• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1342-1344
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• 2000

This paper presents a microcontroller-based control circuit for color variation of high brightness RGB LEDs in $8{\times}8$ matrix array. The control circuit is comprised of an AT89C52 chip, D Flip-flops, and transistors for switching, and is used to adjust the number of LEDs operated for color variation. For a stable operation, it is required that the input current to each LED should be maintained to a normal value irrespective of the number of LEDs operated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.8-15
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• 2021

Micro-LEDs can be applied to various parts of a product. However, it has disadvantages compared to general LEDs in large displays such as low efficiency, intensity, and contrast ratio, among others, owing to their short history of study. The simulations were carried out using ray-tracing software to investigate the change in light intensity and light distribution according to pattern shapes on the sapphire substrate of the flip-chip micro-LED (FC μ-LED) array. Three patterns-concave square patterns, convex square patterns, and Ag coated convex patterns-which existed on the opposite side of FC μ-LEDs (115 ㎛ × 115 ㎛) array, were applied. The intensity of FC μ-LEDs on the center of the receivers depends on the pattern depth with shape. The concave square patterns having FC μ-LEDs arrays show that decreasing intensity as the patterns depth. On the contrary, the convex square patterns having FC μ-LEDs arrays shows that increasing intensity as the patterns depth. In addition, the highest intensity shows that FC μ-LEDs having Ag-coated convex patterns on the opposite side of sapphire lead to a reduction in light crosstalk owing to the Ag film.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.37-45
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• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.