• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• Journal of Biomedical Engineering Research
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• v.34 no.3
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• pp.123-128
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• 2013

The 'Dielectrophoretic Tweezers(DEP Tweezers)' can be used as a facile, economical toolkit for quantitative measurement of chemical and biological binding forces related to many biological interactions within a microfluidic device. Our experimental setup can probe the interaction between a single receptor molecule and its specific ligand. Immunoglobulin G(IgG) functionalized on polystyrene microspheres has been used to detect individual surface linked Staphylococcus protein A(SpA) molecules and to characterize the strength of the noncovalent IgG-SpA bond. It was measured and compared with the existing measurements. Measured single binding force of between Goat, Rabbit IgG and SpA were $17{\pm}7pN$, $74{\pm}16pN$. This work can be used to investigate several different ligand-receptor interactions and antigen-antibody interactions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.77-82
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• 2012

In this paper, the research of IC embedded PCB process is carried out. For embedding chips into PCB, solder-balls on chips were etched out and ABF(Ajinomoto Build-ip Film), prepreg and Cu foil was laminated on that to fabricate 6 layer build-up board. The chip of which solder ball was removed was successfully interconnected with PCB by laser drilling and Cu plating. However, de-lamination phenomenon occurred between chip surface and ABF during reflow and thermal shock. To solve this problem, de-smear and plasma treatment was applied to PI(polyimide) passivation layer on chip surface to improve the surface roughness. The properties of chip surface(PI) was investigated in terms of AFM(Atomic Force Micrometer), SEM and XPS (X-ray Photoelectron Spectroscopy). As results, nano-size anchor was evenly formed on PI surface when plasma treatment was combined with de-smear(NaOH+KMnO4) process and it improved thermal shock reliability ($260^{\circ}C$-10sec solder floating).

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.168-172
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• 2001

Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 $^{\circ}C$ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 nm and the grain size was about 40 nm for annealing temperatures over 600 $^{\circ}C$. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 $^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.361-367
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• 1998

$\alpha$-Sexithiophene ($\alpha$-6T) thin films were deposited by organic molecular beam deposition (OMBD) technique. The $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientation, crystallinity, and surface morphology of $\alpha$-6T films were investigated with angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). It was found that the crystalline structure of $\alpha$-6T films was monoclinic and independent uppon substrate temperature, deposition rate, and deposition pressure. On the other hand, the $\alpha$-6T molecules in the film deposited at a low deposition rate, higher substrate temperature, and under a high vacuum tended to be aligned perpendicular to the substrate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.95-99
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• 2008

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. We investigated the electrolyte effects of the electroplating solution in the resistivity value of Cu films grown by electroplating deposition (EPD). The resistivity was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the electrolyte condition plays an Important role in formation of Cu film with lower resistivity by EPD.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.386.2-386.2
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• 2014

본 연구에서는 바이오 센서 응용을 위해 그래핀을 전극으로 제작하여 그래핀 표면 결함준위에 따른 센서의 민감도를 전기화학 실험을 통해 관찰하였다. 그래핀은 니켈/구리촉매를 이용한 저 진공 화학 기상 증착 장비(Low-Pressure Chemical Vapor Deposition; LP-CVD)와 Photo-lithography로 제작한 것과 탄소 산화물을 환원시켜 만든 환원-그래핀, 두 가지를 사용하였다. 전기화학 실험에서 그래핀 전극 및 Silver/Silver chloride (Ag/AgCl), Fluorine doped Tin Oxide (FTO)은 작업 전극 및 기준 전극, 상대 전극으로 각각 사용하였고, 반응용액은 potassium hexacyanoferrate (III)를 농도를 다르게 하여 사용하였다. 그래핀의 표면 상태, 층수, 결함 정도 등 구조적인 특성은 원자력현미경(Atomic Force Microscopy; AFM), 주사 전자 현미경(Secondary Electron Microscopy; SEM)과 Raman spectroscopy를 각각 이용하여 확인하였고, 그래핀의 결함준위에 따른 반응면적 및 센서 감도 의존성을 전류모드-원자력현미경(Current-Atomic Force Microscopy; I-AFM)과 전기화학 임피던스 분광법(Electrochemical Impedance Spectroscopy; EIS)를 통해 그래핀 전극의 성능을 분석하고, 그래핀 결함 준위에 따른 센서 감도 의존성은 순환전위 분광법 (Cyclic Voltammetry; CV)를 이용하여 관찰하였다. 또한 농도가 다른 반응용액은 센서의 민감도를 관찰하는데 사용하였다. 결과적으로 LP-CVD로 성장한 그래핀과 환원-그래핀의 결함준위에 따른 센서의 성능을 비교 분석한 결과와 반응용액 농도에 따른 센서의 민감도 결과는 그래핀 바이오센서에 대한 응용 및 상용화를 앞당기는데 기여할 것으로 예상한다.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.878-882
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• 1999

Structural properties of $Al_xGa_1-_xN$ epilayers grown on (0001) sapphire substrate by plasma induced molecular beam epitaxy are investigated in the range of AlN molar fraction from 0.16 to 0.76. The AlN molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron microscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlGaN epilayers on AlN molar fraction imply that the epitaxial growth of $Al_xGa_1-_xN$ layers with variation of AlN molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of $Al_xGa_1-_xN$ epilayer changes from roundish to coalesced one with increasing AlN molar fraction.

• Polymer(Korea)
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• v.37 no.4
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• pp.431-436
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• 2013

Polycarbonate (PC) films have been irradiated with various kinds of ions according to energy and dose. Change of the optical transmittance and chemical characteristics were confirmed by UV-VIS and FTIR (ATR) spectroscopy respectively. These UV-A block in 400 nm was variable from 10 to 100% according to energy and doses. Surface electrical resistance of PC film irradiated by ion beam was $10^6-10^{13}{\Omega}/cm^2$, which reveal variation of conduction. Contact angle of film irradiated by ion beam was decreased than the pristine film. Polymer surface morphology was examined by means of atomic force microscopy (AFM). As expected, degradation of polymer film was higher after irradiation with heavier Xe ions but the roughness in the polymer surface morphology were more pronounced for Ar ions. This observed effect can be explained by stronger compaction of polymer surface layer in the case of Xe irradiation, connected with a reduction of free volume available.