• Journal of the Semiconductor & Display Technology
• /
• v.14 no.3
• /
• pp.13-22
• /
• 2015

LED (Light Emitting Diode) lighting is gaining more and more market penetration as one of the global warming countermeasures. LED is the next generation of fusion source composed of epi/chip/packaging of semiconductor process technology and optical/information/communication technology. LED has been applied to the existing industry areas, for example, automobiles, TVs, smartphones, laptops, refrigerators and street lamps. Therefore, LED makers have been striving to achieve the leading position in the global competition through development of core source technologies even before the promotion and adoption of LED technology as the next generation growth engine with eco-friendly characteristics. However, there has been a point of view on the cost compared to conventional lighting as a large obstacle to market penetration of LED. Therefore, companies are developing a Chip-Scale Packaging (CSP) LED technology to improve performance and reduce manufacturing costs. In this study, we perform patent analysis associated with Flip-Chip CSP LED and flow chart for promising technology forecasting. Based on our analysis, we select key patents and key patent players to derive the business strategy for the business success of Flip-Chip CSP PKG LED products.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.10
• /
• pp.676-681
• /
• 2015

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.

• Current Optics and Photonics
• /
• v.1 no.6
• /
• pp.626-630
• /
• 2017

GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.23 no.4
• /
• pp.355-360
• /
• 2014

Recently, the use of LED is increasing. This paper presents the new package process of thermal compression bonding using metal layered LED chip for the high power LED device. Effective thermal dissipation, which is required in the high power LED device, is achieved by eutectic/flip chip bonding method using metal bond layer on a LED chip. In this study, the process condition for the LED eutectic die bonder system is proposed by using the analysis program, and some experimental results are compared with those obtained using a DST (Die Shear Tester) to illustrate the reliability of the proposed process condition. The cause of bonding failures in the proposed process is also investigated experimentally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.4
• /
• pp.237-240
• /
• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.24 no.4
• /
• pp.448-454
• /
• 2015

In this paper, the band structural design that is typically in a line was arranged in a ring shape, so as to configure the high power LED lighting in such a way as to form a concentrated light distribution angle of less than 15 degrees. The parabolic aluminized reflector PAR38 that facilitates design using area and the area of the optical system to the same extent, applied a multiple light-source condenser lens optical system for the control of integration. The LED used here implemented a single linear light source using ans LED module with ans LED, flip-chip chip-scale package. The optical system was designed based on the energy star standard.

• Proceedings of the KWS Conference
• /
• 2005.06a
• /
• pp.19-21
• /
• 2005

The ball shea. tests for ball grid array (BGA) and flip chip packages were carried out with different displacement rates to find out the optimum condition of the displacement rate for this test. The BGA packages consisted of two different kinds of solder balls (eutectic Sn-37wt.%Pb and Sn-3.5wt.%Ag) and electroplated Au/Ni/Cu substrate, whereas the flip chip package consisted of electroplated Sn-37Pb solder and Cu UBM. The packages were reflowed up to 10 times, or aged at 443 K up to 21 days. The variation of the displacement rate resulted in the variations of the shear properties such as shear force, displacement rate at break, fracture mode and strain rate sensitivity. The increase in the displacement rate led to the increase of the shear force and brittleness of solder joints.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.1-6
• /
• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.1
• /
• pp.47-52
• /
• 2019

Micro-LEDs show lower efficiencies compared to general LEDs having large areas. Simulations were carried out using ray-tracing software to investigate the change in light extraction efficiency and light distribution according to chip-size of blue flip-chip micro-LEDs (FC ${\mu}-LEDs$). After fixing the height of the square FC ${\mu}-LED$ chip at $158{\mu}m$, the length of one side was varied, with dimensions of 2, 5, 10, 30, 50, 100, 300, and $500{\mu}m$. The highest light-extraction efficiency was obtained at $10{\mu}m$, beyond which the efficiency decreased as the chip-size increased. The chip size-dependence of the FC ${\mu}-LEDs$ both without the patterned sapphire substrate, as well as vertical FC ${\mu}-LEDs$, were analyzed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.23-23
• /
• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.