• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.119-128
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• 2022

Recent advancement of Internet of Things (IoT) and energy harvesting technology enable realization of flexible thermoelectric energy harvester (f-TEH), with technological prowess for use in biomedical monitoring system integrated applications. To expand a flexible thermoelectric energy harvesting platform, the f-TEH must be required for optimized flexible thermoelectric materials and device structure. In response to these demands related to thermoelectric energy harvesting, many research groups have investigated various f-TEHs applied as a power source for wearable electronics. As a key member of the f-TEH, film-based f-TEHs possess significant applicability in research to realize self-powered wearable electronics, owing to their excellent flexibility, low thermal conductivity, and convenient fabrication process. Thus, based on the rapid growth of thermoelectric film technology, this review aims to overview comprehensively the f-TEH made of various inorganic/organic thermoelectric materials including developed fabrication methods, high thermoelectric performance, and wide-range applications.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.366-370
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• 2019

In this study, we have successfully fabricated a highly conductive transparent electrode using Ag nanowires, based on piezoelectric polyvinylidene difluoride (PVDF) film, that can be applied as transparent and flexible speakers. The structural morphology of the Ag nanowires was confirmed by a detailed scanning electron microscopy. Ultraviolet-visible spectroscopy demonstrated that the transparent electrode fabricated by the Ag nanowires exhibited a transmittance of above 70%. The transparent electrode also showed very low sheet resistance with high flexibility. We have further developed an anti-oxidation coating layer by using a tetraethyl orthosilicate-poly trimethyloxyphenylsilane (TEOS-PTMS) slurry technique. It was confirmed that the transmittance and sheet resistance of the antioxidant film depends critically on the humidity of the film surface. We believe such Ag nanowire electrodes are a very promising next-generation transparent electrode technology that can be used in future flexible and transparent devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.1186-1190
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• 1995

This paper is focused on the formulation of explicit closed-form functions describing the performance measures of the general flexible manufacturing system (FMS)according to the strategy of material handling system(MHS). the performance measures such as the production rate, the production lead-time and the utilization rate of the general FMS are expressed, respectively, as the explicit closed-form functions of the part processing time, the service rate of the material handling system (MHS) and the number of machine tools in the FMS. For this, the gensral FMS is presented as a generalized stochastic Petri net model, then, the moment generating function (MGF) based approach is applied to obtain the steady-state probabity formulation. Based on the steady-state formulation, the explicit closed-form functions for performance measures of the probability FMS can be obtained. Finally, the analytical results are compared with the Petri net simulation results to verify the validity of the suggested method. The paper is of significance in the sense that it provides a comprehensive formula for performance measures of the FMS even to the industry engineers and academic reademic resuarchers who have no background on Markov chain analysis method or Petrinet modeling

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.17-17
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• 2009

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as promising materials for transparent conducting films (TCFs), thanks to their superior electrical conductivity, high mechanical strength, and complete flexibility. The CNT-based TCFs can be used in a variety of application fields as flexible, transparent electrodes, including touch panel screens, flexible electronics, transparent heaters, etc. First of all, this study investigated the effect of a variety of surfactants on the dispersion of SWCNTs in an aqueous solution. Following the optimization of the dispersion by surfactants, flexible TCFs were fabricated by spraying the CNT suspension onto poly(ethylene terephthalate) (PET) substrates. The sheet resistances of the TCFs having different surfactants were investigated with treatment in nitric acid ($HNO_3$) whose concentration and period of treatment time were varied. It seems that the $HNO_3$ removes the surfactants from and is simultaneously doped into the SWCNT network, reducing the contact resistance between CNTs. TCFs were characterized by UV-VIS spectroscopy, thermogravimetric analyzer (TGA), scanning electron microscopy (SEM), and four-point probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.254-254
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• 2009

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as promising materials for transparent conducting films (TCFs), thanks to their superior electrical conductivity, high mechanical strength, and complete flexibility. The CNT-based TCFs can be used in a variety of application fields as flexible, transparent electrodes, including touch panel screens, flexible electronics, transparent heaters, etc. First of all, this study investigated the effect of a variety of surfactants on the dispersion of SWCNTs in an aqueous solution. Following the optimization of the dispersion by surfactants, flexible TCFs were fabricated by spraying the CNT suspension onto poly(ethylene terephthalate) (PET) substrates. The sheet resistances of the TCFs having different surfactants were investigated with treatment in nitric acid ($HNO_3$) whose concentration and period of treatment time were varied. It seems that the $HNO_3$ removes the surfactants from and is simultaneously doped into the SWCNT network, reducing the contact resistance between CNTs. TCFs were characterized by UV-VIS spectroscopy, thermogravimetric analyzer (TGA), scanning electron microscopy (SEM), and four-point probe.

• Journal of the Korean Society of Propulsion Engineers
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• v.8 no.2
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• pp.25-31
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• 2004

This paper describes a new vibration-suppression technique for flexible cantilevered structures by using a pipe containing an internal flow. The stability and dynamic response are analyzed based on the finite element method. The flutter limit and optimum stabilizing fluid velocity are determined in root locus diagrams. The impulse responses of the system are studied by the mode superposition method to observe the damping rate of the motion. The stabilizing effect of an internal flow is demonstrated by impulse responses of the structures with and without an material damping. It is found that the response of the pipe with flow of liquid has a larger effect of, stabilizing than that with flow of gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.149-150
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• 2006

A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.26-26
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• 2010

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.