• 제목/요약/키워드: Fluorite structure

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대화(大華) 및 돈산(敦山) 중석(重石)·모리브덴 광상(鑛床)의 광석(鑛石)과 광물공생관계(鑛物共生關係) (Ore and Mineral Paragenesis of Daehwa and Donsan Tungsten-Molybdenum Deposits)

  • 박희인;최석원;김덕래
    • 자원환경지질
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    • 제18권1호
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    • pp.11-22
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    • 1985
  • The Daehwa and Donsan tungsten-molybdenum deposits are composed of numerous fissure-filling veins developed in Precambrian gneiss and Cretaceous granite and quartz porphyry. K-Ar age of biotite in granite and that of muscovite in ore veins are $105{\pm}5\;Ma$ and 88.2~88.6 Ma respectively. Occurrence of ore deposits shows that relevant igneous rock is possibly quartz porphyry rather than above mentioned granite in temporal view point. Vein structure and mineralogy suggest that ore veins were formed by continuous vein filling, not by repeated mineralization. Three distinct depositional stages with decreasing age can be devided on the basis of mineral paragenesis and fluid inclusion studies: Stage I, deposition of oxides and silicates; stage II, deposition of base-metal sulfides and sulfosalts with carbonates; stage III, deposition of barren calcite and fluorite. Tungsten, molybdenum and tin mineralization occurred in stage I.

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Facile Hydrothermal Synthesis and Characterization of the $CeO_2$ Nanorings

  • Arul, N. Sabari;Kim, Tae Whan;Mangalaraj, Devanesan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.455-455
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    • 2013
  • $CeO_2$ nanorings were synthesized by using a surfactant free hydrothermal method. The surface morphology, structural and optical properties of the synthesized $CeO_2$ was investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet-visible (UV) spectroscopy measurements. SEM images showed that the surface morphology of the formed $CeO_2$ appeared as nanorings. The XRD pattern of $CeO_2$ nanorings showed the presence of the polycrystalline $CeO_2$ phase readily indexed to the cubic fluorite structure of the $CeO_2$. The mean crystallite size of the $CeO_2$ was calculated using the Scherrer equation from the XRD line broadening of the (111) planes of the cubic $CeO_2$. The UV-Visible spectroscopy spectrum of the $CeO_2$ nanorings exhibited a strong UV absorption band around 350 nm.

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Absence of Distinctively High Grain-Boundary Impedance in Polycrystalline Cubic Bismuth Oxide

  • Jung, Hyun Joon;Chung, Sung-Yoon
    • 한국세라믹학회지
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    • 제54권5호
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    • pp.413-421
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    • 2017
  • In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

Oxygen Interstitial Defects and Ion Hopping Conduction of $X ThO_2 + (1-X) Gd_2O_3 $Solid Solutions: $O.O8{\le}X{\le}0.12$

  • Park, Sung-Ho;Kim, Yoo-Young;Kim, Keu-Hong
    • Bulletin of the Korean Chemical Society
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    • 제11권4호
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    • pp.339-342
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    • 1990
  • $Gd_2O_3-ThO_2$ solid solutions containing 8,10 and 12 mol % $ThO_2$ were synthesized with spectroscopically pure $Gd_2O_3,$ and $ThO_2$ polycrystalline powders. X-ray diffraction revealed that all synthesized specimens have the modified fluorite structure, and the lattice parameter of $Gd_2O_3$ is nearly unchanged with increasing $ThO_2$ mol %. Both ac and dc conductivities were measured in the temperature range $500-1100^{\circ}C$ under $Po_2's$ from $10^{-6}$ to $10^{-1}$ atm. The dc conductivities are nearly independent of $Po_2,$ and agree with the ac values. This implies that the solid solutions are ionic conductors. The conductivity increases with increasing $ThO_2$ mol % with an average activation energy of 1.23 eV. An oxygen interstitial defect and ionic hopping conduction are suggested.

Fabrication of YSZ/GDC Bilayer Electrolyte Thin Film for Solid Oxide Fuel Cells

  • Yang, Seon-Ho;Choi, Hyung-Wook
    • Transactions on Electrical and Electronic Materials
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    • 제15권4호
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    • pp.189-192
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    • 2014
  • Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

Order-disorder structural tailoring and its effects on the chemical stability of (Gd, Nd)2(Zr, Ce)2O7 pyrochlore ceramic for nuclear waste forms

  • Wang, Yan;Wang, Jin;Zhang, Xue;Li, Nan;Wang, Junxia;Liang, Xiaofeng
    • Nuclear Engineering and Technology
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    • 제54권7호
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    • pp.2427-2434
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    • 2022
  • Series of unequal quantity Nd/Ce co-doped ceramic nuclear waste forms, (Gd, Nd)2(Zr, Ce)2O7, were prepared to tailor its ordered pyrochlore or disordered fluorite structure. The phase transition, microtopography, and elemental composition of the ceramic samples were systematically investigated, especially the effect of order-disorder structure on the chemical stability. It was confirmed that unequal quantity of Nd/Ce could synchronously replace the Gd/Zr-sites of Gd2Zr2O7. And the phase transition of order-disorder structure could be successfully tailored by regulating the average cationic radius ratio of (Gd, Nd)2(Zr, Ce)2O7 series. The elements of Gd, Nd, Zr, and Ce are uniformly distributed in the ordered or disordered structures. The MCC-1 leaching results showed that (Gd, Nd)2(Zr, Ce)2O7 pyrochlore ceramic nuclear waste forms had excellent chemical stability, whose elements' normalized leaching rates were as low as 10-4-10-7 g·m-2·d-1 after 7 days. In particular, the chemical stability of disordered structure was superior to that of ordered structure. It was proposed that the force constant and the closest packing were changed with the structure transformation resulting the chemical stability difference.

CeO$_2$ 박막의 구조적, 전기적 특성 연구 (A Study on the Structure and Electrical Properties of CeO$_2$ Thin Film)

  • 최석원;김성훈;김성훈;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.469-472
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    • 1999
  • CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

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솔-젤법을 이용한 Bismuth Layered Structure를 가진 강유전성 박막의 제조 및 특성평가에 관한 연구 (The preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process)

  • 주진경;송석표;김병호
    • 한국세라믹학회지
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    • 제35권9호
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    • pp.945-952
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    • 1998
  • Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

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Oxygen Permeability, Electronic and ionic Conductivities and Defect Chemistry of Ceria-Zirconia-Calcia

  • Kawamura, Ken-ichi;Watanabe, Kensuke;Nigara, Yutaka;Kaimai, Atsushi;Kawada, Tatsuya;Mizusaki, Junichiro
    • The Korean Journal of Ceramics
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    • 제4권2호
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    • pp.146-150
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    • 1998
  • The total conductivity and oxygen permeation in (Ce1-xZrxO2)0.9(CaO)0.1 solid solutions were measure das a function of temperature and oxygen partial pressure. Empirically, σ at given x and T was expressed essentially by σ=σo2+σeo Po2-1/4, where σo2 and σeo are constant. Applying a standard defect model in which major defects are Cace", Cece' and Vo in ideal solution, we can assign σo2 as the oxide ion conductivity decreases while the electronic conductivity increases with the increase in Zr content. Using the oxide ion and electronic conductivities thus determined, the oxygen permeation flux was calculated for respective Po2 and T conditions at which the measurements were made. The calculated values were found to agree with the observed ones.

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메탄 부분산화반응 Ni/$CeO_2$ 촉매에 LA 첨가의 영향 (Effects of La addition to Ni/$CeO_2$ Methane Partial Oxidation Catalysts)

  • 천한진;신기석;안성환;윤철훈;함현식
    • 한국응용과학기술학회지
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    • 제27권1호
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    • pp.29-36
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    • 2010
  • The effects of La addition to Ni/$CeO_2$ methane partial oxidation catalysts were investigated. Catalysts were prepared by the impregnation and urea methods. In the preparation of catalysts, La content was changed from 1 wt% to 3wt%. Catalysts that contain 2wt% La showed the highest methane conversion of about 80% and CO selectivity of 84% and $H_2$ selectivity of 70%. This result may be stemmed from that, when La content is 2wt%, a fluorite oxide-type structure is well formed and carbon deposition is also decreased. Among the catalysts, 2.5wt% Ni/Ce(La)Ox showed the highest catalytic activity. From the experiment of changing reaction temperature with 2.5wt% Ni/Ce(La)Ox catalyst, it was found that the optimum reaction temperature is $750^{\circ}C$ and at this temperature methane conversion was about 90%, CO and $H_2$ selectivities were 94 and 80%, respectively.