• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.81-89
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• 1996

Quantum RF impedance of SIS (superconductor insulator superconductor) junction has been analyzed by using through on tucker's quantum mixer theory in the frequency range form 80 GHz to 120 GHz. The embedding impedance of waveguide-type mixer mount and its equivalent circuit have been evaluated. From these evaluated results, the impedance matching efficiency between mixer mount embedding impedance and mixer port impedance of upper-side band and IF which were determined by augmented admittance matrix with given backshort position has been discussed in detail. It is found that the mixer with fixed backshort mount ahs a impedance matching efficiency about 80% at each port of mixer within 85GHz to 115GHz, which implys a conversion los of mixer would be good enough to be operated such a wide band frequency range. Therefore, the theoretical evaluated results show that our method can be used ot design the mixer mount without any mechanical tuning elements such a backshort or an E-plane tunners for wide band operation.

• Journal of electromagnetic engineering and science
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• v.7 no.4
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• pp.154-160
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• 2007

A reconfigurable multi-band mixer for the SDR system is proposed. The proposed reconfigurable mixer is operated between $850\;MHz{\sim}2\;GHz$, which includes all commercial mobile communication service. Because the varactor diodes are used to select a specific frequency and to adjust the impedance characteristic of the selected frequency band, the proposed reconfigurable mixer can be achieved to similar performance across all of the tuning range. In addition, the designed reconfigurable mixer is applicable for the SDR system since it has a single signal path for the multi-band signals and wide band tuning range.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.4
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• pp.685-694
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• 2018

In this paper, we designed and fabricated the frequency mixer, which is the core parts of high frequency head in Ku-band tracking radar. To overcome the problem of single-ended and single-balanced resistive structure, we designed the fine-line structure with balanced mixer, to generate IF signal without distortion in L-band, after receiving the RF signal of the Ku-band. The prototype mixer showed a Noise Figure Max of 6.823dB, Gain of 4.1598~4.676dB and Band Pass of 61MHz in 5 Ku-band samples frequency.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.90-98
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• 1996

We have evaluated the theoretical conversion loss and noise temperature of mixer using the quantum mixer theory and the method to determine the embedding impedance of waveguide-type mixer mount. At fixed backshort position of the mixer, the calculated SSB mixer conversion loss and mixer noise temperature are 5 dB and 10K within frequency range form 85 GHz to 115 GHz, respectively. The SIS mixer has been developed by using through on the calculated rsutls to observe cosmic radio waves. SIS junction of mixer is Nb/Al-AlOx/Nb and it consists of four series array. Area of each of junction is about 2.5${\mu}m^{2}$. The average receiver noise temperature of manufactured receiver with this mixer is about 30 K(DSB). The receiver noise temperature is much lower than that of receiver with a mixer using mechanical tuning backshort.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.5
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• pp.827-834
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• 2020

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the microwave airborne radar. Unlike the basic mixer design method, the gate bias voltage, at which the third-harmonic component of the Local frequency (LO) is the maximum, is selected using a frequency multiplier theory to maximize the third-harmonic mixing component at the intermediate frequency (IF). The proposed harmonic mixer was designed and manufactured using a commercial GaAs MESFET device in a plastic package, and it was possible to improve the high conversion loss, circuit complexity, high cost, and manufacturing complexity of the existing microwave mixer. The harmonic mixer using the proposed design method has a -8 ~ -10 dB conversion loss by pumping 11.5 GHz LO with a +5 dBm level when operating from 33.0 GHz to 36.0 GHz and the 1-dB gain compression point (P1dB) of 0 dBm.

• International journal of advanced smart convergence
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• v.10 no.1
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• pp.12-23
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• 2021

This paper proposes a low power radio frequency receiver front-end where, in a single stage, single-balanced mixer and voltage-controlled oscillator are stacked on top of low noise amplifier and re-use the dc current to reduce the power consumption. In the proposed topology, the voltage-controlled oscillator itself plays the dual role of oscillator and mixer by exploiting a series inductor-capacitor network. Using a 65 nm complementary metal oxide semiconductor technology, the proposed radio frequency front-end is designed and simulated. Oscillating at around 2.4 GHz frequency band, the voltage-controlled oscillator of the proposed radio frequency front-end achieves the phase noise of -72 dBc/Hz, -93 dBc/Hz, and -113 dBc/Hz at 10KHz, 100KHz, and 1 MHz offset frequency, respectively. The simulated voltage conversion gain is about 25 dB. The double-side band noise figure is -14.2 dB, -8.8 dB, and -7.3 dB at 100 KHz, 1 MHz and 10 MHz offset. The radio frequency front-end consumes only 96 ㎼ dc power from a 1-V supply.

• Journal of IKEEE
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• v.16 no.2
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• pp.127-130
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• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.143-149
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• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.361-364
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• 2000

One of the problems using DCR(Direct Conversion Receiver) are DC offset, poor channel selectivity. APDP(Anti Parallel Diode Pair) can be good candidate for DCR frequency mixer due to its inherent End harmonic suppression. APDP shows good IP2 and DC suppression. This paper describe single APDP LO power characteristics, IP2, and receiver structure utilizing APDP frequency mixer