• Korean Journal of Crystallography
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• v.3 no.2
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• pp.72-84
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• 1992

The investigation has been carried out for purification, single crystal growth mechanism and convective phenomena in EBFZM of Nb metal. It is found that the EBFZM refined effectively oxygen and nitrogen, the interstitial impurities in Nb, but carbon was increased slightly by backstream of diffusion pump oil. The mechanism of single crystal growth associated with the second recrystallieation in Nb was suggested from the relationship between texture of starting materials and the crystal growth in EBFZM. It was observed from the investigation of convection phenomena in molten zone that the Marangoni convection was dominant in molten zone, which caused the striation in Nb and increased the purification effect of oxygen and nitrogen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.233-239
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• 1995

$La_{1/3}NbO_3$ and $La_{1/3}TaO_3$ large single crystal was prepared by the infrared floating zone method and their crystal structure and dielectric properties were investigated from the viewpoint of A - site vacancy. In $La_{1/3}TaO_3$ crystal, the crystal symmetry and approximate lattice constants was tetragonal and a $\approx$ 0.397, b $\approx$ 0.397 and c $\approx$ 0.775 from the nonextinction and the reciprocal lattice point length seen on Weissenberg and Precession photographs. The jump of some $2/3La^{3+}$ ions leads to increase the moving paths due to the generation of new vacancies at middle empty sites and thus this result is confirmed to provoke the dielectric anomaly.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.231-237
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• 2000

CMR Materials RE/sub 1-x/Ca/sub x/MnO₃(RE=La, Nd, A=Ca, Sr) were grown using the floating zone image furnace with halogen lamps as heat source. The growth condition was at 2∼10 mm/hr growth rate in air atmosphere, were 445∼50 rpm and 20∼25 rpm of rotation rate of feedrod and growing crystal, respectively. The grown crystals showed shiny black color and annealed at 1500℃ in a box furnace to release the residual stress during cooling. Characterization analyses of the crystal were carried out using XRD and SEM. The crystal structure of Nd/sub 0.7/Ca/sub 0.3/MnO₃ was analyzed with smart CCD XRD was lattice parameter of a=5.425(4)Å, b=5.434(4)Å, and c=7.712(5)Å, an orthorombic system with space group of pbnm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.240-249
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• 1995

Rutile type of $TiO_{2}$ single crystal was grown by floating zone method in order to obtain the highly transparent and contamination-free single crystal. The linear refractive index of perpendicular and parallel to c-axis was measured as a function o f wavelength from 500 to 1000nm. The optical energy band gap was estimated as 2.99 eV from the absorption spectrum. The theoretical $\chi^{(3)}$} value of $TiO_{2}$ was discussed in comparison with that of $SiO_{2}$ quartz single crystal on the basis of semiempirical model. On the other hand, the second-hyperpolarizability, ${\gamma}({Ti}^{4+})$ was calculated in order to describe the effect of $Ti_{4}$ ion on the third order nonlinear optical properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.215-222
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• 1995

Nb doped strontium titanate single crystals were grown by the floating zone method. The doping amount of $Nb_2O_5$ was 0.2 wt %. Those crystals were grown in air and N z atmosphere and the growth rate was 5 mmlhr and rotation speed of upper and lower shaft was 30 rpm. The shapes of melt - feed rod interface depending on sintering temperatures were observed. In air atmosphere, the flow rate of air was 1.5 ${\ell}/min$ and in $N_2$ atmosphere, that of $N_2$ gas was 0.5 ${\ell}/min$. As grown crystals were analyseQ by XRD, Laue back - reflection and chemical etching. After annealing in $N_2$ atmosphere, resistivities of crystals were measured and the activation energies of each samples were calculated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.30-35
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• 2000

A floating solidification technique is a process applied extensively to the production of glass plates. We used the technique for fabrication of Si plate. We used the proper liquid substrate material of 50 wt% $SiO_2$- 21 wt% $A1_2$$O_3$-29 wt% MnO, after studying ternary phase diagram of various oxides systems. The liquid substrate material has proper properties in the aspects of temperature, density and reactivity. But results showed some problems in fluidity and surface tension of the liquid substrate material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.318-331
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• 1995

The c - axis oriented single crystal of $LiNbO_3$ and $LiNbO_3$ : 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of $LiNbO_3$ with those of the other optical materials, the nonlinear optical refractive index ($n_2$) was calcu l lated using the measured refractive index.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.279-285
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• 2000

High quality crystals of $YMnO_3$, which is interested in non-volatile memory device application, were grown by the floating zone method. Optimum condition for powder synthesis was established to be $1200^{\circ}C$ for 10 hrs and optimum condition for sintering of $YMnO_3$feed-rod was established to be $1500^{\circ}C$ for 10hrs respectively. It was found from non-seeded growth experiment that $YMnO_3$crystal was grown preferentially to the [1010] orientation. The $YMnO_3$single crystal, which was grown to the direction of perpendicular to C-axis, was typically 5mm in diameter, 50 mm in length and showed dark-blue color.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.391-394
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• 2006

Growth characteristics of methane-propane clathrate hydrate, growing under different undercooling conditions, was investigated. After the water within pressurized vessel was fully saturated with guest gas molecules by agitation, medium was rapidly undercooled and maintained at the constant temperature. The growth of hydrate was always Initiated with film formations at the upper bounding surface of liquid pool. The visual observation using microscope revealed detailed features of subsequent crystal nucleation, migration, growth and interference occurring within liquid pool. A number of small crystals ascended and settled at the hydrate film. When undercooling was small $({\Delta}T=3.2K)$, some of the settled crystals slowly grew into faceted columns. As the undercooling increased, the downward growth of crystals underneath the hydrate film became dendritic and occurred with greater rate and with finer arm spacing. The shapes of the floating crystals were diverse and included octahedron and triangular or hexagonal platelet When the undercooling was small, the octahedral crystals were found dominant. As the undercooling increased, the shape of the floating crystals also became dendritic. The detailed characteristics of floating crystals were reported in this study.