• Korean Journal of Materials Research
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• v.26 no.8
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• pp.401-405
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• 2016

The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that $Co_2Si$, CoSi, and $CoSi_2$ were formed successfully by annealing at $300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and $CoSi_2$ layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and $CoSi_2$ exhibit catalytic activities 67 % and 54 % that of Pt. Our results for $Co_2Si$, CoSi, and $CoSi_2$ revealed that CoSi and $CoSi_2$ could be employed as catalyst for a DSSC.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.105-109
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• 2007

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• Journal of Welding and Joining
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• v.27 no.2
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• pp.38-43
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• 2009

In this study, we investigated photocatalytic ability of plasma sprayed $TiO_2$ and Ag sputtering $TiO_2$(Ag-$TiO_2$) coatings. A sputtering processes were adopted to coat the surface of $TiO_2$ with Ag(99.99%). Ag was sputtered at 10mA, 450V for $1{\sim}11$ seconds. $TiO_2$ and Ag-$TiO_2$ coatings were heat-treated at 250, 300, 350, $400^{\circ}C$ for $0{\sim}240$seconds. Photoelectrical conductivity was measured by four-point probe, and photodegradation was calculated by UV-V is spectrometer. Microstructure observation of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by SEM. Crystal structure of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by XRD. Qualitative analyses of $TiO_2$ and Ag-$TiO_2$ coatings were conducted by EDX. When $TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 sec, photoelectrical conductivity and photodegradation were best. And in XRD analysis result, (101)/(110) relative intensity ratio of $TiO_2$(rutile) was comparably changed with photoelectrical conductivity. When Ag-$TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 [sec] after sputtering Ag for 7 sec, Photoelectrical conductivity and photodegradation are best. Surface of coatings in such condition has very small and uniform Ag particles.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.21-26
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• 2006

We developed a bonding at low temperature using fine pitch Sn and In bumps, and studied the reliability of the fine pitch In-Sn solder joints. The $30{\mu}m$ pitch Sn and In bumps were joined together at $120^{\circ}C$. A non conductive adhesive (NCA) was applied during solder joining. Thermal cycling test ($0^{\circ}C-100^{\circ}C$, 2 cycles/h) of up to 2000 cycles was carried out to evaluate the reliability of the solder joints. The bondability was evaluated by measuring the contact resistance (Rc) of the joints through the four point probe method. As the content of filler increased, the reliability improved in the solder joints during thermal cycling test because the contact resistance increased little. The filler redistributed the stress and strains from the thermal shock over the entire joint area.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1512-1515
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• 1996

Dense $SiC-ZrB_2$ electro-conductive ceramic composites were obtained by hot pressing for high temperature structural application. The influences of the $ZrB_2$ additions an the mechanical and electrical properties of $SiC-ZrB_2$ composites were investigated. Samples were prepared by adding 15, 30, 45 vol.% $ZrB_2$ particles as a second phase to a SiC matrix. Sintering of monolithic SiC and $SiC-ZrB_2$ composites were achieved by hot pressing under a $10^{-4}$ torr vacuum atmosphere from 1000 to $2000^{\circ}C$ with a pressure of 30 MPa and held for 60 minutes at $2000^{\circ}C$. SiC and $SiC-ZrB_2$ samples obtained by hot pressing were fully dense with the relative densities over 99%. Flexural strength and fracture toughness of the samples were improved with the $ZrB_2$ contents. In the case of SiC sample containing 30vol.% $ZrB_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to those of monolithic SiC sample. The electrical resistivities of $SiC-ZrB_2$ composites were measured utilizing the four-point probe method and they decreased significantly with Increasing $ZrB_2$ contents. The resistivity of SiC-30vol.% $ZrB_2$ showed $6.50{\times}10^{-4}{\Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.95-99
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• 2008

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. We investigated the electrolyte effects of the electroplating solution in the resistivity value of Cu films grown by electroplating deposition (EPD). The resistivity was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the electrolyte condition plays an Important role in formation of Cu film with lower resistivity by EPD.