• 전기전자학회논문지
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• 제19권4호
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• pp.491-499
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• 2015

Silicon Carbide(SiC)는 높은 열전도도와 넓은 밴드갭 에너지로 인해 고온과 고전압 소자로 사용하는데 큰 장점을 가지고 있는 물질이다. SiC를 이용하여 전력반도체소자를 제작할 경우, 소자가 목표 전압을 충분히 견딜 수 있도록 Edge Termination 기법을 적용하여야한다. Edge Termination 기법에는 여러 가지 방안이 제안되어왔는데, SiC 소자에 가장 적합한 기법은 Junction Termination Extension (JTE)이다. 본 논문에서는 각 JTE 구조별 도핑 농도와 Passivation Oxide Charge 변화에 따른 항복전압의 변화를 살펴보았다. 결과적으로 Single Zone JTE (SZ-JTE)는 1D 시뮬레이션 값의 98.24%, Double Zone JTE (DZ-JTE)는 99.02%, Multiple-Floating-Zone JTE (MFZ-JTE)는 98.98%, Space-Modulated JTE (SM-JTE)는 99.22%의 최대 항복전압을 나타내었고, JTE 도핑 농도 변화에 따른 최대 항복전압의 민감도는 MFZ-JTE가 가장 낮은 반면 SZ-JTE가 가장 높았다. 또한 Passivation Oxide 층의 전하로 인해 소자의 항복전압의 변화를 살펴보았는데, 이에 대한 민감도 역시 MFZ-JTE가 가장 낮았으며 SZ-JTE가 가장 높았다. 결과적으로 본 논문에서는, 짧은 JTE 길이에서 높은 도핑 농도를 필요로 하는 MFZ-JTE보다 DZ-JTE와 SM-JTE가 실제 소자 설계에 있어 가장 효과적인 JTE 기법으로 분석되었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.389-402
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• 1999

Single crystal of Li2Cu1-xMxO4 (M=Ni, Zn) are promising as a substrate to realize superconducting electronic devices. The distribution coefficients of Ni and Zn to the Cu site in La2CuO4 (LCO) were estimated by the zone melting technique to grow high quality single crystals of La2Cu1-xMxO4(M=Ni, Zn). The distribution coefficient value of Ni was estimated to be 4.2 and that of Zn was estimated to be 0.66, respectively. Suitable solvent compositions were determined using these values to grow single crystals by he traveling floating zone (TSFZ) method. Single crystal of LCO, La2Cu1-xMxO4(M=Ni(x=0.01, 0.02, 0.03, 0.04), Zn(x=0.01, 0.02, 0.03) of high homogeneity were grown. The behaviors of the magnetization of these as-grown crystals do not indicate superconductivity except LCO. Ni or Zn substitution can make LCO non superconductor. This fact suggest that single crystals substituted by Ni or Zn are useful as substrate crystals.

• 한국결정성장학회지
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• 제9권4호
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• pp.384-386
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• 1999

The distribution coefficients of Ni and Zn to the Cu site in $La_{2-x}Sr_{x}CuO_{4}$(LCO) were investigated to determine the suitable solvent composition ofr crystal growth of $La_{2}{Cu}_{1-x}{M}_{x}{O}_{4}$(M=NI, Zn)(LCMO), and were found to be 4.2 for NI and 0.66 for Zn, respectively. Single crystals of LCO, and LCMO of high homogeneity were grown by traveling solvent floating zone technique using suitable solvents. NO diamagnetic signals were observed for all substituted crystals. This fact suggests that crystals of LCO partially substituted by Ni or Zn are useful as substrate crystals.

• Progress in Superconductivity
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• 제4권1호
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.43-46
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• 1998

The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

• 한국철도학회논문집
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• 제15권1호
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• pp.48-61
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• 2012

열차 진동 저감을 위한 플로팅 슬래브궤도의 설계에 있어서 주행 안전, 승차감 및 사용성을 확보하는 것이 매우 중요하다. 본 연구에서는 플로팅 슬래브궤도에서 열차 주행안전과 승차감, 사용성 확보를 위한 요구조건을 분석하여 제시하였고, 열차-궤도 상호작용을 고려한 동적 해석기법을 적용하여 시스템 고유진동수, 스프링 지지간격 및 배치방법, 감쇠비 등 주요 시스템 설계변수에 따라 일반 콘크리트궤도와의 접속구간을 포함한 플로팅 슬래브궤도 구간에서의 열차 및 궤도의 동적 거동을 분석하였다. 연구결과에 따르면 일반 궤도와 플로팅슬래브궤도 간의 접속구간에서의 지지강성의 차이에 의해 윤중 변동율, 레일 응력, 레일 인상력 등의 동적 응답이 크게 증가하는 것으로 나타났으며, 따라서 접속구간에서 스프링 지지간격을 좁히거나 스프링 강성의 차이를 완화시키는 방안이 주행안전과 궤도 사용성 확보를 위해 효과적인 것으로 나타났다. 한편 차체 가속도로 평가하는 승차감은 접속구간에서의 지지강성의 차이에 의해서는 거의 영향을 받지 않고, 시스템 튜닝 주파수에 의해 가장 큰 영향을 받는 것으로 나타났으며, 승차감 확보를 위해서는 적절한 시스템 튜닝 주파수를 선정하는 것이 매우 중요한 것으로 나타났다. 이 밖에 감쇠비, 스프링 간격, 열차속도에 따른 영향을 분석하였다.

• 한국재료학회지
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• 제24권11호
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• pp.625-631
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• 2014

To investigate the deformation properties of TiC-(5-20) mol% Mo solid solution single crystals at high temperature by compression testing, single crystals of various compositions were grown by the radio frequency floating zone technique and were deformed by compression at temperature from 1250K to 2270K at strain rates from $5.1{\times}10^{-5}$ to $5.9{\times}10^{-3}/s$. The plastic flow property of solid solution single crystals was found to be clearly different among a three-temperature range (low, intermediate and high temperature ranges) whose boundaries were dependent on the strain rate. From the observed property, we conclude that the deformation in the low temperature range is controlled by the Peierls mechanism, in the intermediate temperature range by the dynamic strain aging and in the high temperature range by the solute atmosphere dragging mechanism. The work softening tends to become less evident with an increasing experimental temperature and with a decreasing strain rate. The temperature and strain rate dependence of the critical resolved shear stress is the strongest in the high temperature range. The curves are divided into three parts with different slopes by a transition temperature. The critical resolved shear stress (${\tau}_{0.2}$) at the high temperature range showed that Mo content dependence of ${\tau}_{0.2}$ with temperature and the dependence is very marked at lower temperature. In the higher temperature range, ${\tau}_{0.2}$ increases monotonously with an increasing Mo content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.