• Journal of the Korean Society for Precision Engineering
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• v.23 no.9 s.186
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• pp.102-110
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• 2006

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source for enhanced precision surface-profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows unequal-path scanning interferometry, which is not feasible with white light. Second, the high spatial coherence of femtosecond pulse lasers enables large-sized optics to be tested in nonsymmetric configurations with relatively small-sized reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.204-207
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• 2005

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source fer enhanced precision surface profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows performing unequal-path scanning interferometry that is not feasible with white light. Second, high spatial coherence of femtosecond pulse lasers enables to test large size optics in non-symmetric configurations with relatively small size reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.3
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• pp.440-449
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• 1988

Small vibration displacements may be measured by optical interferometers, based on the Michelson method. The standard Michelson interferometer works well when the mirror displacements are relatively large compared to the optical wavelength. But it does not work for displacements less than approximately a quater of optical wavelength. Several multiple reflection laser interferometers, simply modified standard Michelson interferometer, have been developed to decrease the minimum detectable limits. Among these a relatively simple and easy multiple reflection system is used to measure the small vibration displacements. This multiple reflection system is constructed with a right angle prism and a convex lens. Therefore this system makes it possible to measure a vibration displacement of the small area on the vibrating structure. The fringe interpolation method and curve fitting method are used to determine accurately the small vibration displacements from the measured interference fringe patterns. Also computer simulation technique is used to check the accuracies of these method. According to the results of the computer simulation technique, the curve fitting method is more accurate than the fringe interpolation method. The optically measured results are in good agreement with those of the standard accelerometer with high accuracy and it is possible to measure the peak vibration displacement as small as 9.01nm using multiple reflection system and curve fitting method.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.328-333
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• 1998

Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.7
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• pp.702-708
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• 2013

The white-light scanning interferometer (WSI) is an effective optical measurement system for high-precision industries (e.g., flat-panel display and electronics packaging manufacturers) and semiconductor manufacturing industries. Its major disadvantages include a slow image-capturing speed for interferogram acquisition and a high computational cost for peak-detection on the acquired interferogram. Here, a WSI system is proposed for the semiconductor inspection process. The new imaging acquisition technique uses an 'on-the-fly' imaging system. During the vertical scanning motion of the WSI, interference fringe images are sequentially acquired at a series of pre-defined lens positions, without conventional stepwise motions. To reduce the calculation time, a parallel computing method is used to link multiple personal computers (PCs). Experiments were performed to evaluate the proposed high-speed WSI system.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.504-508
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• 2003

We present a new point-diffraction interferometer, which has been devised for the three-dimensional profile measurement of light scattering rough surfaces. The interferometer system has multiple sources of two-point-diffraction and a CCD camera composed of an array of two-dimensional photodetectors. Each diffraction source is an independent two-point-diffraction interferometer made of a pair of single-mode optical fibers, which are housed in a ceramic ferrule to emit two spherical wave fronts by means of diffraction at their free ends. The two spherical wave fronts then interfere with each other and subsequently generate a unique fringe pattern on the test surface. A He-Ne source provides coherent light to the two fibers through a 2${\times}$l optical coupler, and one of the fibers is elongated by use of a piezoelectric tube to produce phase shifting. The xyz coordinates of the target surface are determined by fitting the measured phase data into a global model of multilateration. Measurement has been performed for the warpage inspection of chip scale packages (CSPs) that are tape-mounted on ball grid arrays (BGAs) and backside profile of a silicon wafer in the middle of integrated-circuit fabrication process. When a diagonal profile is measured across the wafer, the maximum discrepancy turns out to be 5.6 ${\mu}{\textrm}{m}$ with a standard deviation of 1.5 ${\mu}{\textrm}{m}$.