• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.564-570
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• 2006

Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

• Journal of the Korean Chemical Society
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• v.58 no.5
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• pp.456-462
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• 2014

Binary-doped conducting chiral polyaniline (PAni) was synthesized by electrochemical polymerization of aniline at low-temperature ($0^{\circ}C$) and room-temperature (RT) conditions. (+)-Camphorsulfonic acid (CSA) and hydrochloric acid (HCl) were used as a binary dopant. Formation of the binary-doped PAni rather than a mixture of the corresponding single-doped PAni was confirmed by cyclic voltammogram, FT-IR and circular dichroism spectra. The temperature influenced the electrochemical behavior and doping level, thus determining the crystallinity and morphology of the PAni. However, among other results, morphology of the PAni is found to be most strongly depends on the polymerization temperature. With increased temperature from the initial state to RT, morphology of the PAni changed from fibrous to short-fibrous structure. The sheet resistance of the PAni films on an ITO was measured by using four-point probe dc method.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.17-22
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• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.191-197
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• 1991

The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1806-1808
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.8-12
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• 2005

Indium tin oxide(ITO) surface treated by Oxygen plasma has been in situ analyzed using XPS(X-ray Photoelectron Spectroscopy) and EDS(Energy Dispersive Spectroscopy), to investigate the relations between the properties of the ITO surface and the properties of OLED(Organic Light Emitting Diode). We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by AFM(Atomic Force Microscope). We fabricated OLED using substrate that was treated optimum ITO surface. The plasma treatment of the ITO surface lowered the operating voltage of the OLED. We have obtained an improvement of luminance and decrease of turn-on voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.120-120
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• 2009

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.590-597
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• 1991

Ion reflective index and sheet resistance in the silicon oblique range smaller than 8 degree and optimization of annealing temperature have been studied. A four point probe was used to obtain the sheet resistance after annealing, while high resolution SIMS was used to determine the Boron and Fluorine atomic profiles before and after annealing. Experimental results and theory of ion reflective index are compared. Ion reflective index was found to decrease according to increasing an ion oblique angle. We introduce a simple analytical model ion reflection, concidering the Rutherford scattering model. This result can not be explained by the conventional Gaussian model.