• JSTS:Journal of Semiconductor Technology and Science
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• 제2권1호
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• pp.41-48
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• 2002

This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

• 전기전자학회논문지
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• 제3권1호
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권4호
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• pp.534-542
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• 2017

This paper presents a fast locking technique for a fractional-N PLL frequency synthesizer. The technique directly measures $K_{VCO}$ on a chip, computes the VCO's target tuning voltage for a given target frequency, and directly sets the loop filter voltage to the target voltage before the PLL begins the normal closed-loop locking process. The closed-loop lock time is significantly minimized because the initial frequency of the VCO are put very close to the desired final target value. The proposed technique is realized and designed for a 4.3-5.3 GHz fractional-N synthesizer in 65 nm CMOS and successfully verified through extensive simulations. The lock time is less than $12.8{\mu}s$ over the entire tuning range. Simulation verifications demonstrate that the proposed method is very effective in reducing the synthesizer lock time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.890-893
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• 2003

In this paper, we have designed the fractional-N frequency synthesizer for bluetooth system using 0.35-um CMOS technology and 3.3-V single power supply. The designed synthesizer consist of phase-frequency detector (PFD), charge pump, loop filter, voltage controlled oscillator (VCO), frequency divider, and sigma-delta modulator. A dead zone free PFD is used and a modified charge pump having active cascode transistors is used. A Multi-modulus prescaler having CML D flip-flop is used and VCO having a tuning range from 746 MHz to 2.632 GHz at 3.3 V power supply is used. Total power dissipation is 32 mW and phase noise is -118 dBc/Hz at 1 MHz offset.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권4호
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• pp.267-273
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• 2007

A fractional-N frequency synthesizer supports quadruple bands and multiple standards for mobile broadcasting systems. A novel linearized coarse tuned VCO adopting a pseudo-exponential capacitor bank structure is proposed to cover the wide bandwidth of 65%. The proposed technique successfully reduces the variations of KVCO and per-code frequency step by 3.2 and 2.7 times, respectively. For the divider and prescaler circuits, TSPC (true single-phase clock) logic is extensively utilized for high speed operation, low power consumption, and small silicon area. Implemented in $0.18-{\mu}m$ CMOS, the PLL covers $154{\sim}303$ MHz (VHF-III), $462{\sim}911$ MHz (UHF), and $1441{\sim}1887$ MHz (L1, L2) with two VCO's while dissipating 23 mA from 1.8 V supply. The integrated phase noise is 0.598 and 0.812 degree for the integer-N and fractional-N modes, respectively, at 750 MHz output frequency. The in-band noise at 10 kHz offset is -96 dBc/Hz for the integer-N mode and degraded only by 3 dB for the fractional-N mode.

• 한국전자파학회논문지
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• 제28권12호
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• pp.941-947
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• 2017

본 논문에서는 $0.35{\mu}m$ CMOS 공정으로 FRS 대역 무전기용 반송파 신호를 쿼드러쳐(Quadrature) 형식으로 출력하는 Fractional-N 위상 고정루프(PLL) 주파수 합성기를 설계 및 제작하였다. 설계한 주파수 합성기의 주요 블록은 전압 제어 발진기(VCO), 전하 펌프(CP), 루프 필터(LF), 위상 주파수 검출기(PFD) 그리고 주파수 분주기이다. VCO는 우수한 위상잡음과 전력 특성을 얻을 수 있는 LC 공진 방식으로 설계했고, CP는 참조 주파수에 따라 펌핑 전류를 조절할 수 있도록 설계하였다. 주파수 분주기는 16분주의 전치 분주기와 3차 델타-시그마 모듈레이터($3^{rd}$ DSM) 방식의 Fractional-N 분주기로 설계하였다. LF는 외부의 3차 RC 루프 필터로 구성하였다. 측정결과, 주파수 합성기의 동작 주파수 영역은 최소 460 MHz에서 최대 510 MHz이고, 출력전력으로는 약 -3.86 dBm을 얻었다. 출력의 위상잡음은 100 Hz offset 주파수에서 -94.8 dBc/Hz이며 위상 루프 고착 시간은 약 $300{\mu}s$이다.

• 대한전자공학회논문지TC
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• 제42권7호
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• pp.35-40
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• 2005

본 논문에서는 900MHz 대역 중저속 무선 통신용 칩에 이용되는 3차 ${\Delta}{\sum}$ modulator를 사용한 Fractional-N PLL 주파수 합성기를 설계 및 제작하였다 우수한 위상노이즈 특성을 얻기 위해 노이즈 특성이 좋은LC VCO를 사용하였다. 그리고 고착시간을 줄이기 위해서 Charge Pump의 펌핑 전류를 주파수 천이 값에 따라 조절할 수 있도록 제작하였고 PFD의 참조 주파수를 3MHz까지 높였다. 또한 참조 주파수를 높이는 동시에 PLL의 최소 주파수 천이 간격을 10KHz까지 줄일 수 있도록 하기위하여 36/37 Fractional-N 분주기를 제작하였다. Fractional Spur를 줄이기 위해서 3차 ${\Delta}{\sum}$ modulator를 사용하였다. 그리고 VCO, Divider by 8 Prescaler, PFD, 및 Charge Pump는 0.25um CMOS공정으로 제작되었으며, 루프 필터는 외부 컴포넌트를 이용한 3차RC 필터로 제작되었다. 그리고 Fractional-N 분주기와 3차 ${\Delta}{\sum}$ modulator는 VHDL 코드로 작성되었으며 Xilinx Spartan2E을 사용한 FPGA 보드로 구현되었다. 측정결과 PLL의 출력 전력은 약 -11dBm이고, 위상노이즈는 100kHz offset 주파수에서 -77.75dBc/Hz이다. 최소 주파수 간격은 10kHz이고, 최대 주파수 천이는 10MHz이고, 최대 주파수 변이 조건에서 고착시간은 약 800us이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.519-520
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• 2006

In this paper, we propose a voltage-controlled ring oscillator (VCO) for a 900 MHz low-noise fractional-N frequency synthesizer. The VCO delay cell is based on an nMOS source-coupled pair with load elements [1] and a combined tail current sources which consist of a large and a small current source to control the integer and fractional behaviors, respectively. The Spectre simulation results of the scheme in a 0.18um CMOS process show the accurate control of the KVCO better than the conventional one.

• 전기학회논문지
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• 제57권5호
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• pp.889-895
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• 2008

In this paper a Fractional-N frequency synthesizer is designed for UHF RFID readers. It satisfies the ISO/IEC frequency band($860{\sim}960MHz$) and is also applicable to mobile RFID readers. A VCO is designed to operate at 1.8GHz band such that the LO pulling effect is minimized. The 900MHz differential I/Q LO signals are obtained by dividing the differential signal from an integrated 1.8GHz VCO. It is designed using a $0.18{\mu}m$ RF CMOS process. The measured results show that the designed circuit has a phase noise of -103dBc/Hz at 100KHz offset and consumes 9mA from a 1.8V supply. The channel switching time of $10{\mu}s$ over 5MHz transition have been achieved, and the chip size including PADs is $1.8{\times}0.99mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.179-192
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• 2008

A multiphase compensation method with mismatch linearization technique, is presented and demonstrated in a $\Sigma-\Delta$ fractional-N frequency synthesizer. An on-chip delay-locked loop (DLL) and a proposed delay line structure are constructed to provide multiphase compensation on $\Sigma-\Delta$ quantizetion noise. In the delay line structure, dynamic element matching (DEM) techniques are employed for mismatch linearization. The proposed $\Sigma-\Delta$ fractional-N frequency synthesizer is fabricated in a $0.18-{\mu}m$ CMOS technology with 2.14-GHz output frequency and 4-Hz resolution. The die size is 0.92 mm$\times$1.15 mm, and it consumes 27.2 mW. In-band phase noise of -82 dBc/Hz at 10 kHz offset and out-of-band phase noise of -103 dBc/Hz at 1 MHz offset are measured with a loop bandwidth of 200 kHz. The settling time is shorter than $25{\mu}s$.