• Journal of Korean Tunnelling and Underground Space Association
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• v.22 no.4
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• pp.347-365
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• 2020

In order to resolve traffic problems in urban areas and to increase the area of green spaces, tunnels in downtown areas are being increased. Additionally, the application of large port smoke extraction ventilation systems is increasing as a countermeasure to smoke extraction ventilation for tunnels with high potential for traffic congestion. It is known that the smoke extraction performance of the large port smoke extraction system is influenced not only by the amount of the extraction flow rate, but also by various factors such as the shape of the extraction port (damper) and the extraction air velocity through a damper. Therefore, in this study, the design standards and installation status of each country were investigated. When the extraction air flow rate was the same, the smoke extraction performance according to the size of the damper was numerically simulated in terms of smoke propagation distance, compared and evaluated, and the following results were obtained. As the cross-sectional area of the smoke damper increases, the extraction flow rate is concentrated in the damper close to the extraction fan, and the smoke extraction rate of the damper in downstream decreases, thereby increasing the smoke propagation distance on the downstream side. In order to prevent such a phenomenon, it is necessary to reduce the cross-sectional area of the smoke damper and increase the velocity of passing air through the damper so that the pressure loss passing through the damper increases, thereby reducing the non-uniformity of smoke extraction flow rate in the extraction section. In this analysis, it was found that when the interval distance of the extraction damper was 50 m, the air velocity passing through damper was 4.4 m/s or more, and when the interval distance of the extraction dampers was 100 m, the air velocity passing through damper was greater than 4.84 m/s, it was found to be advantageous to ensure smoke extraction performance.

• Journal of Biosystems Engineering
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• v.33 no.2
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• pp.106-114
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• 2008

This study was performed to analyze the distribution of air current speed, $CO_2$ concentration, and photosynthetic photon flux (PPF) in a closed transplants production system (CTPS) for producing quality transplants. And the effect of PPF on the growth of potato (Solanum tuberosum L. cv. Dejima) plug seedlings was analyzed. Uniformity of the air current speed in CTPS was improved by installing perforated floors in duct for air circulating and by adjusting of air flow rate of the fan connected to air conditioning unit used in this study, Measured $CO_2$ concentrations were measured $409{\pm}13$, $950{\pm}25$, and $1,550{\pm}35\;{\mu}mol{\cdot}mol^{-1}$ for setting values of 400, 950, and $1,550\;{\mu}mol{\cdot}mol^{-1}$, respectively. Uniformity of PPF by adding each one the single fluorescent lamp of 20 W at both ends of the single fluorescent lamps of 40 W was highly improved. While the average PPF measured under the twin fluorescent lamps of 55 W installed at regular intervals of 10 cm was decreased by increasing the vertical distance from the lighting sources, the ratio of average PPF measured at both ends to PPF measured in the center was 74-79%. Five levels ($100{\pm}9$, $150{\pm}14$, $200{\pm}17$, $250{\pm}24$ and $300{\pm}31{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) of PPF were provided to investigate the effect of PPF on plant height, fresh weight and dry weight of potato plug seedlings produced in CTPS. Plant height was decreased by increasing PPF. Maximum fresh weight and dry weight were shown under PPF of $250{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Thus PPF of $250\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ was enough to produce quality potato transplants under air temperature, photoperiod, and relative humidity of $20^{\circ}C$, 16/8 h, and 70%, respectively. It was concluded that quality indices such as plant height, fresh weight and dry weight could be improved by illuminating of adequate PPF from artificial lighting sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.642-647
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• 2007

We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.11
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• pp.1773-1785
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• 1997

The cooling stage is the very critical and most time consuming stage of the injection molding process, thus it cleary affects both the productivity and the part quality. Even through there are several commercialized package programs available in the injection molding industry to analyze the cooling performance of the injection molding coling stage, optimization of the cooling system has npt yet been accomplished in the literature due to the difficulty in the sensitivity analysis. However, it would be greatly desirable for the mold cooling system designers to have a computer aided design system for the cooling stage. With this in mind, the present study has successfully developed an interated computer aided design system for the injection molding cooling system. The CAD system utilizes the sensitivity analysis via a Boundary Element Method, which we recently developed, and the well-known CONMIN alforuthm as an optimization technique to minimize a weighted combination (objective function) of the temperature non-uniformity over the part surface and the cooling time related to the productivity with side constranits for the design reality. In the proposed objective function , the weighting parameter between the temperature non-uniiformity abd the cooling time can be adjusted according to user's interest. In this cooling system optimization, various design variable are considered as follows : (i) (design variables related to processing conditions) inlet coolant bulk temperature and volumetric flow rate of each cooling channel, and (ii) (design variables related to mold cooling system design) radius and location of each cooling channel. For this optimum design problem, three different radius and location of each cooling channel. For this optimum design problem, three different strategies are suffested based upon the nature of design variables. Three sample problems were successfully solved to demonstrated the efficiency and the usefulness of the CAD system.

• Journal of Biosystems Engineering
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• v.42 no.4
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• pp.258-264
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• 2017

Purpose: This study determines the spray characteristics and effective spray width of a tractor-mounted commercial boom sprayer through experiments. Methods: Performance tests were conducted to investigate the spray characteristics of the nozzles on a commercial boom sprayer. The flow rate and spray width of a single nozzle were measured at three levels of spray pressure (0.5, 0.7, and 1.0 MPa) and spray height (15, 30, and 45 cm), respectively. The average value of three repetition tests was used as the representative value. A coefficient of variation (CV) was used as an index of spray uniformity, and the width that guarantees CV values of approximately 15% was determined as the effective spray width. The spray characteristics of the overall boom sprayer were derived analytically by superimposing the spray characteristics of a single nozzle. Results: The test results for a single nozzle showed that the spray width tended to increase as the spray height and spray pressure increased. The effective spray width for a single nozzle was the largest at a spray pressure of 1.0 MPa and spray height of 45 cm, which resulted in a coverage of 84 cm of width. The effective spray width for the entire boom sprayer was also the largest at the spray pressure of 1.0 MPa and spray height of 45 cm, with a magnitude of 424.5 cm. The chemical spraying work in an actual field was simulated by applying a spray width of 400 cm. As a result of the operation for three swaths, the CV value was less than 10% for 1,200 cm of the overall spray width, which meant that uniform application was achieved. Conclusions: It was reasonable to set the effective spray width of the boom sprayer used in this study to 400 cm.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• Transactions of the Korean hydrogen and new energy society
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• v.6 no.2
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• pp.53-63
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• 1995

A 100kW class stack consisting of 10 molten carbonate fuel cells has been fabricated. Internally manifold stack has been tested for endurance. Each cell in the stack had an electrode area of $100cm^2$ and reactant gases were distributed in each cells in a cross-flow configuration. Initial and long term operation performance of the stack was investgated as a function of gas utilization using a specially designed small scale stack test facility. It was possible to have a stack with an output of more than 100W using an anode gas of 72% $H_2/18%$ $CO_2/10%H_2O$ and cathode gas of 33% $O_2/67%$ $CO_2$ and 70% Air 30% $CO_2$. The output and voltage of the stack at a current 15A($150mA/cm^2$) and gas utilization of 0.4 showed 125.8W and 8.39V respectively by elapsed time of 310 hours operation. In long term operation characteristics, the voltage drop of 52.4mV/1000hour was observed after more than 1,840 hours operation. Among the voltage drop, the OCV loss was highest than other voltage loss such as internal resistance and electrode polarization. Non uniformity of 2voltages and degradation of cell voltage in the stack was observed in according to changing the utilization rate after a long term operation. Further work for increasing the performance prolonging the life of the stack are required.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.37-42
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• 1999

In this paper, some of main processes for the next generation integrated circuits, such as Cu damascene process using CMP, electron beam lithography, $SiO_2$ CVD and RIE, Ti/Cu-CVD were carried cut and then, two level Cu interconnects were accomplished. In the results of CMP unit processes, a 4,635 ${\AA}$/min of removal rate, a selectivity of Cu : $SiO_2$ of 150:1, a uniformity of 4.0% are obtained under process conditions of a head pressure of 4 PSI, table and head speed of 25rpm, a oscillation distance of 40 mm, and a slurry flow rate of 40 ml/min. Also 0.18 ${\mu}m\;SiO_2$ via-line patterns are fabricated using 1000 ${\mu}C/cm^2$ dose, 6 minute and 30 second development time and 1 minute and 30 second etching time. And finally sub-0.2 ${\mu}$ twolevel metal interconnects using the developed processes were fabricated and the problems of multilevel interconnects are discussed.