• 성인간호학회지
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• 제19권3호
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• pp.470-482
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• 2007

Purpose: This study aimed to describe the experience of family breakdown of Hwabyung patients in a socio-cultural context. Methods: Data for this study came from 5 participants, 2 family members and 1 friend of participant by interviews and participant observations from January 2006 to April 2007. Sociology of everyday lives analyzing method were adopted. Results: There were two processes of family breakdown ; sudden on set and progressive processes. The sudden breakdown was unpredictable death of a husband, the significant family member. On the other hand, their family structure and function were broken down through the husband, who repeatedly destructive and malicious behaviors. The experience of family breakdown of middle-aged women with Hwabyung in a socio-cultural context was weakened or severed family-relationships, exhaustion of economic sources, and the breakdown of participant's body. Participant's experience of family breakdown were influenced by Korean culture, the patriarchal social system and the clan-centered family system. Conclusion: Hwabyung is the result of a clan-centered family system and patriarchal system. The approach to Hwabyung should involve not only the person with the illness but also their family.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.671-676
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• 2012

In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1503-1506
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/EPDM laminates in cable joint. In this paper, we instituted the interface of normal and degassed XLPE/EPDM and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction and breakdown strength was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And micro voids and surface roughness also influenced the conduction current and breakdown strength.

• 한국진공학회지
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• 제8권1호
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• pp.36-42
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• 1999

이온빔 스퍼터링 방법으로 n-type si 기판에 고팅된, 수소를 함유하지 않은 다이아몬드성 카본 필름의 전계 방출 특성을 조사하였다. 필름의 구조나 두께에 관계없이 전계 방출 전류는 양극과 시편의 표면사이에서 발생하는 electrical breakdown에 의해 현저히 증가하였으며, 이때의 effective work function은 약 0.1eV의 작은 값을 가지고 있었다. 텅스텐 tip을 이용하여 breakdown에 의해 발생한 시편표면의 손상수위 근처를 scanning 하면서 전계 방출 전류를 측정하여, 전계 방출이 일어나는 정확한 위치를 확인하였다. 전계 방출은 breakdown에 의해 발생한 표면 손상 부위의 모든 곳에서 균일하게 일어나는 것이 아니라 특정 부위에서 집중적으로 관찰되었다. Auger electron spectroscopy와 SEM을 이용한 분석을 통해 손상 부위 중 Si과 C의 화합물이 형성된 곳에서만 절계 방출이 일어나고 있음을 알 수 있었으며, 손상부위의 형상변화는 전계 방출의 충분조건이 아니었다. 본 연구의 결과는 breakdown에 의한 전기 방출 전류의 증가는 시편 표면의 형상 변화에 의한 전계증진의 효과보다는 표면에서 발생하는 화학적 결합의 변화에 기인하고 있음을 보여준다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.938-940
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• 1998

In order to improve insulating character and ability of insulating system of power apparatus, the interfacial and complex structure is widely used. However, the interface or complex structure of insulation materials is reported as a weak point which causes breakdown. As the interface of insulation system degrades its electrical property and eventually causes a failure, the datailed phenomenon analysis is reported. The object of this paper is to evaluate dielectric property of PET film with the interface. The $tan{\delta}$ increased with the existence of semiconducting layer and showed prominent decrease as a function of temperature. Also, the $tan{\delta}$ showed prominent increase as a function of frequency. The dielectric properties of interfacial were affected by the interface characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• 전자공학회논문지A
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• 제33A권6호
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• pp.136-143
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• 1996

A simple analytic model for the planar junctions with multiple foating field limiting rings(FLR) is presented which yields analytic expressions for the breakdown voltage and optimum ring spacings. the normalized potential of each ring is derived as a function of the normalized depletion width and the ring spacing. Based on the assumption that the breakdwon occurs simulataneously at cylindrical junctions of FLR structure where the peak sruface electric fields are equal, the optimum ring spacings are determined. The resutls are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI and with the experimental data reported. The normalized experessions allow a calculation of breakdown voltage and optimum spacing over a broad range of junction depth and background doping levels.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.379-381
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• 1997

The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion and from a sheath of wall charges which are essential to memory function of AC PDP. Furthermore, this layer should be transparent because the visible light must pass through the layer. In this paper, the dielectric breakdown strength and transparency of the dielectric layer on the discharge electrodes are studied. The variables in this test are the dielectric layer thickness, dielectric firing condition, gas pressure, species of gas and so on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.225-228
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/FPDM laminates in cable joint. In this parer, we instituted the interface of XLPE/EPDM laminates and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction current was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And conduction current of XLPE/Oil 12500cSt/EPDM was more stable than XLPE/Grease/EPDM from the long heat treatment time. AC breakdown strength of silicone oil itself from the heat treatment was changed during the 4∼12 hour heat treatment time.