• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.3
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• pp.1-9
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• 1973

Gallium phosphide light emitting diode (LED) has been fabricated first time for pilot lamp and numeric display purposes. Bright red light is obtained in forward bias at very low current of one to five mA. A typical p-n junction is formed by liquid phase epitaxial growth on a n-type gallium physphide substrate. The crystal growth is achieved at about 1300$^{\circ}$K after the equilibrium of the gallium solution followed by tipping operation. The ohmic contact is made by wire bonding by thermal compression technique. The entire process is well fit for laboratory scale to fabricate a few hundred diodes for mainly demonstration purpose. For mass production, a large sum of the capital investment is required. The great merit of gallium phosphide LED is at low current operation, and green light emission is also obtainable by nitrogen doping.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.489-492
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• 2007

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• Transactions of the Korean hydrogen and new energy society
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• v.3 no.2
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• pp.17-24
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• 1992

Hydrogen gas sensors were fabricated after the form of metal/insulator/semiconductor(MIS) structure on a p-type silicon wafer and a insulating layer (silicon dioxide) thickness was changed from $500{\AA}$ to $5000{\AA}$. Their electrical properties were investigated with the variation of the hydrogen gas concentration at room temperature. At the applied forward bias of lV to both ends of Pd-MIS sensors the current was decreased logarithmically with the increase of hydrogen concentration in air. In the case of a thin $SiO_2$ layered ($500{\AA}$) sensor the current ratio was decreased to 25 % at 1 % of hydrogen concentration in air and 50% for a thick $SiO_2$ layered ($5000{\AA}$) sensor. And the response time of the thick insulating layered sensor to 1% hydrogen containing air was about 50 seconds and regeneration time was 2.5 minutes. When a 0.5mA current was appied to the thick insulating layered sensor the maximun voltage shift was calculated to 0.8V in the case of ${\theta}$ = 1 and the Pd surface coverage of hydrogen was increased logarithmically with hydrogen partial pressure.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2038-2042
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• 2010

In this paper, we confirmed the thermal & optical properties for improving the heat transfer coefficient by changing the via hole size and in FR4 PCB with the same area. Osram 1W power LED Package (Golden Dragon) was used and the K-factor which is relative constant between LED junction temperature and forward bias was measured with power source meter(KEITHLEY 2430) to measure the thermal resistance from PCB configuration. As results, thermal resistance in metal PCB came out to the lowest as $26 [^{\circ}C/W]$ and thermal resistance in FR4 PCB without via-holes emerged as the highest as $69 [^{\circ}C/W]$. However thermal resistance of FR4 PCB could have decreased until $32[^{\circ}C/W]$ in 0.6 mm by using the via hole. Also, the luminous flux could have improved, too.

• International Journal of Computer Science & Network Security
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• v.22 no.2
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• pp.232-240
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• 2022

To fulfill user expectations, the rapid evolution of software techniques and approaches has necessitated reliable and flawless software operations. Aging prediction in the software under operation is becoming a basic and unavoidable requirement for ensuring the systems' availability, reliability, and operations. In this paper, an improved evolutionary computing-driven extreme learning scheme (ECD-ELM) has been suggested for object-oriented software aging prediction. To perform aging prediction, we employed a variety of metrics, including program size, McCube complexity metrics, Halstead metrics, runtime failure event metrics, and some unique aging-related metrics (ARM). In our suggested paradigm, extracting OOP software metrics is done after pre-processing, which includes outlier detection and normalization. This technique improved our proposed system's ability to deal with instances with unbalanced biases and metrics. Further, different dimensional reduction and feature selection algorithms such as principal component analysis (PCA), linear discriminant analysis (LDA), and T-Test analysis have been applied. We have suggested a single hidden layer multi-feed forward neural network (SL-MFNN) based ELM, where an adaptive genetic algorithm (AGA) has been applied to estimate the weight and bias parameters for ELM learning. Unlike the traditional neural networks model, the implementation of GA-based ELM with LDA feature selection has outperformed other aging prediction approaches in terms of prediction accuracy, precision, recall, and F-measure. The results affirm that the implementation of outlier detection, normalization of imbalanced metrics, LDA-based feature selection, and GA-based ELM can be the reliable solution for object-oriented software aging prediction.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.880-886
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• 2007

We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.16-21
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• 2007

In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.