• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.63-67
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• 2002

Langasite single crystal was grown by Xenon-arc floating zone method in mixutre of Af and $O_2$ gas atmosphere. Growing and rotation speed were 1.5 much and 15 rPm respectively. The grown crystal had a c-axis and color of orange. Composition of the grown crystal was $La_{3.10}Ga_{4.73}Si_{1.17}O_{14}$. Activation energy of the crystal was 0.23 eV and was PTC characteristics.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.547-552
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• 1999

Langasite$(La_{3}Ga_{5}SiO_{14})$ single crystal was successfully grown by Floating Zone (FZ) method and characterized. The growth rate was 1.5 mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. The grown crystal was 12 mm in length and 6 mm in diameter. The grown crystal was dark orange color and it was grown along [001] direction. The composition of grown crystal and the structure were analyzed using XRD and WDS. The electrical properties of grown crystal at various frequencies and temperatures were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.521-527
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• 1997

Ruby single crystals of 6-7 mm in dialneter and 20-25 mm in length were grown by the xenon-arc type floating zone method using a self-designed FZHY1, Calcination and sintering conditions were investigated and optimum growth conditions were established for controlling the factors such as growth rates, rotation speeds and cooling rates. Also the available energy levels of $Cr^{3+}$ were calculated from transmission data. The growth direction of the crystals was [1010] direction identified by Laue back reflection pattern. The distribution of refractive indices on the wafer of the grown crystals was homogeneous except for the edges of the wafer. The crystals could be used as a laser material with a wavelength of 693 nm and a metastate level.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.1050-1054
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• 1990

Rutile(TiO2) single crystals were grown by FZ method. Feed rod was sintered in the longitudinal tube-shaped furnace at 135$0^{\circ}C$ and optimum growth condition was growth rate 5-8mm/hr, rotation rate 30-40rpm. When crystal was growing, atomosphere was oxidized condition, and grown single crystal was annealed at 110$0^{\circ}C$. The rutile single crystals were oriented to [001] direction and color change of single crystals were related to atmosphere, and difference of electric conductivity and resistance was due to the fact above.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.121-128
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• 1996

The optimum conditons were experimentally established for the powder synthesis and sintering of the feed-rods for $LiNbO_3$ crystal growth by a floating zone method. At the lower synthesis temperatures(700, $ 800^{\circ}C$) the minor amounts of $Li_2CO_3$ and $Nb_2O_5$ were present in the synthesized $LiNbO_3$ powder and at the higher temperature the particle size increased which is not favorable for the sintering process for the feed-rods. $LiNbO_3$ powder synthesized at $950^{\circ}C$ for 12 hours was found to be the best because it contains only the$LiNbO_3$ phase with the small particle size and uniform particle size distribution. As the sintering temperature and the soaking time increase, the sintered feed-rods exhibited the higher sintered density and grain growth phenomena. The $LiNbO_3$ feed rods sintering at $1100^{\circ}C$ for 2 hours were found to have the best microstructure for the precursor feed-rods of the floating zone crystal growth because of their higher density, small grain size and uniform particle size distribution. As the sintering temperature and the soaking time increase, the sintered feed-rods exhibited the higher sintered density and grain growth phenomena. The $LiNbO_3$ feed rods sintering at $1100^{\circ}C$ for 2 hours were found to have the best microstructure for the precursor feed-rods of the floating zone crystal growth because of their density, small grain size and uniform grain size distribution.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.631-637
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• 1990

Lithium fluolide single crystals were grown by a floating zone method, with infrared radiation convergence type heater, which is free of contamination from the crucible wall. The crystals grown by this apparatus are 5cm in length and 5-6mm in diameter. The grown cryatal was examined by an optical microscope, XRD, Laue camera, Vickers hardness tester, and FTIR.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.85-97
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• 1992

EBFZM( Electron Beam Floating Zone Melting) 법을 이용하여 몰리브덴에서의 금속계 불순물과 침입형 불순물의 정련기구 및 단결정 성장기구를 연구하 였다. Fe, Cr, Co등의 금속계 불순물은 몰리브덴과의 평형증기압의 차이에 따른 불순물의 선택적 증발에 의하여 우수한 정련효과를 나타내며, 몰리브덴보다 응점이 높은 Ta, W는 잘 제거되지 않았다. 한편 대역 정제에 의한 정련효과는 미약함을 확인하였다. EBF ZM은 C,0,N등의 침입형 불순물의 정련에도 효과적 이었다. 본 연구의 모든 조건에서 몰리브덴은 단결정으로 성장하였으며 2차 재결정 epitaxy에 의한 단결 정 성장기구가 제시되었다. 몰리브덴 단결정 내의 전 위밀도는 strain-anneal법에 의한 단결정의 경우보다 높았으며,본 실험의 열처리 조건에서는 변화하지 않았다. The purification and single crystal growth mechanisms of molybdenum were analysed in EBFZM ( electron beam floating zone melting). Metallic impurities of Fe, Cr, Co were purified efficiently but Ta and W were not removed well in this study. It was due to a preferential evaporation of the elements caused by the difference in equillibrium vapor pressure between the elements and molybdenum. The pu- rification effect by zone refining was not significant. The EBFZM also refined the interstitial impurities of C, 0 and N, effectively. The single crystals of molybdenum were grown regardless of the experimental conditions and the secondary recrystallization epitaxy was surge sled as a growth mechanism. The dislocation density in single crystal was higher than that by strain-anneal method, and was not reduced by heat treatments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.250-260
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• 1995

In general, a sintered rod is used as a feed in the growth of crystals by the floating zone(FZ) method. The sintering condition of the feed rod affected the stability of molten zone because it influenced the interface shape between the feed and the melt during the crystal growth. In this study, rutile and ruby crystals were chosen as samples to analyze the effect of the microstructures of the feed rods. In sintering of the feed rod for the growth of rutile and ruby single crystals, the difference of grain size between the inner and the outer region of the feed rod increased with the sintering temperature and dwelling time. As a result, it altered melting behavior of the feed. The uniform grain size of the sintered rod was necessary for the optimum growing condition of crystals. The effect of pores in the feed rod was not a dominant factor to grow crystals by the FZ method, which was confirmed by growing crystals with nonsinterd rods as feeds.