• Title/Summary/Keyword: Fringing effect

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A Study on Characteristic Impedance and Electromagnetic Distribution by the Edge Effect of Printed Cicuit Board Line (PCB선로의 끝단효과에 의한 특성임피던스 및 전자계분포에 관한 연구)

  • 장인범;박건호;이수길;김성렬;김용주;김영천;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.323-325
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    • 1997
  • Conventionally it is asummed that the microstrip line conductor has a rectangular cross-section. but the additive and substactive processes used to create conductors for PCBs produce a conductor of approximately Trapezoidal cross-section. For wide Strip line, the thickness and edge effect will be small since most of capacitance is parallel plate rather than fringing and we can ignore the cross-section. For narrow strip lines, the edge effect become immportant. So in this paper, we measure the chracteristic impedance of microstripline by Vector Analyzer and simulate the electromagnetic field of microstripline using finite element method with edge angle.

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The Effect of Top-electrode Perimeter on the Tunability of Tunable Varactors Based on a BZN/BST/BZN Thin Film (BZN/BST/BZN 박막에 기초한 가변 바렉터의 상부전극 가장자리 길이에 대한 가변성 영향)

  • Lee, Young Chul;Lee, Baek Ju;Ko, Kyung Hyun
    • Journal of Advanced Navigation Technology
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    • v.17 no.6
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    • pp.720-725
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    • 2013
  • This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

Characteristic Analysis of a Magnet for Magnetically Levitated Vehicle using FLUX3D (FLUX3D를 이용한 자기부상용 전자석의 특성 해석)

  • Lee, Jae-Kun;Shin, Pan-Seok
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.127-129
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    • 1996
  • A 3-dimensional analysis is desired for a magnet of magnetically levitated vehicle because the geometrical shape of the magnet is complicated and nonsymmetric. A FEM package of FLUX3D is used to analyze the characteristic of the magnet. Various quantities could be observed like levitation force, flux density distribution along the air gap, edge and fringing effect, leakage flux pattern, etc. The simulation results from FLUX3D are compared with those of 2-D analysis and test results. There are a little difference between results due to the boundary conditions and magnetized B-H curve of the core.

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Design of Multi-stack Axial Flux Permanent Magnet Synchronous Generator Considering Electromagnetic and Mechanical Characteristics (전자기 및 기계적 특성을 고려한 다중 적층형 AFPMSG의 설계)

  • Syed, Qurban Ali Shah;You, Young-Min;Kwon, Byung-Il
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1043-1044
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    • 2011
  • This paper discusses the electromagnetic and mechanical design considerations to improve the design accuracy and power to mass ratio of multi-stack axial flux permanent magnet synchronous generator (AFPMSG). Design accuracy of multi-stack AFPMSG for direct drive wind turbine application is improved by considering magnetic flux leakages and fringing effect. FEM structural analysis is utilized to increase power to mass ratio of three-stack AFPMSG by reducing the rotor yoke thickness considering magnetic and centrifugal forces and Von Mises stress distribution.

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Near electromagnetic field analysis of HTS microstrip patch antenna (고온초전도 마이크로스트립 패치 안테나의 근거리 전자장 해석)

  • 정동철;허원일;김민기;한태희;한병성
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.783-788
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    • 1996
  • In this paper, the high-$T_c$ , superconductor (HTS) microstrip patch antenna which is directly coupled to a microstrip transmission line is designed and the numerical solution which evaluate near electromagnetic field of HTS antenna is presented. This solution uses the interpolation function with the vector edge triangular element. The advantage of this element is the elimination of spurious solutions attributed to the lack of enforcement of the divergence condition. The results of this method have a good agreement with $TM_10$ mode in HTS microstrip patch antenna and show that the computation of resonant length considering the fringing capacitance effect at radiating edge are proper.

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On Improving Resolution of Time-Frequency Representation of Speech Signals Based on Frequency Modulation Type Kernel (FM변조된 형태의 Kernel을 사용한 음성신호의 시간-주파수 표현 해상도 향상에 관한 연구)

  • Lee, He-Young;Choi, Seung-Ho
    • Speech Sciences
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    • v.12 no.4
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    • pp.17-29
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    • 2005
  • Time-frequency representation reveals some useful information about instantaneous frequency, instantaneous bandwidth and boundary of each AM-FM component of a speech signal. In many cases, the instantaneous frequency of each component is not constant. The variability of instantaneous frequency causes degradation of resolution in time-frequency representation. This paper presents a method of adaptively adjusting the transform kernel for preventing degradation of resolution due to time-varying instantaneous frequency. The transform kernel is the form of frequency modulated function. The modulation function in the transform kernel is determined by the estimate of instantaneous frequency which is approximated by first order polynomial at each time instance. Also, the window function is modulated by the estimated instantaneous. frequency for mitigation of fringing. effect. In the proposed method, not only the transform kernel but also the shape and the length of. the window function are adaptively adjusted by the instantaneous frequency of a speech signal.

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A Study on the Evaluation Method of Shielding Effectiveness using NFS in Near-Field Tests (근거리장에서 NFS를 사용한 차폐효율 평가방법에 관한 연구)

  • Park, Jungyeol;Song, Inchae;Kim, Boo-Gyoun;Kim, Eun-Ha
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.8
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    • pp.76-82
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    • 2016
  • In this paper, we evaluated shielding effectiveness (SE) of carbon nanotube (CNT) film using near field scanning (NFS) in near field analysis. We adopted CNT film with deposit carbon density of 5% and thickness of 1mm for evaluation of shielding characteristic. Using a test coupon analogized to an actual IC package, we measured SE according to measuring position and SE according to distances between the CNT film and the test coupon. As a result, the measured SE in the near field varied with frequency. Especially, the measured electric field SE in the center of the test coupon is better than that of the measured edge point of the test coupon where it is affected by fringing effect. The results show that the measured SE in the near field is affected not only by frequency but also by measurement environment such as position and height of the probe and height of shielding film. In conclusion, we should choose proper methods for SE measurement considering interference distance in the electronic control system because there is little correlation between the proposed evaluation method in the near field and ASTM D 4935-10.

Effect of the Patch Length and Via Radius on the Radiation Characteristics of an Inductive Loaded Patch Antenna (패치의 길이와 비아의 반경이 Inductive Loaded Patch Antenna의 방사 특성에 미치는 영향)

  • Kwak, Eun-Hyuk;Yoon, Young-Min;Kim, Boo-Gyoun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.49 no.6
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    • pp.48-56
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    • 2012
  • Radiation characteristics of inductive loaded patch antennas (ILPAs) and conventional patch antennas using a half wavelength resonance mode for substrates with various dielectric constants are investigated. ILPAs have the good radiation characteristics such as high broadside gain and suppressed radiation along the horizontal plane compared to those of conventional patch antennas. We show that ILPAs with the appropriate patch length and via radius have the optimum radiation characteristics such as the highest broadside gain and the most suppressed horizontal radiation.

Size-dependent nonlinear pull-in instability of a bi-directional functionally graded microbeam

  • Rahim Vesal;Ahad Amiri
    • Steel and Composite Structures
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    • v.52 no.5
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    • pp.501-513
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    • 2024
  • Two-directional functionally graded materials (2D-FGMs) show extraordinary physical properties which makes them ideal candidates for designing smart micro-switches. Pull-in instability is one of the most critical challenges in the design of electrostatically-actuated microswitches. The present research aims to bridge the gap in the static pull-in instability analysis of microswitches composed of 2D-FGM. Euler-Bernoulli beam theory with geometrical nonlinearity effect (i.e. von-Karman nonlinearity) in conjunction with the modified couple stress theory (MCST) are employed for mathematical formulation. The micro-switch is subjected to electrostatic actuation with fringing field effect and Casimir force. Hamilton's principle is utilized to derive the governing equations of the system and corresponding boundary conditions. Due to the extreme nonlinear coupling of the governing equations and boundary conditions as well as the existence of terms with variable coefficients, it was difficult to solve the obtained equations analytically. Therefore, differential quadrature method (DQM) is hired to discretize the obtained nonlinear coupled equations and non-classical boundary conditions. The result is a system of nonlinear coupled algebraic equations, which are solved via Newton-Raphson method. A parametric study is then implemented for clamped-clamped and cantilever switches to explore the static pull-in response of the system. The influences of the FG indexes in two directions, length scale parameter, and initial gap are discussed in detail.

Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications

  • Yoon, Young Jun;Seo, Jae Hwa;Cho, Seongjae;Kwon, Hyuck-In;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.172-178
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    • 2016
  • In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.