• Journal of Radiation Industry
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• 제4권4호
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• pp.335-339
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• 2010

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.54-54
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• 2003

DLC films were deposited on Si(100) substrates by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD). A mixture of acetylene (C$_2$H$_2$) and argon (Ar) gases was used as the precursor and plasma source, respectively. The structure of the films was characterized by the Raman spectroscopy. Results from the Raman spectroscopy analysis indicated that the property change of the DLC films is due to the sp$^3$ and sp$^2$ ratio in the films under various conditions such as ICP power, working pressure and RF substrate bias. The hydrogen content in the DLC films was determined by an electron recoil detector (ERB). The roughness of the films was measured by atomic force microscope (Am). A microhardness tester was used for the hardness and elastic modulus measurement. The DLC film showed a maximum hardness of 37㎬. In this work, the relationship between deposition parameters and mechanical properties were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• International Journal of Highway Engineering
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• 제18권6호
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• pp.41-50
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• 2016

OBJECTIVES : In this study, microstructural components of crumb rubber modified asphalt (CRMA) binder were investigated using environmental scanning electron microscope (ESEM). To clearly understand the elemental composition of the CRMA binder, energy dispersive X-ray spectroscopy (EDX) was employed on the ESEM samples. METHODS : CRMA binders were produced using open blade mixers at $177^{\circ}C$ for 30 min. The binders were artificially aged through a series of accelerated aging processes. Sample preparation was done by making a mold shape on the glass slide. Thereafter, the morphology of the CRMA binder was observed using the ESEM coupled with the EDX. RESULTS : The images captured from the ESEM indicate that the unaged CRMA binder appears to have a single-phase continuous nonuniform structure after the addition of crumb rubber particles, whereas the artificially aged CRMA binder was observed to have two different phases. ESEM coupled with EDX shows detailed internal structure of the modified binders compared to other technologies (i.e., optical microscopy, atomic force microscopy, and conventional scanning electron microscope). CONCLUSIONS : The captured images resemble the internal structures such as the viscous properties of the unaged CRMA binder and the interaction between the rubber particles and the base binder at aged condition. ESEM is a powerful instrument and with the introduction of EDX, it provided more details of the network microstructure of the asphalt binder. ESEM coupled with EDX is recommended for use in future investigation of microstructure of asphalt binders.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.237.1-237.1
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• 2015

OLED의 낮은 외부 광자 효율 문제를 해결하기 위해서는 발광층은 물론 전극 재료에 대한 연구가 함께 진행되어야 한다. 최근 플렉서블 디스플레이(Flexible Display) 분야에서 투명전극(Transparent Electrode)은 큰 주목을 받고 있다. 기존 전자소자의 투명전극으로는 인듐산화물(ITO, Indium Tin Oxide)이 널리 사용되어 왔으나, ITO의 주원료인 인듐(Indium)은 희소성으로 인해 앞으로 30년 후에 고갈될 것으로 예상되어 ITO를 대체할만한 투명전극 재료가 필요하게 되었다. 인듐이 포함되지 않은(Indium-free) 투명전극을 개발하려는 많은 연구들이 진행 중인데, 본 연구에서는 PEN(Polyethylene Naphthalate) 유연기판 상에 그래핀(Graphene)을 투명전극으로 구현하여 OLED의 효율을 높이는데 이용하고자 하였다. 화학 기상 증착(CVD, Chemical Vapor Deposition) 방법을 이용하여 Cu 호일 위에 그래핀을 성장시킨 후 PEN 유연기판에 전사하여 그래핀 투명전극을 구현하면서 그래핀 성장층을 단층 또는 다층으로 구분하여 성장시켜 각각의 투명전극을 구현해보았다. 유연기판 상의 그래핀의 상태를 확인하기 위해 라만 분광(Raman Spectroscopy) 분석을 이용하여 그래핀 고유의 라만 꼭지점(Raman peak)인 G 꼭지점(G peak: 1580 cm-1), 2D 꼭지점(2D peak: ~2700 cm-1)을 확인하였는데 그래핀 전사 상태가 양호하여 D 꼭지점(D peak: ~1360 cm-1)은 나타나지 않았다. 원자힘 현미경(AFM, Atomic Force Microscope) 분석을 통해 다층 및 단층 그래핀 표면의 거칠기(Roughness) 및 두께(Thickness)를 각각 확인할 수 있었고 자외선-가시광선 분광법(UV-Visible Spectroscopy) 분석으로 그래핀 투명전극과 유연기판의 투과도(Transmittance)를 분석하였으며, 단층 그래핀 투과도가 90%수준의 높은 값이 나타나 ITO보다 개선됨을 확인하였다. 그래핀 면저항은 TLM(Transmission Line Measurement)법을 통해 측정하였는데, 단층 그래핀의 경우 $800{\Omega}/{\square}$ 내외 수준임을 확인할 수 있었다. 본 연구에서는 근자외선 영역에서 높은 투과도와 우수한 전기적 특성을 가지는 그래핀 투명 전도성 전극 구조를 제안하고, 나아가 가시영역에서 ITO를 대체할 수 있는 투명 전도성 전극 물질을 개발함으로써 발광다이오드의 광효율을 높일 수 있는 투명 전도성 전극을 구현하였다.

• Korean Journal of Metals and Materials
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• 제49권4호
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제51권4호
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• pp.175-183
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• 2002

In this paper, the surface modification effect of self-assembled monolayer(SAM) of 1-dodecanethiol [$CH_3$($CH_2$)$_{11}$SH] used as an anti-adhesive film in micromolding process was studied. Monolayers of 1-dodecanethiol[$CH_3$(CH$_2$)$_{11}$SH] were obtained by immersing a metal place in pure 1-dodecanethiol. SAM film on the nickel plate has been examined by using X-ray photoelectron spectroscopy(XPS). The focus has been placed on S-Ni bonding. From the XPS analysis, sulfur atoms were detected from the SAM film as a chemical composition of S-Ni. In order to measure an adhesion force of the SAM-coated nickel surface, atomic force microscopy(AFM) was used in force-distance mode, which whows the micro-adhesive force on solid surface. It was shown that adhesion forces measured from the SAM-coated nickel surface and the Ni surface without SAM coating were 3.52nN and 5.32nN, respectively. In order to investigate the effect of SAM coating on the surface foughness the replica in demolding process, hot embossing experiments were performed using a SAM-coated nickel master and a nickel master without SAM coating. Surface roughness of replica from the SAM-coated master showed 25nm and that of replica from master without SAM coating was 35nm. The smoother surface roughness of the replica from the SAM-coated, master is believed to result from reduction in the adhesion forces.ces.

• Journal of the Korean Magnetics Society
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• 제17권1호
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of the Korean Magnetics Society
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• 제13권2호
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• pp.64-69
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• 2003

Ba-ferrite thin films were prepared on Si substrate with ${\alpha}$-Fe$_2$O$_3$ underlayer by a pulsed laser deposition system and characterized by X-ray, SEM, Mossbauer spectroscopy and VSM. The appropriate conditions of pulsation in ${\alpha}$-Fe$_2$O$_3$ and Ba-ferrite were the oxygen pressure of 0.1 Torr at a substrate temperature of 400$^{\circ}C$. Ba-ferrite crystals had the forms of ellipsoidal or needle and the grains shaped the more lumps with increasing the film thickness. Mossbauer spectroscopy assured that the direction of atomic spin in Fe ion was not random but had the tendency of arrangement normal to the substrate. The coercive force and squareness of hysteresis were larger in normal than in plane to the substrate but, the magnetic saturation moment was contrary to them. The spin arrangement was strongly affected by ${\alpha}$-Fe$_2$O$_3$ underlayer and the high coercive force and squareness were influenced by this. The crystal structure was conformed to be a Magntoplumbite symmetry with the hexagonal unit cell and the lattice constant of a increased with increasing film thickness, while c decreased