropic nanoscale elastic layer of finite thickness bonded to a rigid material base is considered by employing the Gurtin-Murdoch continuum theory of elastic material surfaces. The fundamental solutions corresponding to buried vertical and horizontal line loads are obtained by using Fourier integral transform techniques. Selected numerical results are presented for the cases of a finite elastic layer and a semi-infinite elastic medium to portray the influence of surface elasticity and residual surface stress on the bulk stress field. It is found that the bulk stress field depends significantly on both surface elastic constants and residual surface stress. The consideration of out-of-plane terms of the surface stress yields significantly different solutions compared to previous studies. The solutions presented in this study can be used to examine a variety of practical problems involving nanoscale/soft material systems and to develop boundary integral equations methods for such systems.