• 한국건축시공학회지
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• 제10권1호
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• pp.199-212
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• 2010

국내 건설산업에 있어서 기술과 정보의 기반구조를 확립하기 위하여 몇몇 건설정보관련 법규가 제도화되었다. 그러나 국내 건설정보 분류체계, 공정 공사비 통합관리(EVM), 프로젝트관리 정보시스템(PMIS)은 주요한 문제점을 내포하고 있다. 특히 현행 PMIS의 기능은 시공자 위주의 시스템으로 되어 있고, EVM이 적용되지 않아 발주자를 위한 보고, 분석, 예측기능이 매우 취약하다. 더욱이 EVM과 PMIS가 서로 분리된 체계로 운영되고 있어 발주자가 실시간으로 공정 및 공사비 정보를 확인할 수 없다. 본 연구의 목적은 PMIS가 EVM기능을 제공하고 사업참여자들이 제반정보를 공유할 수 있도록 WBS 구축방안과 EVM - PMIS 통합모델을 제안하여, E-비즈니스 업무환경하에서 PMIS를 효율적으로 운용할 수 있는 틀(framework)을 제공하는 것이다. EVM - PMIS 통합의 핵심은 EVM과 PMIS가 액티비티 기반의 동일한 운영체계를 갖는 것이다. 통합의 원리는 액티비티의 정보항목(field)을 PMIS의 공정 및 공사비관리 기능을 위한 하위모듈을 구성하는 관계형 데이터베이스 테이블(table)의 항목과 연계시키는 것이다. 따라서 액티비티의 계획공사비(PA), 달성공사비(EV), 실투입비(AC), 공정편차(SV), 공정수행지수(SPI), 공사비편차(CV), 공사비지출지수(CPI)는 PMIS의 공정 및 공사비 하위모듈을 위한 데이터베이스 테이블의 항목으로 연계된다.

• 시스템엔지니어링학술지
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• 제5권1호
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• pp.49-56
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• 2009

This research attempts to acquire technical performance measure information based on identifying the Critical To Quality(CTQ) parameters of user requirement by using Quality Function Deployment(QFD) methodology in the initial phase of a defense R&D project. This results will contribute to the integration of technical progress to the Work Breakdown Structure(WBS) based project performance tracking. It also improve the bridging of systems engineering activities to the project management and the project decision making process.

• 한국경영과학회지
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• 제15권1호
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• pp.47-61
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• 1990

The purpose of this study is to construct a new model named Communication Consensus Value Weighted (CCVW) model based on inter-personal technical communication within a project team, and to design Feasibility Estimates Integrated Terminal System (FEITS) which is a subsystem of R & D Project Planning System/System Alternatives Feasibility Estimation System (RDPPL/SAFES) using the model as a key function for feasibility estimation in that system. This new model aims to integrate technical feasibility estimated by several estimators in the lowest level as the project work breakdown structure which is the indentical conception of a terminal system in RDPPL. The process to obtain the feasibility estimate integrated is presented in this paper.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.83-88
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• 2003

증착온도와 어닐링 조건에 따른 반도체-원자 초격자 구조의 광전자특성이 연구되었다. 나노결정의 Si-O 초격자 구조는 MBE 시스템에 의해 형성되었다. 다층의 Si-O 초격자 다이오드는 매우 안정한 포토루미네슨스 특성과 높은 브레이크다운 전압을 갖는 양호한 절연 특성을 나타내었다. 이러한 결과는 미래의 초고속 및 저전력 CMOS 소자에서 SOI 구조의 대체 방안으로 사용될 수 있을 뿐만 아니라, 실리콘계 광전자 소자 및 양자 전자 소자에도 응용될 수 있을 것이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1961-1962
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• 2008

Hybrid Peer-to-Peer structure is sharing resource in each peer, but various resource that is with go peer indexing and segment that search from attained in server who function is solidified that is not attained in peer itself be. Basis algorithm was based on Ethernet protocol and administration of each peer enabled in center server and peer does as can confirm breakdown existence and nonexistence through communication with center server and the internet through this directly expensive test expense and a lot of test times of existing test method of access method necessary problem effectively improve.

• 시스템엔지니어링학술지
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• 제18권1호
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• pp.99-104
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• 2022

In this paper, to increase the maintenance efficiency of the urban railway train control system and to build a standard data system, we collect as much as possible structured, unstructured, and semi-structured data, and collect data by sensing and monitoring the system status and system status and monitoring. pre-process function data(Identification, purification, integration, transformation) through effective data classification and maintenance activities business classification system was studied. The purpose of this is to define the data matrix model by considering the relationship with the data generated and managed in the O&M stage of the train control system operated by the urban railway together with the WBS model, and to reflect and utilize it in practice.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 한국위성정보통신학회논문지
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• 제10권4호
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• pp.6-11
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• 2015

PPS 소자가 삽입된 N형 실리콘 제어 정류기(NSCR_PPS)소자에서 게이트와 $N^+$ 확산층 간격(Gate to Primary $N^+$ diffusion Space; GPNS)의 변화가 정전기 보호 성능에 미치는 영향을 연구하였다. FPW 구조와 CPS 이온주입을 행하지 않은 구조를 갖는 종래의 NSCR 표준소자는 on 저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 마이크로칩의 정전기보호소자로 적용이 어려웠다. 그러나 본 연구에서 제안하는 PPW 구조와 CPS 이온주입을 동시에 적용하여 변형설계된 소자에서는 GPNS의 변화가 정전기 보호성능의 향상에 영향을 주는 중요한 파라미터였으며, 정전기보호소자의 설계창을 만족시키는 향상된 정전기보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.223-229
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• 2017

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (${\Phi}$), with the metal of higher ${\Phi}$ in the source-side gate, and the metal of lower ${\Phi}$ in the drain-side gate. As a result of the different ${\Phi}$ values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.