• Journal of the Korean Society of Clothing and Textiles
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• v.12 no.3 s.28
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• pp.383-390
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• 1988

To investigate the soil-redeposition and color change on dry-cleaning, the white and, dyed, fabrics of cotton, silk, polyester and viscose rayon were put into ordinary commercial dry-cleaning machine with soiled cloths. The solvents used were hydrocarben, perchloroethylene and fluorocarbon. From the result, we obtained the following conclusions by examining soil-redeposition, color difference of fabrics and tenacity of cotton fabric. 1. In case of white fabrics, as a whole, perchloroethylene shows the lowest soil redeposition. When distillation process is adopted, the rate of soil redeposition is lowered. with hydrocarbon sdvent. The order of soil redeposition rate of fibers are following; cotton> viscose rayon> silk> polyester. 2. In case of dyed fabrics, the color difference between soil redeposited fabrics and originals ($\delta\;E_1$) is similar with white fabrics in pattern, and the order is cotton, viscose rayon, silk and polyester. The color difference between fabrics, treated by pure solvents and originals ($\delta\;E_2$ ) is also validated as a little. It seems to be due to the bleeding of dyestuffs from fabrics. 3. There is a little change of tenacity of cotton fabrics by dry-cleaning with perchloroethylene solvent. It is supposed that the damage is more influenced the repetitive mechanical action during dry-cleaning than by acidity of the solvent having the acid value of 0,14.

• Journal of the Korean Vacuum Society
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• v.4 no.4
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• pp.417-424
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• 1995

전자 회전 공명 플라즈마 발생 장치에서 CF4를 방전시켰을 때 각종 플루오로카본 래디칼의 절대적, 상대적 밀도 변화를 수소 철가율, 동작 압력 그리고 축방향에 따라 appearace mass spectrometry(AMS)를 통해 조사하였으며, 플루오린 원자의 상대적 밀도 변화가 actinometry법에 의해 조사되었다. 수소첨가에 따른 CF2 래디칼의 거동을 actinometry와 AMS로 살펴보았을 때 서로 일치하는 경향을 얻었으며 마이크로웨이브전력 500W, 압력 7.5mTorr에서 CF3와 CF2 래디칼의 밀도가 CF에 비해 높았으며 각각 2X1013/㎤, 1X1013/㎤의 값을 가졌다. 수소를 첨가함에 따라 플루오린 원자와 CF3의 밀도는 감소하는 반면 CF2와 CF의 밀도는 현저히 증가하여 수소가 40% 첨가된 경우 CF2의 밀도가 CF3보다 커짐을 확인하였다. 또한, CF2가 증가하면서 C2F4의 존재가 확인되었으며, 수소가 30% 첨가된 경우 축방향을 따라 C2F4래디캄만이 증가하였고 플루오린 원자는 감소하는 반면 다른 CFx(x=1~3)래디칼은 거의 변화가 없었다. 이러한 실험 결과를 토대로 CF4+H2 플라즈마를 이용한 산화막 식각 특성이 설명되었다.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1073-1077
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• 2003

This study aims to investigate the fabrication process of nano silicon mold using electron beam lithography (EBL) to generate the nanometer level patterns by nano-imprinting technology. the nano-patterned mold including 100mm pattern size has been fabricated by EBL with different doses ranged from 22 to 38 ${\mu}C/cm^2$ on silicon using the conventional polymethylmetharcylate(PMMA) resist. The silicon mold is fabricated with various patterns such as circles, rectangles, crosses, oblique lines and mixed forms, The effect of dosage on pattern density in EBL is discussed based on SEM (Scannning Electron Microscopy) analysis of fabricated molds. The mold surface is modified by hydrophobic fluorocarbon (FC) thin films to avoid the stiction during nano-imprinting process.

• Journal of the Korean Society of Clothing and Textiles
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• v.25 no.1
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• pp.154-161
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• 2001

We have treated polyester fabric with $CF_4,\;C_2F_6,\;SF_6\;and\;C_3F_6$ glow discharge plasmas to develop functional fabrics which preserve moisture transportation and water proofing nature. Modified properties were evaluated by water vapor permeation rate and breakthrough water pressure. The change of surface morphology was observed by SEM. Fiber interstice of the plasma treated fabric was calculated as $0.32{\mu}{\textrm}{m}$, and this value was sufficiently ideal as water repellent material. The moisture transportation of ${CF_4}-treated$ fabric was good as much as untreated fabric, and those of $C_2$F(sub)6-treated, SF(sub)6-treated fabrics were reduced by 1~3%, and that of ${C_3F_6}-treated$ fabric was reduced by 15%. The best treatment condition were 0.06 torr 120 seconds in $CF_4$, 0.05 torr 30 seconds in $SF_6$, 0.08~0.15 torr 90 seconds in $SF_6$ and 0.1 torr 45 seconds in $C_3F_6$ respectively. The grade of moisture transportation effect was $CF_4>C_2F_6>SF_6>>C_3F_6$, and water proofing effect was $C_2F_6{\approx}CF_4>C_3F_6>SF_6$. It was observed by SEM that the thin film was formed on the surface of the treated substrate by the fluorocarbon plasma treatment.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.575-579
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• 2002

Two-dimensionally cross-linked ultrathin films of poly(maleic acid-alt-methyl vinyl ether) (MA-MVE) and poly(allylamine) (PAA) were produced by using sodium dioctadecyl sulfate (2C18S) as the monolayer template for Langmuir-Blodgett (LB) depositio n. The template molecules were subsequently removed by thermal treatment followed by extraction. The polyion-complexed monolayers of three components, i.e., template 2C18S, co-spread PAA, and subphase MA-MVE, were formed at the air-water interface. Their monolayer properties were studied by the surface pressure-area isotherm. The monolayers were transferred on solid substrates as Y type. The polyion-complexed LB films and the resulting network films were characterized by FT-IR spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The cross-linking to form a polymer network was achieved by amide or imide formation through heat treatment under a vacuum. SEM observation of the film on a porous fluorocarbon membrane filter (pore diameter 0.1 ㎛) showed covering of the pores by four layers in the polyion complex state. Extraction by chloroform followed by heat treatment produced hole defects in the film.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1364-1366
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• 1994

In this paper, the monolayers of the polymers which polyion-complexed with PAA at the air-water interrace can be transferred on to solid substrates such as porous fluorocarbon membranes filter and quartz crystal microbalance. The properties of the monolayers and the LB films investigated by ${\pi}-A$ isotherms, FT-IR, DSC, deposition ratio, QCM, and SEM will be discussed. In addition, it was attempted to investigated the surface characterics of polymer/metal compound LB films in the air/water interface.

• Journal of Powder Materials
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• v.27 no.4
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• pp.293-299
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• 2020

W₂C is synthesized through a reaction-sintering process from an ultrafine-W and WC powder mixture using spark plasma sintering (SPS). The effect of various parameters, such as W:WC molar ratio, sintering temperature, and sintering time, on the synthesis behavior of W₂C is investigated through X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) analysis of the microstructure, and final sintered density. Further, the etching properties of a W₂C specimen are analyzed. A W₂C sintered specimen with a particle size of 2.0 ㎛ and a relative density over 98% could be obtained from a W-WC powder mixture with 55 mol%, after SPS at 1700℃ for 20 min under a pressure of 50 MPa. The sample etching rate is similar to that of SiC. Based on X-ray photoelectron spectroscopy (XPS) analysis, it is confirmed that fluorocarbon-based layers such as C-F and C-F2 with lower etch rates are also formed.