• 제목/요약/키워드: Full Peak Efficiency

검색결과 71건 처리시간 0.024초

새로운 능동 클램핑방식을 이용한 연료전지용 DC-AC 인버터의 특성 (Characteristic of fuel Cell DC-AC Inverter Using New Active Clamping Method)

  • 김칠용;조만철;문상필;김영준;김홍삼
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2007년도 추계학술대회 논문집
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    • pp.337-340
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    • 2007
  • In the dissertation, a power conversion system for fuel cell is composed of a PWM inverter with LC filter in order to convert fuel cell voltage to a single phase 220[V], In addition, new insulated DC-DC converters are proposed in order that fuel cell voltage is boosted to 380[V]. In this paper, it requires smaller components than existing converters, which makes easy control. The proposed DC-DC converter controls output power by the adjustment of phase-shift width using switch S5 and S6 in the secondary switch, which provides 93-97[%] efficiency in the wide range of output voltage. Fuel cell simulator is implemented to show similar output characteristics to actual fuel cell. Appropriate dead time td enables soft switching to the range where the peak value of excitation current in a high frequency transformer is in accordance with current in the primary circuit. Moreover, appropriate setting to serial inductance La reduces communication loss arisen at light-load generator and serge voltage arisen at a secondary switch and serial diode. Finally, TMS320C31 board and EPLD using PWM switching technique to act a single phase full-bridge inverter which is planed to make alternating current suitable for household.

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감압화학증착법으로 성장된 실리콘-게르마늄 반도체 에피층에서 붕소의 이차원 도핑 특성 (Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition)

  • 심규환
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1301-1307
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    • 2004
  • Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

저토크리플 및 역률개선을 위한 수정된 단상 SRM 구동시스템 (Modified Single-Phase SRM Drive for Low Torque Ripple and Power Factor Improvement)

  • 안영주
    • Journal of Advanced Marine Engineering and Technology
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    • 제31권8호
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    • pp.975-982
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    • 2007
  • The single-phase switched reluctance motor(SRM) drive requires DC source which is generally supplied through a rectifier connected with a commercial source. The rectifier is consist of a diode full bridge and a filter circuit. Usually the filter circuit uses capacitor with large value capacitance to reduce ripple component of DC power. Although the peak torque ripple of SRM is small, the short charge and discharge current of the filter capacitor draws the low power factor and system efficiency. A modified single phase SRM drive system is presented in this paper, which includes drive circuit realizing reduction of torque ripple and improvement of power factor. In the proposed drive circuit, one switching part and diode which can separate the output of AC/DC rectifier from the filter capacitor is added. Also, a upper switch of drive circuit is exchanged a diode in order to reduce power switching device. Therefore the number of power switch device is not changed, two diodes are only added in the SRM drive. To verify the proposed system, some simulation and experimental results are presented.

In-plane seismic performance of masonry wall retrofitted with prestressed steel-bar truss

  • Hwang, Seung-Hyeon;Kim, Sanghee;Yang, Keun-Hyeok
    • Earthquakes and Structures
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    • 제19권6호
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    • pp.459-469
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    • 2020
  • An external prestressed steel-bar truss unit was developed as a new strengthening technology to enhance the seismic performance of an in-plane masonry wall structure while taking advantage of the benefits of a prestressed system. The presented method consists of six steel bars: two prestressed vertical bars to introduce a prestressing force on the masonry wall, two diagonal bars to resist shear deformation, and two horizontal bars to maintain the configuration. To evaluate the effects of this new technique, four full-scale specimens, including a control specimen, were tested under combined loadings that included constant-gravity axial loads and cyclic lateral loads. The experimental results were analyzed in terms of the shear strength, initial stiffness, dissipated energy, and strain history. The efficiency of the external prestressed steel-bar truss unit was validated. In particular, a retrofitted specimen with an axial load level of 0.024 exhibited a more stable post behavior and higher energy dissipation than a control specimen with an observed complete sliding failure. The four vertical bars of the adjacent retrofitting units created a virtual column, and their strain values did not change until they reached the peak shear strength. The shear capacity of the masonry wall structure with external prestressed steel-bar truss units could be predicted using the model suggested by Yang et al.

(TCTA/TCTA1/3TAZ2/3/TAZ) : Ir(ppy)3 발광층을 이용한 고효율 녹색 인광소자 (High Efficiency Green Phosphorescent Organic Light Emitting Devices using the Emission Layer of (TCTA/TCTA1/3TAZ2/3/TAZ) : Ir(ppy)3)

  • 장지근;신상배;신현관;김원기;유상욱;장호정;공명선;이준엽
    • 한국재료학회지
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    • 제18권7호
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    • pp.347-351
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    • 2008
  • We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.

Strain demand prediction method for buried X80 steel pipelines crossing oblique-reverse faults

  • Liu, Xiaoben;Zhang, Hong;Gu, Xiaoting;Chen, Yanfei;Xia, Mengying;Wu, Kai
    • Earthquakes and Structures
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    • 제12권3호
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    • pp.321-332
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    • 2017
  • The reverse fault is a dangerous geological hazard faced by buried steel pipelines. Permanent ground deformation along the fault trace will induce large compressive strain leading to buckling failure of the pipe. A hybrid pipe-shell element based numerical model programed by INP code supported by ABAQUS solver was proposed in this study to explore the strain performance of buried X80 steel pipeline under reverse fault displacement. Accuracy of the numerical model was validated by previous full scale experimental results. Based on this model, parametric analysis was conducted to study the effects of four main kinds of parameters, e.g., pipe parameters, fault parameters, load parameter and soil property parameters, on the strain demand. Based on 2340 peak strain results of various combinations of design parameters, a semi-empirical model for strain demand prediction of X80 pipeline at reverse fault crossings was proposed. In general, reverse faults encountered by pipelines are involved in 3D oblique reverse faults, which can be considered as a combination of reverse fault and strike-slip fault. So a compressive strain demand estimation procedure for X80 pipeline crossing oblique-reverse faults was proposed by combining the presented semi-empirical model and the previous one for compression strike-slip fault (Liu 2016). Accuracy and efficiency of this proposed method was validated by fifteen design cases faced by the Second West to East Gas pipeline. The proposed method can be directly applied to the strain based design of X80 steel pipeline crossing oblique-reverse faults, with much higher efficiency than common numerical models.

Single-Phase Improved Auxiliary Resonant Snubber Inverter that Reduces the Auxiliary Current and THD

  • Zhang, Hailin;Kou, Baoquan;Zhang, He;Zhang, Lu
    • Journal of Power Electronics
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    • 제16권6호
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    • pp.1991-2004
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    • 2016
  • An LC filter is required to reduce the output current ripple in the auxiliary resonant snubber inverter (ARSI) for high-performance applications. However, if the traditional control method is used in the ARSI with LC filter, then unnecessary current flows in the auxiliary circuit. In addressing this problem, a novel load-adaptive control that fully uses the filter inductor current ripple to realize the soft-switching of the main switches is proposed. Compared with the traditional control implemented in the ARSI with LC filter, the proposed control can reduce the required auxiliary current, contributing to higher efficiency and DC-link voltage utilization. In this study, the detailed circuit operation in the light load mode (LLM) and the heavy load mode (HLM) considering the inductor current ripple is described. The characteristics of the improved ARSI are expressed mathematically. A prototype with 200 kHz switching frequency, 80 V DC voltage, and 8 A maximum output current was developed to verify the effectiveness of the improved ARSI. The proposed ARSI was found to successfully operate in the LLM and HLM, achieving zero-voltage switching (ZVS) of the main switches and zero-current switching (ZCS) of the auxiliary switches from zero load to full load. The DC-link voltage utilization of the proposed control is 0.758, which is 0.022 higher than that of the traditional control. The peak efficiency is 91.75% at 8 A output current for the proposed control, higher than 89.73% for the traditional control. Meanwhile, the carrier harmonics is reduced from -44 dB to -66 dB through the addition of the LC filter.

Liver PET/MRI 검사 시 MR 기반 호흡 움직임 보정 방법의 유용성 평가 (Evaluation of MR Based Respiratory Motion Correction Technique in Liver PET/MRI Study)

  • 도용호;이홍재;김진의;노경운
    • 핵의학기술
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    • 제22권1호
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    • pp.15-22
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    • 2018
  • PET/MRI 검사 시 호흡에 의한 움직임은 영상의 질 저하는 물론 종양의 크기, 표준섭취계수의 오차를 발생시키는 원인이 된다. 본 연구에서는 일체형 PET/MRI 장비에서 MR기반 호흡 움직임 보정 방법의 적용에 따른 종양의 표준섭취계수, 크기와 영상 품질 변화를 평가하고자 하였다. Biograph mMR 3.0T (Siemens, Germany)장비에서 2016년 3월부터 7월까지 $^{18}F-FDG$ liver PET/MRI 검사를 시행한 30명 ($62.5{\pm}10.2$세)의 데이터를 분석하였다. 7분의 PET listmode 데이터를 획득하는 동안 MR 기반 호흡 움직임 보정 방법인 MAG, MTG와 NG T1 weighted MR 영상을 획득하였다. Gated PET 영상의 재구성은 35% efficiency window가 적용된 MAG와 MTG로부터 획득된 감쇄보정영상을 이용하여 시행하였다. Non-gate, MAG, MTG 영상에서 측정된 종양의 표준섭취계수와 Z축 방향의 크기 그리고 반치폭을 분석하였다 평균 $SUV_{max}$$SUV_{peak}$는 NG 대비 MAG 13.15%(P<0.0001), 8.66%(P<0.0001), MTG 13.27%(P<0.0001), 8.80%(P<0.0001) 증가하였으며 Z-축에서 평균 종양의 크기와 반치폭은 MAG 14.47%(P<0.0001), 15.49%(P=0.0004), MTG 14.89%(P<0.0001), 15.79%(P=0.0003) 감소하였으며 통계적으로 유의한 차이를 보였다. MAG와 MTG 비교 평가에서 MTG의 $SUV_{max}$$SUV_{peak}$는 MAG 대비 0.07%(P=0.8802), 0.13%(P=0.7766) 증가하였으며 Z-축에서 평균 종양의 크기와 반치폭은 0.49%(P=0.2786), 0.36%(P=0.2488) 감소하였다. 약 7분과 2분의 추가 검사시간이 필요한 MAG와 MTG에서 표준섭취계수와 종양의 크기, 반치폭에서 통계적으로 유의한 차이가 없었다. 간 PET/MRI 검사 시 MR 기반 호흡 움직임 보정 방법을 적용하였을 때 NG 대비 MAG, MTG 모두에서 표준섭취계수와 종양의 크기 및 공간분해능이 개선되었으며 MAG와 MTG의 결과 값은 통계적으로 유의한 차이가 없었다. 호흡에 의한 움직임에 영향을 받는 다양한 상 복부 검사에 MBRMCT를 적용 시 추가적인 장비의 설치 없이 약 2분의 추가 검사시간이 필요한 MTG 방법 적용하여 NG 대비 보다 정확한 정보를 제공할 수 있을 것으로 사료된다.

(TCTA/$TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$ 발광층을 이용한 녹색 인광소자 (Phosphorescent Organic Light Emitting Diodes using the Emission Layer of (TCTA/$TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$)

  • 장지근;신상배;신현관;김원기;유상욱;장호정;공명선;이준엽
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.33-35
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    • 2008
  • We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

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Highly transparent Pt ohmic contact to InGaN/GaN blue light-emitting diodes

  • Chul Huh;Kim, Hyun-Soo;Kim, Sang-Woo;Lee, Ji-Myon;Kim, Dong-Joon;Kim, Hyun-Min;Park, Seon-Ju
    • Journal of Korean Vacuum Science & Technology
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    • 제4권2호
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    • pp.47-49
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    • 2000
  • We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

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