• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2227-2236
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• 2017

In order to solve the neutral-point voltage fluctuation problem of three-phase three-level T-type inverters (TPTLTIs), the unbalance characteristics of capacitor voltages under different switching states and the mechanism of neutral-point voltage fluctuation are revealed. Based on the mathematical model of a TPTLTI, a feed-forward voltage balancing control strategy of DC-link capacitor voltages error is proposed. The strategy generates a DC bias voltage using a capacitor voltage loop with a proportional integral (PI) controller. The proposed strategy can suppress the neutral-point voltage fluctuation effectively and improve the quality of output currents. The correctness of the theoretical analysis is verified through simulations. An experimental prototype of a TPTLTI based on Digital Signal Processor (DSP) is built. The feasibility and effectiveness of the proposed strategy is verified through experiment. The results from simulations and experiment match very well.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.6
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• pp.25-30
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• 2013

In nanoscale MOSFET technology, aging effects such as Negative Bias Temperature Instability(NBTI), Hot carrier Injection(HCI), Time Dependent Dielectric Breakdown (TDDB) and so on which affect circuit reliability can lead to severe degradation of digital circuit performance. Therefore, this paper has proposed the adaptive compensation circuit to overcome the aging effects of digital circuits. The proposed circuit deploys a power gating structure with variable power switch width and variable forward body-biasing voltage in order to adaptively compensate for aging induced performance degradation, and has been designed in 45nm technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.5
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• pp.519-526
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• 1987

An adaptive estimation system which operates propoerly in the environments corrupted by additive impulse noise in addition to the white Gaussian noise has been proposed. A feed forward loop is inserted into the adaptive estimator proposed by R. L. Moose for a system with an unknown measurement bias by which the improved adaptive estimator is processed successfully without the sum of the time varying weights being zero even when the measurement system is added impulue noise. Successfully processed adaptive estimator has been obtained under the large impulse noise in addition to randomly varying unknown biases condition by giving sufficient large value to the elements of discrete vector on the computer simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Proceedings of the Korea Water Resources Association Conference
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• 2020.06a
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• pp.202-202
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• 2020

산지 및 도시에서 발생하는 돌발홍수가 대상인 예경보는 홍수 도달시간이 짧고, 수위가 급격하게 상승하는 특성 때문에 1시간 선행시간 확보를 목표로 한다(MOLIT, 2016). 그러나 현재 돌발홍수 예경보 process에 소요되는 시간은 그 이상으로 확인되고 있다. 또한, 돌발홍수 예경보시스템으로부터 출력된 예측 결과를 사람이 직접 확인해야 한다는 단점도 있다. 본 연구에서는 돌발홍수 예경보 선행시간 1시간 확보를 목표로 backward-forward tracking 기법 기반 예측강우 편의보정기법을 제안하고자 한다. 이 기법은 현재 시점보다 이전에 보정계수를 결정함으로써 돌발홍수 예경보 소요시간을 크게 줄여 돌발홍수 대피시간을 확보할 수 있게 한다. 또한, 보정계수의 결정과 적용이 연속적으로 이루어짐에 따라 10분 간격으로 생성되는 MAPLE의 지속적인 편의보정이 가능하다. 예측강우에 대한 보정계수는 현재보다 10분 이전에 결정한다. 즉, 10분 이전 시점에 생성된 10분, 70분 선행 예측강우에 backward tracking을 적용하여 현재 시점의 호우 위치인 target window를 찾는다. 그리고 target window에서 보정계수를 결정한다. 결정된 보정계수는 돌발홍수발령 대상지역인 correction window의 현재 생성된 60분 선행 예측강우에 적용한다. 이 과정에서 과거 시점 10분 선행 예측강우와 현재 시점에 생성된 60분 선행 예측강우와의 forward tracking이 수행된다. Storm tracking 기법으로는 두 예측강우의 호우패턴에 대한 유사성을 정량화한 패턴상관계수를 이용하였다. 대상 호우사상으로는 2016년에 발생한 주요 호우사상을 선정하였다. 본 연구에서 제안하는 기법을 적용하고, 편의보정 결과를 기존 편의보정기법 적용 결과와 비교하였다.

• Journal of Korea Trade
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• v.25 no.5
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• pp.39-57
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• 2021

Purpose - This research uses ocean marine insurance (OMI) statistics, international emails, focus-group interviews, and surveys to fill the gap between the theory of behavioral insurance, particularly status quo bias (SQB), and the practice of OMI in Korea. The contractual forms of OMI, the oldest and most globalized form of commercial insurance, were developed in the UK as the Institute Cargo Clauses in 1906 and revised in 1963, 1982, and 2009. SQB has been academically explored, mostly in health insurance and the financial services sector, but never in OMI. Thanks to the availability of OMI statistics in Korea, we can conduct SQB research here for the first time in this field. Design/methodology - We show the existence of SQB in the OMI of Korea through Korean statistics between 2009 and 2018, email correspondence with experts in the UK, Germany, and Japan, focus-group interviews with Korean OMI underwriters, an in-depth interview with one underwriter, and a survey of 15 OMI insureds (company representatives). Findings - We find that Korean foreign traders rely on the old-type OMI contracts developed in 1963, whereas other industrialized countries use the newest type of OMI contract developed in 2009. With a simple loss ratio analysis during 2009-2018, we show that the behavior of insurers has little to do with rational profit maximization and is instead driven by irrational bias, as they forgo the more profitable contracts provided by the new clauses by keeping the old clauses. The consistent addiction to old types of contracts in the OMI market suggests strong SQB among Korean exporters, importers, bankers, or insurers, which we confirmed in our interviews and survey. Originality/value - This research has significant originality and academic value because it reports new findings with crucial implications for the development of efficient trade practices and policy. First, this research is based on actual statistics that have not been used in previous Korean research on OMI. Second, this research shows that all-risk OMI policies provide more value to insureds, in terms of coverage given premium, than partial coverage policies, which differs from arguments previously made in Korea. Third, this research reveals strong SQB in Korea, where foreign trade plays a pivotal role in economic growth. That bias could be attributable to uninformed traders, informed but idle insurers, or conservative bankers. Fourth, to further develop foreign trade, policy initiatives are needed to review the current practices of OMI contracts and move forward with the new contract forms. All of these findings and arguments are both new and important.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.333-336
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• 2000

This paper describes a CMOS low noise amplifier (LNA) with bias current reusing architecture intended lot use in the front-end of IMT-2000 receiver. It has been implemented in a 0.35$\mu\textrm{m}$ CMOS process with two poly and four metal layers. In order to accuracy of simulation, we considered a bonding wire and a pad effect and used the measurements of capacitors and on-chip inductors which implemented in the same process. The LNA has a forward gain (S21) of 17 ㏈ and a noise fjgure of 1.26 ㏈. And it has a third-order intermodulation intercept point (IP3) of +3.15 ㏈m and a 1㏈ compression point (P1㏈) of -16 ㏈m, input referred, respectively. The power consumption is 19 ㎽ from a 3V supply.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.609-612
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• 1996

This paper describes a design and implementation of the practical SMPS(Switched Mode Power Supply) with multi-output independent regulation scheme. The designed SMPS is applied to the PSU(Power Supply Unit) of high power GTO drivers for a inverter system. In order to accomplish precise voltage regulations for both turn-on and turn-off bias voltages of the GTO driver, the conventional forward type PWM converter scheme is adopted with the Post Regulator using a Saturable Reactor. Analytic design criteria and control schemes are described for practical applications. Finally, the precise regulation of multi-output voltages is proved by experimental results.