• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.314-317
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.305-306
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• 2006

Ga-doped and Al-doped ZnO thin films were fabricated via a sol-gel technique and electrical and optical properties of the films were investigated. Film deposition was performed by spin coating at 4000 rpm for 30 s on $SiO_2$ glass substrate FE-SEM was used to obtain the surface morphology images and the film thickness Four-point probe and UV-VIS spectrophotometer were used to measure the sheet resistance and the optical transparency, respectively.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1478-1480
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• 2001

ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.336-336
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• 2010

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was $6.5{\times}10^{-4}$[$\Omega$-cm] and the average transmittance of over 80% was seen in the visible range.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.49-55
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• 1992

We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N$_2$ mixtures, varying deposition parameters such as N$_2$ partial pressure, substrate temperature, power, and total pressure. All the samples received the heat treatment at 45$0^{\circ}C$ for 30 min. The resulting films are characterized by mechanical stylus($\alpha$-step), x-ray diffraction(XRD), scanning electron microscopy(SEM), and four point probe method. The Tin film properties strongly depend on the deposition condition. The stoichiometry and Ti deposition rate are critically affected by nitrogen partial pressure, and the resistivity, in particular, is dependent on both the substrate temperature and sputtering power.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.129-136
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• 2001

The remaining life estimation for the aged components in power plants as well as chemical plants are very important beacuse mechanical properties of the components are degraded with time of service exposure in high temperature. Since it is difficult to take specimens from the operating components to evaluate mechanical properties of components, nondestructive techniques are needed to estimate the degradation. In this study, test materials with 4 different degradation levels were prepared by isothermal aging heat treatment at $630^{\circ}C$. And the DC potential drop method and destructive methods such as tensile, $K_{IC}$ and hardness tests were used in order to evaluate the degradation of 1Cr-1Mo-0.25V steels. The objective of this study is to investigate the possibility of the application of DCPD method to estimate the material degradation, and to analyse the relationship between the electrical resistivity and the degree of material degradation.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.1
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• pp.9-18
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• 2003

An experimental study was performed to investigate the turbulence intermittency measuring methods across the boundary layer in the transition region. A single type hot-wire probe was used to measure instantaneous streamwise velocities in laminar, transitional and turbulent boundary layer To estimate wall shear stresses on the flat plate, near wall mean velocities are applied to the principle of CPM. Distribution of intermittency factor is obtained by dual-slope method and compared to the results of four methods,$\'{u},\;\{U}$, TERA and M-TERA method. In these methods, M-TERA shows a good agreement in the near wall region. However, the result of M-TERA method shows that intermittency factor is underestimated in the outer part and outside of the boundary layer and the dimensional constant of M-TERA method should be changed appropriately depending on measuring point.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.185-190
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• 2003

고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2050-2051
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• 2008

디스플레이 산업이 급속도로 발전함에 따라 touch screen 및 panel에 사용되고 있는 ITO(Indium Tin Oxide)박막의 표면저항에 대한 정밀 측정이 요구되고 있으며, 표면저항 측정은 주로 FPP(Four-Point Probe) 원리를 이용한 측정기를 사용하고 있다. 대부분의 면저항 측정기는 single 방식을 적용하고 있으나 이 방식은 가장자리 효과가 크며, 시료의 크기 및 두께와 핀 간격에 대한 보정계수를 적용하여야 하는 단점이 있다. 본 연구는 가장자리 효과가 거의 없고, 보정계수를 적용할 필요가 없는 dual 방식을 적용한 표면저항 측정기를 개발하였다. 개발된 표면저항 측정기는 휴대용으로 누구나 쉽고 정확하게 사용할 수 있으며, 측정 정확도는 지시값의 1.0 % 이하이고, 측정범위는 $4m{\Omega}/sq{\sim}20k{\Omega}/sq$ 이다.