• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.163-166
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• 2011

We describe modified Fowler-Nordheim (FN) field emission equation for the free-standing nanomembrane cathode, which has mechanical degrees of freedom. The derived FN equation agrees well with the experimental data. The free-standing nanomambrane cathode demonstrates its unique ability to detect large biomolecure ions.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.319-324
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• 1993

개끗한 텅스텐 결정면의 일함수와 산소 흡착에 의한 텅스텐 결정면(123), (310), (221)의 일함수의 변화를 장전자 방출법으로 측정하였다. 일함수는 Fowler Nordheim equation을 사용하여 계산하였으며 흡착율을 결정할 수 있는 간단한 방법을 제시하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.2011-2015
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• 2009

In an insulating dielectric liquid such as transformer oil, space charge injection and propagation were analyzed under the Fowler-Nordheim and Richardson-Dushman's thermal emission charge injection conditions for blade-plane electrodes stressed by a step voltage. The governing equations were composed of all five equations such as the Poisson's equation for electric fields, three continuity equations for electrons, negative, and positive ions, and energy balanced equation for temperature distributions. The governing equations for each carrier, the continuity equations, belong to the hyperbolic-type PDE of which the solution has a step change at the space charge front resulting in numerical instabilities. To decrease these instabilities, the governing equations were solved simultaneously by the Finite Element Method (FEM) employing the artificial diffusion scheme as a stabilization technique. Additionally, the terminal current was calculated by using the generalized energy method which is based on the Poynting's theorem, and represents more reliable and stable approach for evaluating discharge current. To verify the proposed method, the discharge phenomena were successfully applied to the blade~plane electrodes, where the radius of blade cap was $50{\mu}m$.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1494-1495
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• 2006

A complete finite element analysis method for discharge onset process, which is governed and coupled by charge transport equation and electric field equation, was presented. The charge transport equation of first order was transformed into a second-order one by utilizing the artificial diffusion scheme. The two second-order equations were analyzed by the finite element formulation which is well-developed for second-order ones. The Fowler-Nordheim injection boundary condition was adopted for charge transport equation. After verifying the numerical results by comparing to the analytic solutions using parallel plane electrodes with one carrier system, we extended the result to blade-plane electrodes in 2D xy geometry with three carriers system. Radius of the sharp tip was taken to be 50 ${\mu}m$. When this sharp geometry was solved by utilizing the space discretizing methods, the very sharp tip was found to cause a singularity in electric field and space charge distribution around the tip. To avoid these numerical difficulties in the FEM, finer meshes, a higher order shape function, and artificial diffusion scheme were employed.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.203-205
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• 1996

DLC(Diamond-Like Carbon) films were prepared by Inductively Coupled Plasma(ICP) CVD system. It was confirmed that the field emission characteristics are closely related to the richness of C-H bonding incorporated in the DLC. According to Fowler-Nordheim equation, it is thought that the ability of DLC to emit electron at relatively low voltage is due to the field enhancement caused by the nodules of ${\sim}100nm$ size on the surface of DLC. The electric field to start field emission was about $1.4{\times}10^9V/m$ in case of DLC film deposited at input power of 400W and substrate bias of -100V.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.300-304
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• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.663-667
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• 2003

The effects of paste materials on field emission properties in a carbon nanotube(CNT) cathode were investigated for high-efficient field emission displays. The major components in CNT paste for screen printing were a metallic Ag-paste, a dielectric glass-frit and CNT ink. The emission current from the cathode by an electron tunneling effect increased with an increase in the dielectric material fraction in the CNT paste, which is related to an increase of field enhancement factor in Fowler-Nordheim equation. The surface treatment used, after soft baking of the screen-printed CNT films, greatly affected the decrease in the turn-on field in CNT cathode and the uniformity of emission sites over the entire CNT film area.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.357-361
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• 2011

The terminal current in voltage driven systems is an essential role for characterizing the pattern of electric discharge such as corona, breakdown, etc. Until now, to evaluate this terminal current, Sato's equation has been widely used in areas of high voltage and plasma discharge. Basically Sato's equation was derived by using the energy balance equation and its final form described physical meaning explicitly. To give more general abilities in Sato's equation, we present a generalized approach by directly using the Poynting's theorem incorporating the finite element method. When the magnetic field effect or the time-dependent voltage source is considered, this generalized energy method can be easily applicable to those problems with any dielectric media such as gas, fluid, and solid. As an alternative approach, the integral Ohm's law resulting in small numerical errors has an ability to be applied to multi-port systems. To test the generalized energy method and integral Ohm's law, first, the results from two prosed methods were compared to those from Sato's approach and an analytic solution in parallel plane electrodes. After verification, the generalized method was applied to the tip-sphere electrodes for evaluating the terminal current with three carriers and the Fowler-Nordheim field emission condition. From these results, we concluded that the generalized energy method can be a consistent technique for evaluating the discharge current with various dielectric materials or large magnetic field.